Yea- Lee

Controlling Half-Metallicity of Graphene Nanoribbons by Using a Ferroelectric Polymer

On the basis of first-principles computational approaches, we present a new method to drive zigzag graphene nanoribons (ZGNRs) into the half-metallic state using a ferroelectric material, poly(vinylidene fluoride) (PVDF). Owing to strong dipole moments of PVDFs, the ground state of the ZGNR becomes half-metallic when a critical coverage of PVDFs is achieved on the ZGNR. Since ferroelectric polymers are physisorbed, the direction of the dipole field in PVDFs can be rotated by relatively small external electric fields, and the switching between half-metallic and insulating states may be achieved. Our results suggest that, without excessively large external gate electric fields, half-metallic states of ZGNRs are realizable through the deposition of ferroelectric polymers and their electronic and magnetic properties are controllable via noninvasive mutual interactions.

Tunneling-induced Spectral Broadening of a Single Atom in a Three-Dimensional Optical Lattice

We have investigated the spectral broadening in the near-resonance fluorescence spectrum of a single rubidium atom trapped in a three-dimensional (3D) optical lattice in a strong Lamb-Dicke regime. Besides the strong Rayleigh peak, the spectrum exhibited weak Stokes and anti-Stokes Raman sidebands. The line width of the Rayleigh peak for low potential depths was well explained by matter-wave tunneling between the first-two lowest vibrational states of 3D anisotropic harmonic potentials of adjacent local minima of the optical lattice.

Orbitally Matched Edge-Doping in Graphene Nanoribbons

A series of trigonal planar N-, O-, and S-dopant atoms incorporated along the convex protrusion lining the edges of bottom-up synthesized chevron graphene nanoribbons (cGNRs) induce a characteristic shift in the energy of conduction and valence band edge states along with a significant reduction of the band gap of up to 0.3 eV per dopant atom per monomer. A combination of scanning probe spectroscopy and density functional theory calculations reveals that the direction and the magnitude of charge transfer between the dopant atoms and the cGNR backbone are dominated by inductive effects and follow the expected trend in electronegativity. The introduction of heteroatom dopants with trigonal planar geometry ensures an efficient overlap of a p-orbital lone-pair centered on the dopant atom with the extended π-system of the cGNR backbone effectively extending the conjugation length. Our work demonstrates a widely tunable method for band gap engineering of graphene nanostructures for advanced electronic applications.

Manifestation of axion electrodynamics through magnetic ordering on edges of a topological insulator

Significance Interactions between two adjacent surfaces of different surface orientations in a single-crystal topological insulator are investigated. We show that the edge between two surfaces can host nontrivial axion electrodynamics with sizeable experimental signals owing to the unique interaction between the two topological surface states. We find that the large work function difference between facets in a topological insulator can generate strong electric fields around the edges and that, in turn, the electric fields give rise to effective magnetic fields for a given broken time-reversal symmetry. Our theoretical work highlights a route to reveal intriguing axion electrodynamics in a real solid and provides methods to exploit macroscopic topological states. Because topological surface states of a single-crystal topological insulator can exist on all surfaces with different crystal orientations enclosing the crystal, mutual interactions among those states contiguous to each other through edges can lead to unique phenomena inconceivable in normal insulators. Here we show, based on a first-principles approach, that the difference in the work function between adjacent surfaces with different crystal-face orientations generates a built-in electric field around facet edges of a prototypical topological insulator such as Bi2Se3. Owing to the topological magnetoelectric coupling for a given broken time-reversal symmetry in the crystal, the electric field, in turn, forces effective magnetic dipoles to accumulate along the edges, realizing the facet-edge magnetic ordering. We demonstrate that the predicted magnetic ordering is in fact a manifestation of the axion electrodynamics in real solids.

Hierarchical On-Surface Synthesis of Graphene Nanoribbon Heterojunctions

Bottom-up graphene nanoribbon (GNR) heterojunctions are nanoscale strips of graphene whose electronic structure abruptly changes across a covalently bonded interface. Their rational design offers opportunities for profound technological advancements enabled by their extraordinary structural and electronic properties. Thus far, the most critical aspect of their synthesis, the control over sequence and position of heterojunctions along the length of a ribbon, has been plagued by randomness in monomer sequences emerging from step-growth copolymerization of distinct monomers. All bottom-up GNR heterojunction structures created so far have exhibited random sequences of heterojunctions and, while useful for fundamental scientific studies, are difficult to incorporate into functional nanodevices as a result. In contrast, we describe a hierarchical fabrication strategy that allows the growth of bottom-up GNRs that preferentially exhibit a single heterojunction interface rather than a random statistical sequence of junctions along the ribbon. Such heterojunctions provide a viable platform that could be directly used in functional GNR-based device applications at the molecular scale. Our hierarchical GNR fabrication strategy is based on differences in the dissociation energies of C-Br and C-I bonds that allow control over the growth sequence of the block copolymers from which GNRs are formed and consequently yields a significantly higher proportion of single-junction GNR heterostructures. Scanning tunneling spectroscopy and density functional theory calculations confirm that hierarchically grown heterojunctions between chevron GNR (cGNR) and binaphthyl-cGNR segments exhibit straddling Type I band alignment in structures that are only one atomic layer thick and 3 nm in width.

Topological Phases in Cove-Edged and Chevron Graphene Nanoribbons: Geometric Structures, Z2 Invariants, and Junction States

Graphene nanoribbons (GNRs) have recently been shown by Cao, Zhao, and Louie [Cao, T.; Zhao, F.; Louie, S. G. Phys. Rev. Lett. 2017, 119, 076401] to possess distinct topological phases in general, characterized by a [Formula: see text]2 invariant. Cove-edged and chevron GNRs moreover are chemically and structurally diverse, quasi-one-dimensional (1D) nanostructures whose structure and electronic properties can be rationally controlled by bottom-up synthesis from precursor molecules. We derive the value of the topological invariant of the different types of cove-edged and chevron GNRs, and we investigate the electronic properties of various junctions formed by these GNRs, as well as such GNRs with the more common armchair or zigzag GNRs. We study the topological junction states at the interface of two topologically distinct segments. For an isolated GNR having two ends of different terminations, topological end states are shown to develop only at the topologically nontrivial end. Our work extends the explicit categorization of topological invariants of GNRs beyond the previously demonstrated armchair GNRs and provides new design rules for novel GNR junctions as well as future GNR-based nanoelectronic devices.

Isosteric Heat of Potential Confinement in the Hydrogen Storage Material

In the hydrogen storage problem, if an attractive potential well is formed inside the void space of porous materials, the storage gas density is expected to increase significantly compared to the H2 gas density outside the material. Actually, the overall H2 density inside the material is enhanced basically by a Boltzmann factor of exp[−U/kT] where U (<0) is some averaged potential energy. Corresponding to this negative potential energy, latent heat is released in the H2 gas confinement process. We theoretically investigate the energetics involved during the H2 storage in the potential well and, from the equilibrium thermodynamic principles, we derive a formalism for the isosteric heat of potential confinement of the H2 gas. Since the gas density inside the potential well increases tremendously, the van der Waals equation is adopted to describe the nonideal gas behavior of H2. We compare our results to the well-known expression for the isosteric heat of adsorption where, unlike our case, the molecules are bound to specific adsorption sites in the material.