Yasuyuki Ohyagi

Nanophotonic code embedded in embossed hologram for hierarchical information retrieval

A hierarchical hologram works in both optical far-fields and near-fields, the former being associated with conventional holographic images, and the latter being associated with the optical intensity distribution based on a nanometric structure that is accessible only via optical near-fields. We propose embedding a nanophotonic code, which is retrievable via optical near-field interactions involving nanometric structures, within an embossed hologram. Due to the one-dimensional grid structure of the hologram, evident polarization dependence appears in retrieving the code. Here we describe the basic concepts, numerical simulations, and experimental results in fabrication of a prototype hierarchical hologram and describe its optical characterization.

Nano-artifact metrics based on random collapse of resist

Artifact metrics is an information security technology that uses the intrinsic characteristics of a physical object for authentication and clone resistance. Here, we demonstrate nano-artifact metrics based on silicon nanostructures formed via an array of resist pillars that randomly collapse when exposed to electron-beam lithography. The proposed technique uses conventional and scalable lithography processes, and because of the random collapse of resist, the resultant structure has extremely fine-scale morphology with a minimum dimension below 10 nm, which is less than the resolution of current lithography capabilities. By evaluating false match, false non-match and clone-resistance rates, we clarify that the nanostructured patterns based on resist collapse satisfy the requirements for high-performance security applications.

Unidirectional light propagation through two-layer nanostructures based on optical near-field interactions

We theoretically demonstrate direction-dependent polarization conversion efficiency, yielding unidirectional light transmission, through a two-layer nanostructure by using the angular spectrum representation of optical near fields. The theory provides results that are consistent with electromagnetic numerical simulations. This study reveals that optical near-field interactions among nanostructured matter can provide unique optical properties, such as the unidirectionality observed here, and offers fundamental guiding principles for understanding and engineering nanostructures for realizing novel functionalities.

The evaluation of speckle contrast with variable speckle generator

— While laser projection has many advantages, there is a problem with speckle patterns generated as a result of interference of the laser beam and results in bad effects to observers. In 2010, a variable speckle generator, which produces an angular shift of incident light to the screen and generates variable speckle patterns, was suggested. In this study, the performance of a variable speckle generator by using a volume phase holographic beam shaper and scanning mirror was investigated in detail by evaluating both the objective and subjective speckle contrast. The morphology of the speckle pattern was also investigated when the variable speckle generator was activated. With a scanning VPH beam shaper, the objective speckle was effectively reduced because each point of the VPH beam shaper generated different speckle patterns and coherency among each pattern disappeared by using the scan process. On the other hand, subjective speckle was also dramatically reduced by changing the incident angle on the screen, which resulted in generating variable subjective speckle. It was also shown that the speckle reduction rate by using a variable speckle generator did not depend on the coherent length of a laser by evaluating the normalized speckle contrast against the angular shift on the screen.

Optical near-field–mediated polarization asymmetry induced by two-layer nanostructures

We demonstrate that a two-layer shape-engineered nanostructure exhibits asymmetric polarization conversion efficiency thanks to near-field interactions. We present a rigorous theoretical foundation based on an angular-spectrum representation of optical near-fields that takes account of the geometrical features of the proposed device architecture and gives results that agree well with electromagnetic numerical simulations. The principle used here exploits the unique intrinsic optical near-field processes associated with nanostructured matter, while eliminating the need for conventional scanning optical fiber probing tips, paving the way to novel nanophotonic devices and systems.

32.1: Laser Projection System with Variable Speckle Generator

Laser projector with variable speckle generator was introduced, which image of micro display was projected on screen. Variable speckle generator utilizing holographic beam shaper and scanning mirror made angular shift of incident light and generated numerical speckle pattern in a short time. Speckle contrast of 0.03 was achieved.

Demonstration of modulatable optical near-field interactions between dispersed resonant quantum dots

We experimentally demonstrated the basic concept of modulatable optical near-field interactions by utilizing energy transfer between closely positioned resonant CdSe/ZnS quantum dot (QD) pairs dispersed on a flexible substrate. Modulation by physical flexion of the substrate changes the distances between quantum dots to control the magnitude of the coupling strength. The modulation capability was qualitatively confirmed as a change of the emission spectrum. We defined two kinds of modulatability for quantitative evaluation of the capability, and an evident difference was revealed between resonant and non-resonant QDs.

Optical nano artifact metrics using silicon random nanostructures

Nano-artifact metrics exploit unique physical attributes of nanostructured matter for authentication and clone resistance, which is vitally important in the age of Internet-of-Things where securing identities is critical. However, expensive and huge experimental apparatuses, such as scanning electron microscopy, have been required in the former studies. Herein, we demonstrate an optical approach to characterise the nanoscale-precision signatures of silicon random structures towards realising low-cost and high-value information security technology. Unique and versatile silicon nanostructures are generated via resist collapse phenomena, which contains dimensions that are well below the diffraction limit of light. We exploit the nanoscale precision ability of confocal laser microscopy in the height dimension; our experimental results demonstrate that the vertical precision of measurement is essential in satisfying the performances required for artifact metrics. Furthermore, by using state-of-the-art nanostructuring technology, we experimentally fabricate clones from the genuine devices. We demonstrate that the statistical properties of the genuine and clone devices are successfully exploited, showing that the liveness-detection-type approach, which is widely deployed in biometrics, is valid in artificially-constructed solid-state nanostructures. These findings pave the way for reasonable and yet sufficiently secure novel principles for information security based on silicon random nanostructures and optical technologies.

Eigenanalysis of morphological diversity in silicon random nanostructures formed via resist collapse

Nano-artifact metrics is an information security principle and technology that exploits physically uncontrollable processes occurring at the nanometer-scale to protect against increasing security threats. Versatile morphological patterns formed on the surfaces of planar silicon devices originating from resist collapse are one of the most unique and useful vehicles for nano-artifact metrics. In this study, we demonstrate the eigenanalysis of experimentally fabricated silicon random nanostructures, through which the diversity and the potential capacity of identities are quantitatively characterized. Our eigenspace-based approach provides intuitive physical pictures and quantitative discussions regarding the morphological diversity of nanostructured devices while unifying measurement stability, which is one of the most important concerns regarding security applications. The analysis suggests approximately 10115 possible identities per 0.18-μm2 nanostructure area, indicating the usefulness of nanoscale versatile morphology. The presented eigenanalysis approach has the potential to be widely applicable to other materials, devices, and system architectures.

Holographic polymer dispersed liquid crystal system utilizing the co-polymerizations with siloxane compounds and polypropylene glycol derivatives

Holographic polymer dispersed liquid crystal (HPDLC) has a feature that can control diffraction of light by applying electric field. HPDLC can be used for optical elements such as an optical switch, or a polarized beam splitter etc. One of the reactive systems for making HPDLC is well known photopolymerization-induced phase separation (PIPS). The performance of HPDLC by PIPS is dependent on distribution of oriented liquid crystal (LC) molecules, or size and shape of LC droplets. These are controlled by chemical structure or functional group of polymer matrix. In this report, Organic-inorganic hybrid materials having sensitivity at 532 nm were synthesized. Polymer matrix was formed with co-polymerization of siloxane-containing materials and poly (propylene glycol) derivatives functionalized with methacrylate groups. Siloxane chain was introduced in polymer matrix to encourage phase separation of LC and stabilize grating structure. In addition, poly (propylene glycol) derivatives were designed to control polymerization rate and extent of phase separation of LC. The characterization of HPDLC was evaluated in terms of diffraction efficiency, contrast between diffraction and transparency modes by applying voltage, and switch speed. As a result, the separation ratio of p-polarized light and s-polarized light was 100:1. The value of ▵n was 0.075, and the index matching of both polymer-rich layer and LC-rich layer was completed at voltage of 17V/μm.