Yiming Bai

As-doped p-type ZnO films by sputtering and thermal diffusion process

As-doped p-type ZnO films were grown on GaAs by sputtering and thermal diffusion process. Hall effect measurements showed that the as-grown films were of n-type conductivity and they were converted to p-type behavior after thermal annealing. Moreover, the hole concentration of As-doped p-type ZnO was very impressible to the oxygen ambient applied during the annealing process. In addition, the bonding state of As in the films was investigated by x-ray photoelectron spectroscopy. This study not only demonstrated an effective method for reliable and reproducible p-type ZnO fabrication but also helped to understand the doping mechanism of As-doped ZnO.

p-type Zn1-xMgxO Films with Sb Doping by Radio-Frequency Magnetron Sputtering

Sb-doped Zn1-xMgxO films were grown on c-plane sapphire ubstrates by radio-frequency magnetron sputtering. The p-type conduction of the films (0.05 <= x <= 0.13) was confirmed by Hall measurements, revealing a hole concentration of 10(15)-10(16) cm(-3) and a mobility of 0.6-4.5 cm(2)/V s. A p-n homojunction comprising an undoped ZnO layer and an Sb-doped Zn0.95Mg0.05O layer shows a typical rectifying characteristic. Sb-doped p-type Zn1-xMgxO films also exhibit a changeable wider band gap as a function of x, implying that they can probably be used for fabrication of ZnO-based quantum wells and ultraviolet optoelectronic devices. (c) 2006 American Institute of Physics.

Oxygen vacancy formation, crystal structures, and magnetic properties of three SrMnO3−δ films

The crystal structures and magnetic properties of the 40 nm brownmillerite SrMnO2.5 film, perovskite SrMnO3-δ film, and mixed-phase film have been systematically investigated. The features of the oxygen vacancy ordering superstructure in the brownmillerite SrMnO2.5 film are observed from HRSTEM as follows: the dark stripes with a periodicity of four (110) planes of the cubic perovskite appearing at an angle of 45° with the substrate-film interface and extra reflection spots in fast Fourier transformation patterns along the (001) plane. When annealing the brownmillerite SrMnO2.5 film under higher oxygen pressure, the top portion undergoes structure transition into perovskite SrMnO3-δ as seen in the mixed-phase film consisting of the perovskite SrMnO3-δ phase dominating at the top part and the brownmillerite SrMnO2.5 phase dominating at the bottom part. The magnetic properties and Mn valences of the brownmillerite SrMnO2.5 film indicate that this film, similar to the bulk, is antiferromagnetic with TN at 37...

Interface as the origin of ferromagnetism in cobalt doped ZnO film grown on silicon substrate

We have investigated the magnetic properties of Co-doped zinc oxide (ZnO) film deposited on silicon substrate by magnetron sputtering. Co ions have a valence of 2+ and substitute for Zn sites in the lattice. By using a chemical etching method, an extrinsic ferromagnetism was demonstrated. The observed ferromagnetism is neither associated with magnetic precipitates nor with contamination, but originates from the silicon/silicon oxide interface. This interface ferromagnetism is characterized by being temperature independent and by having a parallel magnetic anisotropy

L10 FePt nanoparticles with distinct perpendicular magnetic anisotropy prepared on Au buffer layers by a micellar method

FePt nanoparticles were self-assembled on a MgO (001) substrate by a micellar method. We introduced an Au buffer layer to control the lattice orientation and the magnetic alignment of FePt nanoparticles. A distinct c-axis preferred orientation of the FePt nanoparticles was achieved during the thermal annealing treatment. The driving force of lattice reorientation is considered to be the result of the stress caused by the lattice misfit between Au and FePt. The degree of c-axis orientation is significantly enhanced with increasing Au thickness, which is attributed to the decrease of the in-plane lattice and the improved crystal quality of the Au layer. Perpendicular magnetic anisotropy was observed for the FePt samples with the Au buffer layer. The out-of-plane coercivity and remanence ratio are 3.1 kOe and 0.8, respectively, which far exceed the in-plane values.

Abnormal magnetic ordering and ferromagnetism in perovskite ScMnO3 film

Bulk multiferroic ScMnO3 is the stable hexagonal phase, and it is very difficult to prepare its perovskite orthorhombic phase even under high pressure. We fabricated the orthorhombic ScMnO3 thin film by pulsed laser deposition through suitable substrate LaAlO3 and found that nano-scale twin-like domains are naturally formed in the thin film. Magnetic properties of the orthorhombic ScMnO3 thin films show that, besides normal antiferromagnetic ordering at 47 K, an anomalous magnetic transition occurs at 27 K for 60 nm film and at 36 K for 150 nm film only along the c-axis, which is absent in the ab-plane. Moreover, the second magnetic transition for both films is suppressed when the applied field increases from 1 kOe to 10 kOe. In addition, the ferromagnetism shows up in both films at 10 K, and saturation magnetization increases dramatically in 60 nm film compared with 150 nm film. We propose that the second magnetic transition might be more of lattice strain effect and also related to magnetism-induced fer...

Magnetization reversal and coercivity of Fe3Se4 nanowire arrays

The microstructure and magnetic properties of Fe3Se4 nanowire (NW) arrays in anodic aluminum oxide (AAO) porous membrane are studied. Cross-sectional SEM and plane-view TEM images show that the mean wire diameter (dw) and the center-to-center spacing (D) of Fe3Se4 nanowires are about 220 nm and 330 nm, respectively. The field-cooled magnetization dependent on the temperature indicates a Curie temperature around 334 K for the Fe3Se4 nanowires. The coercivities of Fe3Se4 nanowires at 10 K, obtained from the in-plane and out-of-plane hysteresis loops, are as high as 22.4 kOe and 23.3 kOe, which can be understood from the magnetocrystalline anisotropy and the magnetization reversal process.

SIMPLE AND CONVENIENT NONOPTICAL SHEAR FORCE SENSOR FOR SHEAR FORCE AND NEAR-FIELD OPTICAL MICROSCOPES

A simple, compact, and inexpensive method for shear force distance regulation is presented. A single piezoelectric cantilever is employed to both dither a fiber probe and to detect the decrease in piezotension-induced voltage as it approaches the sample surface. On resonance, the large piezotension-induced voltage (∼0.2 mV/nm) allows for simple electronics to be used. It is expected to find application both in shear force microscopy and for shear force distance regulation in near-field optical microscopy.

Thermal test and analysis of concentrator solar cells

Under high concentration the temperature of photovoltaic solar cells is very high. It is well known that the efficiency and performance of photovoltaic solar cells decrease with the increase of temperature. So cooling is indispensable for a concentrator photovoltaic solar cell at high concentration. Usually passive cooling is widely considered in a concentrator system. However, the thermal conduction principle of concentrator solar cells under passive cooling is seldom reported. In this paper, GaInP/GaAs/Ge triple junction solar cells were fabricated using metal organic chemical vapor deposition technique. The thermal conductivity performance of monolithic concentrator GaInP/GaAs/Ge cascade solar cells under 400X concentration with a heat sink were studied by testing the surface and backside temperatures of solar cells. The tested result shows that temperature difference between both sides of the solar cells is about 1K. A theoretical model of the thermal conductivity and thermal resistance of the GaInP/GaAs/Ge triple junction solar cells was built, and the calculation temperature difference between both sides of the solar cells is about 0.724K which is consistent with the result of practical test. Combining the theoretical model and the practical testing with the upper surface temperature of tested 310K, the temperature distribution of the solar cells was researched.

Single orthorhombic b axis orientation and antiferromagnetic ordering type in multiferroic CaMnO3 thin film with La0.67Ca0.33MnO3 buffer layer

The detailed crystal structure and antiferromagnetic properties of a 42 nm thick CaMnO3 film grown on a LaAlO3 substrate with a 9 nm La0.67Ca0.33MnO3 buffer layer have been investigated. Compared with a CaMnO3 film directly grown on a LaAlO3 substrate, only one kind of orthorhombic b axis orientation along the [100] axis of the substrate is observed in the CaMnO3 film with a La0.67Ca0.33MnO3 buffer layer. To determine the antiferromagnetic ordering type of our CaMnO3 film with a buffer layer, the first-principles calculations were carried out with the results, indicating that the CaMnO3 film, even under a tensile strain of 1.9%, is still a compensated G-type antiferromagnetic order, the same as the bulk. Moreover, the exchange bias effect is observed at the interface of the CaMnO3/La0.67Ca0.33MnO3 film, further confirming the antiferromagnetic ordering of the CaMnO3 film with a buffer layer. In addition, it is concluded that the exchange bias effect originates from the spin glass state at the La0.67Ca0.33...