Yingrui Sui

Effects of (P, N) dual acceptor doping on band gap and p-type conduction behavior of ZnO films

A reproducible p-type P-N codoped ZnO [ZnO:(P, N)] film with high quality was achieved by magnetron sputtering and post-annealing techniques. It has room-temperature resistivity of 3.98 Ωcm, Hall mobility of 1.35 cm2/Vs, and carrier concentration of 1.16 × 1018 cm−3, which is better than electrical properties of the p-type N-doped ZnO (ZnO:N) and p-type P-doped ZnO (ZnO:P) films. Additionally, the p-ZnO:(P, N)/n-ZnO homojunction showed a clear p-n diode characteristic. The p-type conductivity of ZnO:(P, N) is attributed to the formation of an impurity band above the valance band maximum, resulting in a reduction in the band gap and a decrease in the ionization energy of the acceptor, as well as an improvement in the conductivity and stability of the p-type ZnO:(P, N).

Photocatalytic properties of nano-structured carbon nitride: a comparison with bulk graphitic carbon nitride

Abstract We have synthesised two kinds of graphitic carbon nitride (g-C3N4) through a pyrolysis process involving urea and melamine. The obtained products were characterised by means of X-ray diffraction, scanning electron microscopy, transmission electron microscopy, Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, UV–vis diffuse reflection spectroscopy, and nitrogen adsorption–desorption. The product derived from the urea shows a mesoporous honeycomb-like nanosheet structure (denoted by h-g-C3N4): compared with the bulk product obtained from melamine (denoted by b-g-C3N4), the h-g-C3N4 showed better adsorption and higher photo-activity for rhodamine B (RhB) reduction. The h-g-C3N4 also shows good reusability after cyclic adsorption–regeneration. The present results evinced an efficient design, an eco-friendly and convenient photocatalyst, and a tunable photo-reactivity for use in sustainable light-to-energy conversion.