Yasuhide Yakushi | Researchain

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Archive | 2009

N-type group III nitride-based compound semiconductor and production method therefor

Seiji Nagai; Shiro Yamazaki; Yasuhide Yakushi; Takayuki Sato; Makoto Iwai; Katsuhiro Imai; Yusuke Mori; Yasuo Kitaoka

Archive | 2009

Method for producing Group III nitride-based compound semiconductor, wafer, and Group III nitride-based compound semiconductor device

Seiji Nagai; Shiro Yamazaki; Takayuki Sato; Yasuhide Yakushi; Koji Okuno; Koichi Goshonoo

Tetrahedron Letters | 2010

Transition metal-directed self-assembly of porphyrins bearing redox-active phenylenediamine pendant

Toru Amaya; Yasutomo Shimizu; Yasuhide Yakushi; Yumiko Nishina; Toshikazu Hirao

Archive | 2008

Method for producing group iii nitride compound semiconductor and gallium nitride self-supporting substrate

Koichi Goshonoo; Seiji Nagai; Koji Okuno; Shinyuki Sato; Takahiro Sonoyama; Yasuhide Yakushi; Shiro Yamazaki; 浩一五所野尾; 峻之佐藤; 貴広園山; 浩司奥野; 史郎山崎; 誠二永井; 康英薬師

Archive | 2014

Method for Etching a Group III Nitride Semiconductor, Method for Producing a Group III Nitride Semiconductor Crystal, and Method for Producing a GaN Substrate

Shohei Kumegawa; Yasuhide Yakushi; Seiji Nagai; Miki Moriyama

Archive | 2013

METHOD OF MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR CRYSTAL, AND METHOD OF MANUFACTURING GaN SUBSTRATE

尚平久米川; Shohei Kumegawa; 康英薬師; Yasuhide Yakushi; 永井誠二; Seiji Nagai; 誠二永井; 実希守山; Miki Moriyama

Archive | 2012

n-type Group III nitride-based compound semiconductor

Seiji Nagai; 誠二永井; Shiro Yamazaki; 史郎山崎; Yasuhide Yakushi; 康英薬師; Shinyuki Sato; 峻之佐藤; Makoto Iwai; 真岩井; Katsuhiro Imai; 克宏今井; Yusuke Mori; 勇介森; Yasuo Kitaoka; 康夫北岡

Archive | 2009