Yi-Sen Shih
National Chiao Tung University
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Publication
Featured researches published by Yi-Sen Shih.
Journal of Physics: Condensed Matter | 2013
Jr-Sheng Tian; Yue-Han Wu; Chun-Yen Peng; Kun-An Chiu; Yi-Sen Shih; Hien Do; Pei-Yin Lin; Yen-Teng Ho; Ying-Hao Chu; Li Chang
The microstructure of semipolar [Formula: see text] ZnO deposited on (112) LaAlO3/(La,Sr)(Al,Ta)O3 was investigated by transmission electron microscopy. The ZnO shows an in-plane epitaxial relationship of [Formula: see text] with oxygen-face sense polarity. The misfit strain along [Formula: see text] and [Formula: see text] is relieved through the formation of misfit dislocations with the Burgers vectors [Formula: see text] and [Formula: see text], respectively. The line defects in the semipolar ZnO are predominantly perfect dislocations, and the dislocation density decreases with increasing ZnO thickness as a result of dislocation reactions. Planar defects were observed to lie in the M-plane and extend along 〈0001〉, whereas basal stacking faults were rarely found.
Journal of Physics: Condensed Matter | 2013
Jr-Sheng Tian; Yue-Han Wu; Chun-Yen Peng; Kun-An Chiu; Yi-Sen Shih; Hien Do; Pei-Yin Lin; Yen-Teng Ho; Ying-Hao Chu; Li Chang
The microstructure of semipolar [Formula: see text] ZnO deposited on (112) LaAlO3/(La,Sr)(Al,Ta)O3 was investigated by transmission electron microscopy. The ZnO shows an in-plane epitaxial relationship of [Formula: see text] with oxygen-face sense polarity. The misfit strain along [Formula: see text] and [Formula: see text] is relieved through the formation of misfit dislocations with the Burgers vectors [Formula: see text] and [Formula: see text], respectively. The line defects in the semipolar ZnO are predominantly perfect dislocations, and the dislocation density decreases with increasing ZnO thickness as a result of dislocation reactions. Planar defects were observed to lie in the M-plane and extend along 〈0001〉, whereas basal stacking faults were rarely found.
Nanoscale Research Letters | 2014
Pei-Yin Lin; J. F. Chen; Yi-Sen Shih; Li Chang
The attractive prospect for AlInN/GaN-based devices for high electron mobility transistors with advanced structure relies on high-quality AlInN epilayer. In this work, we demonstrate the growth of high-quality Al-rich AlInN films deposited on c-plane GaN substrate by metal-organic chemical vapor deposition. X-ray diffraction, scanning electron microscopy, and scanning transmission electron microscopy show that the films lattice-matched with GaN can have a very smooth surface with good crystallinity and uniform distribution of Al and In in AlInN.
Physica Status Solidi-rapid Research Letters | 2015
Yi-Sen Shih; Pei‐Yi Lin; Lin-Lung Wei; Li Chang
On semipolar epitaxial ZnO grown by chemical vapor deposition consists of two distinct orientations as evidenced by transmission electron microscopy and X-ray diffraction. The initially grown ZnO on GaN follows the GaN lattice with the epitaxial relationship of // and The other oriented ZnO domains then grow on faceted with and with good coherency with the -oriented grains. (© 2015 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
Physica Status Solidi-rapid Research Letters | 2015
Yi-Sen Shih; Pei‐Yi Lin; Lin-Lung Wei; Li Chang
On semipolar epitaxial ZnO grown by chemical vapor deposition consists of two distinct orientations as evidenced by transmission electron microscopy and X-ray diffraction. The initially grown ZnO on GaN follows the GaN lattice with the epitaxial relationship of // and The other oriented ZnO domains then grow on faceted with and with good coherency with the -oriented grains. (© 2015 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
Physica Status Solidi-rapid Research Letters | 2014
Yi-Sen Shih; Pei‐Yi Lin; Lin-Lung Wei; Li Chang
On semipolar epitaxial ZnO grown by chemical vapor deposition consists of two distinct orientations as evidenced by transmission electron microscopy and X-ray diffraction. The initially grown ZnO on GaN follows the GaN lattice with the epitaxial relationship of // and The other oriented ZnO domains then grow on faceted with and with good coherency with the -oriented grains. (© 2015 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
Physica Status Solidi-rapid Research Letters | 2014
Yi-Sen Shih; Pei‐Yi Lin; Lin-Lung Wei; Li Chang
On semipolar epitaxial ZnO grown by chemical vapor deposition consists of two distinct orientations as evidenced by transmission electron microscopy and X-ray diffraction. The initially grown ZnO on GaN follows the GaN lattice with the epitaxial relationship of // and The other oriented ZnO domains then grow on faceted with and with good coherency with the -oriented grains. (© 2015 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
Physica Status Solidi-rapid Research Letters | 2013
Jr-Sheng Tian; Chun-Yen Peng; Wei-Lin Wang; Yue-Han Wu; Yi-Sen Shih; Kun-An Chiu; Yen-Teng Ho; Ying-Hao Chu; Li Chang
Materials Letters | 2014
Yi-Sen Shih; Pei-Yin Lin; J. F. Chen; Li Chang
Thin Solid Films | 2016
Tzu-Chun Yen; Yen-Teng Ho; Chun-Yen Peng; Jr-Sheng Tian; Yi-Sen Shih; Lin-Lung Wei; Wei-Lin Wang; Kun-An Chiu; Li Chang