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Dive into the research topics where Yasuhiro Kunitsugu is active.

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Featured researches published by Yasuhiro Kunitsugu.


Laser Diodes and Applications | 1995

High-coupled-power 0.98-μm narrow-beam laser diodes

Etsuji Omura; Akihiro Shima; Akira Takemoto; Yasuhiro Kunitsugu; Motoharu Miyashita; Shouichi Karakida; T. Kamizato; Akihiro Adachi; Yasuaki Yoshida; Mutuyuki Otsubo

Kink-free, high coupled power of 148 mW into a single mode fiber has been realized by narrowing the vertical beam divergence in 0.98 micrometers laser diodes. It has been found that the high-refractive index GaAs layers have crucial influence on the far field patterns as well as lasing spectrum, since the GaAs is transparent to the emission wavelength of 0.98 micrometers .


Japanese Journal of Applied Physics | 2004

Suppression of Lasing Wavelength Change of 980 nm Pump Laser Diodes for Metro Applications

Kazushige Kawasaki; Kimio Shigihara; Hiromasu Matsuoka; Yasuhiro Kunitsugu; Shin'ichi Yamamura; Tetsuya Yagi; E. Omura; Yasuo Mitsui

High-power 980 nm laser diodes (LDs) are used as pumping sources of erbium-doped fiber amplifiers (EDFAs). Reductions of costs and power consumption in EDFAs are very important for access or metro applications. System construction without fiber Bragg gratings (FBGs) and thermal electric coolers (TECs) is strongly required. Therefore, high-power 980 nm LDs with small lasing wavelength changes under various operational conditions are highly desired in these systems. We proposed a new technique of wavelength change suppression using a facet coating for 980 nm LDs. Less than one-third reduction of lasing wavelength change was realized by this method. Moreover, the proposed LDs possess more than 350 mW output power even at 95°C and good reliability at 50°C with 700 mA automatic current control (ACC).


High-power lasers and applications | 1998

650-nm-band high-power and highly reliable laser diodes with a window-mirror structure

Akihiro Shima; Misao Hironaka; Kenichi Ono; Masayoshi Takemi; Yoshifumi Sakamoto; Yasuhiro Kunitsugu; Koji Yamashita

An active layer structure with 658 nm-emission at 25 degrees Celsius has been optimized in order to reduce the operating current of the laser diodes (LD) under high temperature condition. For improvement of the maximum output power and the reliability limited by mirror degradation, we have applied a zinc-diffused-type window-mirror structure which prevents the optical absorption at the mirror facet. As a result, the CW output power of 50 mW is obtained even at 80 degrees Celsius for a 650 micrometer-long window-mirror LD. In addition, the maximum light output power over 150 mW at 25 degrees Celsius has been realized without any optical mirror damage. In the aging tests, the LDs have been operating for over 2,500 - 5,000 hours under the CW condition of 30 - 50 mW at 60 degrees Celsius. The window-mirror structure also enables reliable 60 degree Celsius, 30 mW, CW operation of the LDs with 651 nm- emission at 25 degrees Celsius. Moreover, the maximum output power of around 100 mW even at 80 degrees Celsius and reliable 2,000-hour operation at 60 degrees Celsius, 70 mW have been realized for the first time by 659 nm LDs with a long cavity length of 900 micrometers.


Archive | 2013

BACK-SURFACE-INCIDENCE-TYPE SEMICONDUCTOR LIGHT RECEIVING ELEMENT

Hitoshi Tada; Yasuo Nakajima; Yasuhiro Kunitsugu


Archive | 2008

Semiconductor laser device including highly reflective coating film

Harumi Nishiguchi; Hiromasu Matsuoka; Yasuyuki Nakagawa; Yasuhiro Kunitsugu


Archive | 2013

Semiconductor light detecting element with grooved substrate

Hitoshi Tada; Yasuo Nakajima; Yasuhiro Kunitsugu


Archive | 2004

Semiconductor laser device with dielectric multi-layer film

Yasuhiro Kunitsugu; Hiromasu Matsuoka; Yasuyuki Nakagawa; Harumi Nishiguchi


Archive | 2004

Halbleiterlaservorrichtung A semiconductor laser device

Junichi Horie; Yasuhiro Kunitsugu; Hiromasu Matsuoka; Yasuyuki Nakagawa; Harumi Nishiguchi; Tetsuya Yagi


Archive | 2004

Semiconductor laser device having dielectric reflective film on optical exit face

Hiromasu Matsuoka; Yasuhiro Kunitsugu; Harumi Nishiguchi; Tetsuya Yagi; Yasuyuki Nakagawa; Junichi Horie


Archive | 2004

A semiconductor laser device

Junichi Horie; Yasuhiro Kunitsugu; Hiromasu Matsuoka; Yasuyuki Nakagawa; Harumi Nishiguchi; Tetsuya Yagi

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