Ying-Rui Lu

Local geometric and electronic structures of gasochromic VOx films

VOx films were deposited by radio-frequency reactive magnetron sputtering from a vanadium target at room temperature. Local atomic and electronic structures of the films were then modified by thermal annealing. The oxidation state and structural and gasochromic properties of the films were elucidated by X-ray absorption spectroscopy. Analytical results indicate that the as-deposited VOx films were amorphous with mixed V(4+) and V(5+) valences. The amorphous VOx had a disordered and expanded lamellar structure resembling that of polymer-intercalated V2O5 gels. VOx films were crystallized into orthorhombic V2O5 at 300 °C, and the lamellar structure was eliminated at 400 °C. Additionally, the gasochromic reaction reduced the vanadium valence via intervalence transitions between V(5+) and V(3+). Moreover, removing the lamellar structure reduced the gasochromic rate, and the gasochromic reaction transformed the V2O5 crystalline phase irreversibly into an H1.43V2O5 phase. Based on the results of this study, amorphous VOx with a lamellar structure is recommended for use in H2 gas sensors.

Mechanism of light emission and electronic properties of a Eu3+-doped Bi2SrTa2O9 system determined by coupled X-ray absorption and emission spectroscopy

The origin of light emission from newly discovered orange-red UV light emitting diodes, and their electronic properties are critical issues yet to be understood. In this study, X-ray absorption spectroscopy (XAS) and emission spectroscopy (XES) are utilized to examine the electronic structure of the Eu3+-doped Bi2SrTa2O9 system. While no significant change in the electronic structure is observed around the Bi and Ta sites, variation around the Eu and Sr atoms is observed, along with even more significant changes in the O 2p states in the conduction band. Upon UV irradiation, Eu-induced states within the conduction band are observed and found to shift to the conduction band minimum upon substitution of Sr with Eu. This phenomenon is the result of the creation by Eu of an excitable state and the fact that Eu is more electronegative than Sr, such that the substitution lowers the Eu 4f5d–O 2p hybridized states. Consequently, the substitution reduces the energy of electron recombination between the valence and conduction bands, which is consistent with the red shift in the photoluminescence spectra. The presence of the newly formed hole states distributed over the O 2p states in the conduction band is strongly correlated with the emission intensity. The results and analyses demonstrate that Eu can be introduced to tailor the Eu–O hybridized states within the conduction band and change the route of recombination, suggesting that Eu is critically involved in light emission in these UV-induced orange-red emitting LED materials.

Mechanism of Electrochemical Deposition and Coloration of Electrochromic V2O5 Nano Thin Films: an In Situ X-Ray Spectroscopy Study.

Electrochromic switching devices have elicited considerable attention because these thin films are among the most promising materials for energy-saving applications. The vanadium oxide system is simple and inexpensive because only a single-layer film of this material is sufficient for coloration. Vanadium dioxide thin films are fabricated by electrochemical deposition and cyclic voltammetry. Chronoamperometric analyses have indicated that the thin V2O5 film demonstrates faster intercalation and deintercalation of lithium ions than those of the thick V2O5 film, benefiting the coloration rate. Despite substantial research on the synthesis of vanadium oxides, the monitoring of electronic and atomic structures during growth and coloration of such material has not been thoroughly examined. In the present study, in situ X-ray absorption spectroscopy (XAS) is employed to determine the electronic and atomic structures of V2O5 thin films during electrochemical growth and then electrochromic coloration. In situ XAS results demonstrate the growth mechanism of the electrodeposited V2O5 thin film and suggest that its electrochromic performance strongly depends on the local atomic structure. This study improves our understanding of the electronic and atomic properties of the vanadium oxide system grown by electrochemical deposition and enhances the design of electrochromic materials for potential energy-saving applications.

Atomic and electronic aspects of the coloration mechanism of gasochromic Pt/Mo-modified V2O5 smart films: an in situ X-ray spectroscopic study

In this work, gasochromic pristine and Mo-modified V2O5 thin films were prepared by the sol-gel spin coating method. Both films exhibit excellent gasochromic coloration. Synchrotron grazing incidence X-ray diffraction reveals that the Mo-modified V2O5 thin film is more amorphous than the pristine V2O5 thin film. X-ray absorption spectroscopy (XAS) was utilized to elucidate the modifications of the local electronic and atomic structures that are caused by Mo. In situ soft-XAS and in situ hard-XAS were performed to monitor the effect of the adsorption of dihydrogen on the charge state of vanadium and local atomic rearrangement in the gasochromic thin films. The gasochromic V2O5 film has a significantly pyramid-like oxygen-coordinated environment. However, the Mo-modified film exhibits mixed pyramid- and octahedral-like structures. Analytic results indicate that upon gasochromic coloration, adsorption of hydrogen adds electrons to the V 3d t2g orbital, lowering the charge state of vanadium. The films undergo structural modification before the valence is changed. The Mo-modified V2O5 film exhibits faster coloration because the apical V-O bond differs from that in the pristine V2O5 film. This in situ XAS allows real-time monitoring of changes in the element-specific local atomic structure during the gasochromic reaction and enables the elucidation of the gasochromic mechanism.

Visible light-induced electronic structure modulation of Nb- and Ta-doped α-Fe2O3 nanorods for effective photoelectrochemical water splitting

The photoelectrochemical (PEC) water splitting activity of Nb and Ta-doped hematite (α-Fe2O3) nanorods was investigated with reference to electronic structures by in situ synchrotron x-ray absorption spectroscopy (XAS). Current density-potential measurements demonstrate that the PEC activity of α-Fe2O3 nanorods depends strongly on the species and concentrations of dopants. The doping of α-Fe2O3 nanorods with a low level of Nb or Ta can improve their electrical conductivity and thereby facilitate charge transport and reduced electron-hole recombination therein. The photoconversion effects of Nb and Ta-doped α-Fe2O3 by in situ XAS in the dark and under illumination revealed opposite evolutions of the spectral intensities of the Fe L-edge and Nb/Ta L-edge, indicating that charge transfer and a conduction pathway are involved in the photoconversion. Analytic in situ XAS results reveal that the α-Fe2O3 that is doped with a low level of Nb has a greater photoconversion efficiency than that doped with Ta because Nb sites are more active than Ta sites in α-Fe2O3. The correlation between PEC activity and the electronic structure of Nb/Ta-doped α-Fe2O3 is examined in detail using in situ XAS and helps to elucidate the mechanism of PEC water splitting in terms of the electronic structure.