Yi-Tsung Chang

High performance midinfrared narrow-band plasmonic thermal emitter

The blackbody radiation spectrum is fundamental to any thermal emitter. However, by properly designing the emitter structure, a narrow bandwidth and high power infrared source can be achieved. This invention consists of a triple layer structure by sandwiching a dielectric SiO2 layer between two Ag metal films on the Si substrate. The top Ag layer is perforated by periodic holes. When the device was heated, the background thermal radiation was suppressed by the bottom Ag whose emissivity is very low. The thermal radiation generated in the SiO2 layer resonant between two metal films and the Ag∕SiO2 and the Ag/air surface plasmon polaritons are induced and converted to light radiation. Strong resonance at Ag∕SiO2 (1,0) degenerate modes results in the coherent light radiation at the wavelength associated with the dielectric constant of SiO2 and the lattice constant of the perforated hole array. The ratio of the full width at half maximum to the peak wavelength is 0.114. This narrow bandwidth and high power in...

Extraordinary transmission through a silver film perforated with cross shaped hole arrays in a square lattice

In this work, the transmission through cross shaped hole with different sizes but the same lattice constant was measured with the polarized light to investigate the variation of localized charge oscillation around the hole. The comparison between the transmission intensities through the similarly arranged periodic hole array with different hole shapes, i.e., cross, square, and rectangular, were also measured. The cross shaped hole gives rise to a larger transmission of light than those perforated with square or rectangular hole.

Reflection and emission properties of an infrared emitter.

The reflection and emission properties of an infrared emitter, which is a plasmonic multilayer structure consisting of a relief metallic grating, a waveguide layer, and a metallic substrate are investigated both experimentally and theoretically. A localized surface plasmon polariton (SPP) mode which is angular-independent in almost the full range of incident angles is observed. The thermal emission of this structure is also measured. It is found that the emission peak coincides with the angular-independent localized SPP mode. In addition, the emission spectrum of the plasmonic emitter can be predicted by investigating the reflectance spectrum.

Wavelength selective quantum dot infrared photodetector with periodic metal hole arrays

In this letter, the effect of extraordinary transmission of periodic metal hole arrays is directly integrated into the quantum dot infrared photodetector with broadband response. It is found that the detector response is strongly modulated by the extraordinary transmission from the excitation of surface plasmon.

Localized surface plasmon polaritons in Ag∕SiO2∕Ag plasmonic thermal emitter

The reflection dispersion relation and emission spectra of Ag∕SiO2∕Ag trilayer plasmonic thermal emitters with different lattice constant and Ag line width were investigated. The top Ag film is perforated with parallel line-shape hole array. The induced Ag∕SiO2 surface plasmons at both top and bottom Ag∕SiO2 interface are found coupled together. The coupling effect results in the localized surface plasmon polaritons confined at the top Ag∕SiO2 interface which exhibit the Fabry–Perot resonance. The thermal emission peak position coincides with the reflection minimum in the dispersion relation and shifts to long wavelength as the Ag line width increases, which proves that the emission is due to the excitation of localized surface plasmon polaritons. Moreover, the emitted light is polarized perpendicular to the parallel metal lines.

Coupling of surface plasmons between two silver films in a Ag/SiO2/Ag plasmonic thermal emitter with grating structure

The reflection and emission spectra of Ag/SiO2/Ag trilayer plasmonic thermal emitters with different SiO2 thicknesses are investigated. The top Ag film is perforated with periodic slits. It is found that the coupling of surface plasmons at the top and bottom Ag/SiO2 interface results in the redshift in thermal emission peaks. In this Ag/SiO2/Ag plasmonic thermal emitter, the electromagnetic field exhibits either Fabry–Perot resonance or propagating surface plasmons depending on the thickness of SiO2 layer. By varying the thickness of SiO2 layer, transition from localized to grating-coupled propagating surface plasmon modes is observed.

Coupling of surface plasmons between two silver films in a plasmonic thermal emitter

The emission spectra of Ag∕SiO2∕Ag trilayer plasmonic thermal emitters with various SiO2 thicknesses were investigated. By analyzing the relationship between emission peaks and thicknesses of SiO2, the coupling of surface plasmons between two silver films in a plasmonic thermal emitter is demonstrated and the coupling length is determined as well. Furthermore, the dispersion relation of plasmonic thermal emitter is detected by measuring the reflection spectra with various incident angles. This confirms that the main mechanism involved in the emission of a plasmonic thermal emitter is due to the excitation of surface plasmons.

Electron transport in In-rich InxGa1−xN films

We have performed electrical transport measurements on metal-organic vapor phase epitaxy grown In-rich InxGa1−xN (x=1, 0.98, and 0.92) films. Within the experimental error, the electron density in InGaN films is temperature independent over a wide temperature range (4K⩽T⩽285K). Therefore, InxGa1−xN (0.92⩽x⩽1) films can be regarded as degenerate semiconductor systems. The experimental results demonstrate that electron transport in In-rich InxGa1−xN (x=1, 0.98, and 0.92) films is metalliclike. This is supported by the temperature dependence of the density, resistivity, and mobility which is similar to that of a metal. We suggest that over the whole measuring temperature range residue imperfection scattering limits the electron mobility in In-rich InxGa1−xN (x=1, 0.98, and 0.92) films.

Emission properties of Ag/dielectric/Ag plasmonic thermal emitter with different lattice type, hole shape, and dielectric material

The emission spectra of the trilayer Ag/dielectric/Ag plasmonic thermal emitter (PTE) with different lattice type, hole shape, and dielectric material were investigated. It is found that the position and number of thermal emission peak of the PTE are determined by the lattice type not by the hole shape and dielectric materials. The PTE with hexagonal lattice generates only one strong (1,0) Ag/dielectric emission peak, whereas a similar PTE with square lattice generates two strong (1,0) and (1,1) Ag/dielectric emission peaks, their relative intensities follow the blackbody radiation law. This phenomenon suggests the coupling of Ag/dielectric and Ag/air modes.

Hydrogenated amorphous silicon solar cell on glass substrate patterned by hexagonal nanocylinder array

The hydrogenated amorphous silicon thin film solar cell fabricated on the glass substrate patterned by hexagonal nanocylinder array prepared by self-assembled SiO2 nanoparticles and nanosphere lithography was investigated. It is demonstrated that the short-circuit current of the patterned solar cell with 65 nm depth nanocylinder increases from 12.3 to 14.4 mA/cm2, and the efficiency increases from 5.18% to 6.59% as compared to the flat solar cell. These phenomena suggest that both effective light trapping and localized surface plasmon lead to significant improvement of light absorption in amorphous silicon solar cells.The hydrogenated amorphous silicon thin film solar cell fabricated on the glass substrate patterned by hexagonal nanocylinder array prepared by self-assembled SiO2 nanoparticles and nanosphere lithography was investigated. It is demonstrated that the short-circuit current of the patterned solar cell with 65 nm depth nanocylinder increases from 12.3 to 14.4 mA/cm2, and the efficiency increases from 5.18% to 6.59% as compared to the flat solar cell. These phenomena suggest that both effective light trapping and localized surface plasmon lead to significant improvement of light absorption in amorphous silicon solar cells.