Yawei Zhou

Enhancement in Proton Conductivity and Thermal Stability in Nafion Membranes Induced by Incorporation of Sulfonated Carbon Nanotubes

Proton exchange membrane fuel cell (PEMFC) is one of the most promising green power sources, in which perfluorinated sulfonic acid ionomer-based membranes (e.g., Nafion) are widely used. However, the widespread application of PEMFCs is greatly limited by the sharp degradation in electrochemical properties of the proton exchange membranes under high temperature and low humidity conditions. In this work, the high-performance sulfonated carbon nanotubes/Nafion composite membranes (Su-CNTs/Nafion) for the PEMFCs were prepared and the mechanism of the microstructures on the macroscopic properties of membranes was intensively studied. Microstructure evolution in Nafion membranes during water uptake was investigated by positron annihilation lifetime spectroscopy, and results strongly showed that the Su-CNTs or CNTs in Nafion composite membranes significantly reinforced Nafion matrices, which influenced the development of ionic-water clusters in them. Proton conductivities in Su-CNTs/Nafion composite membranes were remarkably enhanced due to the mass formation of proton-conducting pathways (water channels) along the Su-CNTs. In particular, these pathways along Su-CNTs in Su-CNTs/Nafion membranes interconnected the isolated ionic-water clusters at low humidity and resulted in less tortuosity of the water channel network for proton transportation at high humidity. At a high temperature of 135 °C, Su-CNTs/Nafion membranes maintained high proton conductivity because the reinforcement of Su-CNTs on Nafion matrices reduced the evaporation of water molecules from membranes as well as the hydrophilic Su-CNTs were helpful for binding water molecules.

Defects evolution and their impacts on conductivity of indium tin oxide thin films upon thermal treatment

Indium tin oxide (ITO) thin films were deposited on silicon substrates by radio-frequency magnetron sputtering. The influence of annealing temperature on the crystallite, surface morphology, defects evolution, and electrical property of the thin films was studied. The conductivity of the ITO films was significantly enhanced by two orders of magnitude by increasing the annealing temperature up to 600 °C, which was interpreted in point view of defects evolution in ITO films as revealed by positron annihilation. It was interesting to find that positron diffusion length was amazingly comparable to crystallite size in ITO films annealed below 300 °C, indicating positrons were preferentially localized and annihilated in defects around crystallite boundaries. By further increasing the temperature, positron diffusion length was far beyond the grain size with little increment. This demonstrated that defects were effectively removed around grain boundaries. The results indicated defect structure around crystallite/grain boundaries played an important role on carrier transportation in nanocrystal ITO films.

Vacancy defects and optoelectrical properties for fluorine tin oxide thin films with various SnF2 contents

Fluorine doped tin oxide (FTO) thin films were deposited on glass substrates by e-beam evaporation. Much higher carrier concentration, broader optical band gap, and average transmittance over 80% were obtained with SnF2 doped SnO2 thin films. Positron annihilation results showed that there are two kinds of vacancy clusters with different sizes existing in the annealed FTO thin films, and the concentration of the larger vacancy clusters of VSnO in the thin films increases with increasing SnF2 contents. Meanwhile, photoluminescence spectra results indicated that the better electrical and optical properties of the FTO thin films are attributed to FO substitutions and oxygen vacancies with higher concentration, which are supported by positron annihilation Doppler broadening results and confirmed by X-ray photoelectron spectroscopy. The results showed that widening of the optical band gap of the FTO thin films strongly depends on the carrier concentration, which is interpreted for the Burstein-Moss effect and is associated with the formation of FO and oxygen vacancies with increasing SnF2 content.Fluorine doped tin oxide (FTO) thin films were deposited on glass substrates by e-beam evaporation. Much higher carrier concentration, broader optical band gap, and average transmittance over 80% were obtained with SnF2 doped SnO2 thin films. Positron annihilation results showed that there are two kinds of vacancy clusters with different sizes existing in the annealed FTO thin films, and the concentration of the larger vacancy clusters of VSnO in the thin films increases with increasing SnF2 contents. Meanwhile, photoluminescence spectra results indicated that the better electrical and optical properties of the FTO thin films are attributed to FO substitutions and oxygen vacancies with higher concentration, which are supported by positron annihilation Doppler broadening results and confirmed by X-ray photoelectron spectroscopy. The results showed that widening of the optical band gap of the FTO thin films strongly depends on the carrier concentration, which is interpreted for the Burstein-Moss effect and ...