Yasumasa Takeuchi

Solution-processed silicon films and transistors.

The use of solution processes—as opposed to conventional vacuum processes and vapour-phase deposition—for the fabrication of electronic devices has received considerable attention for a wide range of applications, with a view to reducing processing costs. In particular, the ability to print semiconductor devices using liquid-phase materials could prove essential for some envisaged applications, such as large-area flexible displays. Recent research in this area has largely been focused on organic semiconductors, some of which have mobilities comparable to that of amorphous silicon (a-Si); but issues of reliability remain. Solution processing of metal chalcogenide semiconductors to fabricate stable and high-performance transistors has also been reported. This class of materials is being explored as a possible substitute for silicon, given the complex and expensive manufacturing processes required to fabricate devices from the latter. However, if high-quality silicon films could be prepared by a solution process, this situation might change drastically. Here we demonstrate the solution processing of silicon thin-film transistors (TFTs) using a silane-based liquid precursor. Using this precursor, we have prepared polycrystalline silicon (poly-Si) films by both spin-coating and ink-jet printing, from which we fabricate TFTs with mobilities of 108 cm2 V-1 s-1 and 6.5 cm2 V-1 s-1, respectively. Although the processing conditions have yet to be optimized, these mobilities are already greater than those that have been achieved in solution-processed organic TFTs, and they exceed those of a-Si TFTs (≤ 1 cm2 V-1 s-1).

Generation of nematic liquid crystal alignment with polyimides exposed to linearly polarized light of long wavelength

The alignment behavior of nematic liquid crystal (LC) on the surface of four types of polyimide (PI) films, three aromatic PIs and a PI with an alicyclic dianhydride, exposed to linearly polarized light of long wavelength (366 nm) was investigated by polarizing microscopy. It was found that the alignment of the LC was induced by all of the exposed PIs and the alignment direction of the LC was perpendicular to the polarization direction of the linearly polarized light. The degree of uniformity of LC alignment increased with increasing exposure energy incident on PI films. To produce the uniform alignment state, the PI with an alicyclic dianhydride had to be exposed to higher energy than aromatic PIs. Ultraviolet (UV) -visible spectroscopy indicated that the absorbance changes of the aromatic PIs were much smaller than that of the PI with an alicyclic dianhydride when uniform alignment of the LC was caused. Furthermore, both UV-visible and infrared spectroscopy showed the change in the absorbance of the aro...

Alignment of a nematic liquid crystal induced by anisotropic photo-oxidation of photosensitive polyimide films

The alignment of a nematic liquid crystal (LC) could be induced by three polyimide (PI) films exposed to linearly polarized ultraviolet (UV) light of long wavelength (366 nm). The alignment could also be modified by changing the direction of polarization of the linearly polarized light (LPL). Infrared (IR) and UV-visible spectroscopy indicated that among the three PI films the PI with a benzophenone moiety and the PI with a diphenyl methane moiety were sensitive to UV radiation and susceptible to remarkable ablation after irradiation with LPL in air. Polarized UV-visible spectroscopy indicated that dichroism of the PI films was caused by LPL and altered by changing the polarization of the LPL. Furthermore, the PI films irradiated under vacuum showed little reduction in intensity of IR bands, which is in sharp contrast to the marked decreases in samples irradiated in atmospheres containing oxygen. This proves that oxygen is necessary to the ablative process of the PI films. Our results indicate that the me...

HOMOGENEOUS ALIGNMENT OF NEMATIC LIQUID CRYSTAL INDUCED BY POLYIMIDE EXPOSED TO LINEARLY POLARIZED LIGHT

Homogeneous alignment of a nematic liquid crystal (LC) was induced by a polyimide (PI) film containing diphenyl ether component exposed to linearly polarized light at 366 nm. Ultraviolet-visible absorption spectra showed that the change in the absorption of the PI was very small after exposure; the preliminary result indicated that the homogeneous alignment of a LC could be induced without significant change in the PI structure.

Photoinduced alignment of liquid crystals parallel to the polarization direction of linearly polarized light

The alignment direction of liquid crystals on polyimide alignment films prepared by in situ exposure to linearly polarized light (LPL) during thermal imidization of poly(amic acid)s has been found to be parallel to the direction of polarization of the LPL, whereas the conventional method, in which the alignment layers are exposed to LPL after imidization, leads to alignment perpendicular to the direction of polarization of the LPL.

Thermal stability of alignment of a nematic liquid crystal induced by polyimides exposed to linearly polarized light

The thermal stability of alignment of a nematic liquid crystal (LC) on three polyimide (PI) films exposed to linearly polarized light at 366 nm was investigated. Polarizing optical microscopy analysis indicates that the thermal stability of the LC alignment on the PI film without significant structural change was higher than that with obvious structural change.