Yi-Yang Sun

Graphene Oxide as an Ideal Substrate for Hydrogen Storage

Organometallic nanomaterials hold the promise for molecular hydrogen (H(2)) storage by providing nearly ideal binding strength to H(2) for room-temperature applications. Synthesizing such materials, however, faces severe setbacks due to the problem of metal clustering. Inspired by a recent experimental breakthrough ( J. Am. Chem. Soc. 2008 , 130 , 6992 ), which demonstrates enhanced H(2) binding in Ti-grafted mesoporous silica, we propose combining the graphene oxide (GO) technique with Ti anchoring to overcome the current synthesis bottleneck for practical storage materials. Similar to silica, GO contains ample hydroxyl groups, which are the active sites for anchoring Ti atoms. GO can be routinely synthesized and is much lighter than silica. Hence, higher gravimetric storage capacity can be readily achieved. Our first-principles computations suggest that GO is primarily made of low-energy oxygen-containing structural motifs on the graphene sheet. The Ti atoms bind strongly to the oxygen sites with binding energies as high as 450 kJ/mol. This is comparable to that of silica and is indeed enough to prevent the Ti atoms from clustering. Each Ti can bind multiple H(2) with the desired binding energies (14-41 kJ/mol-H(2)). The estimated theoretical gravimetric and volumetric densities are 4.9 wt % and 64 g/L, respectively.

Strong Covalency-Induced Recombination Centers in Perovskite Solar Cell Material CH3NH3PbI3

Inorganic-organic hybrid perovskites are a new family of solar cell materials, which have recently been used to make solar cells with efficiency approaching 20%. Here, we report the unique defect chemistry of the prototype material, CH3NH3PbI3, based on first-principles calculation. We found that both the Pb cations and I anions in this material exhibit strong covalency as characterized by the formation of Pb dimers and I trimers with strong covalent bonds at some of the intrinsic defects. The Pb dimers and I trimers are only stabilized in a particular charge state with significantly lowered energy, which leads to deep charge-state transition levels within the band gap, in contradiction to a recent proposal that this system has only shallow intrinsic defects. Our results show that, in order to prevent the deep-level defects from being effective recombination centers, the equilibrium carrier concentrations should be controlled so that the Fermi energy is about 0.3 eV away from the band edges. Beyond this range, according to a Shockley-Read-Hall analysis, the non-equilibrium carrier lifetime will be strongly affected by the concentration of I vacancies and the anti-site defects with I occupying a CH3NH3 site.

Topological Insulator Thin Films of Bi2Te3 with Controlled Electronic Structure

Topological insulator thin films of Bi2Te3 with controlled electronic structure can be grown by regulating the molecular beam epitaxy (MBE) growth kinetics without any extrinsic doping. N- to p-type conversion results from the change in the concentrations of Te-Bi donors and Bi-Te acceptors. This represents a step toward controlling topological surface states, with potential applications in devices.

Chalcogenide Perovskites for Photovoltaics

Chalcogenide perovskites are proposed for photovoltaic applications. The predicted band gaps of CaTiS3, BaZrS3, CaZrSe3, and CaHfSe3 with the distorted perovskite structure are within the optimal range for making single-junction solar cells. The predicted optical absorption properties of these materials are superior compared with other high-efficiency solar-cell materials. Possible replacement of the alkaline-earth cations by molecular cations, e.g., (NH3NH3)(2+), as in the organic-inorganic halide perovskites (e.g., CH3NH3PbI3), are also proposed and found to be stable. The chalcogenide perovskites provide promising candidates for addressing the challenging issues regarding halide perovskites such as instability in the presence of moisture and containing the toxic element Pb.

Ab initio design of Ca-decorated organic frameworks for high capacity molecular hydrogen storage with enhanced binding

Ab initio calculations show that Ca can decorate organic linkers of metal-organic framework, MOF-5, with a binding energy of 1.25 eV. The Ca-decorated MOF-5 can store molecular hydrogen (H2) in both high gravimetric (4.6 wt %) and high volumetric (36 g/l) capacities. Even higher capacities (5.7 wt % and 45 g/l) can be obtained in a rationally designed covalent organic framework system, COF-α, with decorated Ca. Both density functional theory and second-order Moller–Plesset perturbation calculations show that the H2 binding in these systems is significantly stronger than the van der Waals interactions, which is required for H2 storage at near ambient conditions.

Band gap engineering of a soft inorganic compound PbI2 by incommensurate van der Waals epitaxy

Van der Waals epitaxialgrowth had been thought to have trivial contribution on inducing substantial epitaxial strain in thin films due to its weak nature of van der Waals interfacial energy. Due to this, electrical and optical structure engineering via van der Waals epitaxial strain has been rarely studied. In this report, we show that significant band structure engineering could be achieved in a soft thin film material PbI2 via van der Waals epitaxy. The thickness dependent photoluminescence of single crystal PbI2 flakes was studied and attributed to the substrate-film coupling effect via incommensurate van der Waals epitaxy. It is proposed that the van der Waals strain is resulted from the soft nature of PbI2 and large van der Waals interaction due to the involvement of heavy elements. Such strain plays vital roles in modifying the band gap of PbI2. The deformation potential theory is used to quantitatively unveil the correlation between thickness, strain, and band gap change. Our hypothesis is confirmed by the subsequent mechanical bending test and Raman characterization.

Carbon Kagome Lattice and Orbital-Frustration-Induced Metal-Insulator Transition for Optoelectronics

A three-dimensional elemental carbon kagome lattice, made of only fourfold-coordinated carbon atoms, is proposed based on first-principles calculations. Despite the existence of 60° bond angles in the triangle rings, widely perceived to be energetically unfavorable, the carbon kagome lattice is found to display exceptional stability comparable to that of C(60). The system allows us to study the effects of triangular frustration on the electronic properties of realistic solids, and it demonstrates a metal-insulator transition from that of graphene to a direct gap semiconductor in the visible blue region. By minimizing s-p orbital hybridization, which is an intrinsic property of carbon, not only the band edge states become nearly purely frustrated p states, but also the band structure is qualitatively different from any known bulk elemental semiconductors. For example, the optical properties are similar to those of direct-gap semiconductors GaN and ZnO, whereas the effective masses are comparable to or smaller than those of Si.

Enhanced dihydrogen adsorption in symmetry-lowered metal–porphyrin-containing frameworks

Porphyrin is a very important component of natural and artificial catalysis and oxygen delivery in blood. Here, we report that, based on first-principles density-functional calculations, a hydrogen molecule can be adsorbed non-dissociatively onto Ti-, V-, and Fe-porphyrins, similar to oxygen adsorption in heme-containing proteins, with a significant energy gain, greater than 0.3 eV per H(2). The dihydrogen-heme complex will be non-magnetic, as is oxyhemoglobin. In contrast to the backward electron donation of Fe(III)-O(2)(-) in oxyhemoglobin, the dihydrogen binding originates from electron donation from H(2) to the Fe(II). We have identified that the local symmetry of the transition metal center of porphyrins uniquely determines the binding strength, and, thus, one can even manipulate the strength by intentionally and systematically breaking symmetry.

Stacking Fault Enriching the Electronic and Transport Properties of Few-Layer Phosphorenes and Black Phosphorus

Interface engineering is critical for enriching the electronic and transport properties of two-dimensional materials. Here, we identify a new stacking, named Aδ, in few-layer phosphorenes (FLPs) and black phosphorus (BP) based on first-principles calculation. With its low formation energy, the Aδ stacking could exist in FLPs and BP as a stacking fault. The presence of the Aδ stacking fault induces a direct to indirect transition of the band gap in FLPs. It also affects the carrier mobilities by significantly increasing the carrier effective masses. More importantly, the Aδ stacking enables the fabrication of a whole spectrum of lateral junctions with all the type-I, II, and III alignments simply through the manipulation of the van der Waals stacking without resorting to any chemical modification. This is achieved by the widely tunable electron affinity and ionization potential of FLPs and BP with the Aδ stacking.

Molecular doping of ZnO by ammonia: a possible shallow acceptor

Stable p-type doping of ZnO has been a major technical barrier for the application of ZnO in optoelectronic devices. While p-type conductivity for nitrogen-doped ZnO has been repeatedly reported, its origin remains mysterious. Here, using first-principles calculation, we predict that an ammonia molecule could counterintuitively assume a Zn site and form a substitutional defect, (NH3)Zn. By comparing with other molecular dopants (N2 and NO) on the Zn site and N on the O site (NO), we found that (NH3)Zn is thermodynamically the most stable defect under O-rich conditions. The stability is attributed to the formation of a strong dative bond of the ammonia molecule with a neighbouring O atom. The (NH3)Zn defect is neutral regardless of the Fermi level of the system, but it can capture a H donor forming (NH4)Zn, which becomes an acceptor. Experimental evidence for the existence of this Zn-site N acceptor is provided based on a comparison of calculated and measured N 1s X-ray photoelectron spectra. Accurately calculating the (0/−) transition level for this and other N-based acceptors has been hindered by the theoretical method used. Experimental studies are called for to clarify its (0/−) transition level.