Yoichi Shiota

Large voltage-induced magnetic anisotropy change in a few atomic layers of iron

In the field of spintronics, researchers have manipulated magnetization using spin-polarized currents. Another option is to use a voltage-induced symmetry change in a ferromagnetic material to cause changes in magnetization or in magnetic anisotropy. However, a significant improvement in efficiency is needed before this approach can be used in memory devices with ultralow power consumption. Here, we show that a relatively small electric field (less than 100 mV nm(-1)) can cause a large change (approximately 40%) in the magnetic anisotropy of a bcc Fe(001)/MgO(001) junction. The effect is tentatively attributed to the change in the relative occupation of 3d orbitals of Fe atoms adjacent to the MgO barrier. Simulations confirm that voltage-controlled magnetization switching in magnetic tunnel junctions is possible using the anisotropy change demonstrated here, which could be of use in the development of low-power logic devices and non-volatile memory cells.

Induction of coherent magnetization switching in a few atomic layers of FeCo using voltage pulses

The magnetization direction of a metallic magnet has generally been controlled by a magnetic field or by spin-current injection into nanosized magnetic cells. Both these methods use an electric current to control the magnetization direction; therefore, they are energy consuming. Magnetization control using an electric field is considered desirable because of its expected ultra-low power consumption and coherent behaviour. Previous experimental approaches towards achieving voltage control of magnetization switching have used single ferromagnetic layers with and without piezoelectric materials, ferromagnetic semiconductors, multiferroic materials, and their hybrid systems. However, the coherent control of magnetization using voltage signals has not thus far been realized. Also, bistable magnetization switching (which is essential in information storage) possesses intrinsic difficulties because an electric field does not break time-reversal symmetry. Here, we demonstrate a coherent precessional magnetization switching using electric field pulses in nanoscale magnetic cells with a few atomic FeCo (001) epitaxial layers adjacent to a MgO barrier. Furthermore, we demonstrate the realization of bistable toggle switching using the coherent precessions. The estimated power consumption for single switching in the ideal equivalent switching circuit can be of the order of 10(4)k(B)T, suggesting a reduction factor of 1/500 when compared with that of the spin-current-injection switching process.

Voltage-induced perpendicular magnetic anisotropy change in magnetic tunnel junctions

A voltage-induced perpendicular magnetic anisotropy change in an ultrathin FeCo layer was observed in an epitaxial magnetic tunnel junction (MTJ) structure. A spin-transfer induced ferromagnetic resonance measurement technique was used under various bias voltage applications to evaluate the anisotropy change. From the peak frequency shifts, we could estimate that a surface magnetic anisotropy change of 15 μJ/m2 was induced by an electric field application of 400 mV/nm in the MTJ with a 0.5 nm thick FeCo layer. The realization of voltage-induced anisotropy changes in an MTJ structure should have a large impact on the development of electric-field driven spintronic devices.

Voltage-Assisted Magnetization Switching in Ultrathin Fe80Co20 Alloy Layers

Growing demands for the voltage-driven spintronic applications with ultralow-power consumption have led to new interest in exploring the voltage-induced magnetization switching in ferromagnetic metals. In this study, we observed a large perpendicular magnetic anisotropy change in Au(001)/ultrathin Fe80Co20(001)/MgO(001)/polyimide/indium tin oxide (ITO) junctions, and succeeded in realizing a clear switching of magnetic easy axis between in-plane and perpendicular directions. Furthermore, employing a perpendicularly magnetized film, voltage-induced magnetization switching in the perpendicular direction under the assistance of magnetic fields was demonstrated. These pioneering results may open a new window of electric-field controlled spintronics devices.

Large change in perpendicular magnetic anisotropy induced by an electric field in FePd ultrathin films

The magnetic properties of FePd ultrathin films and their variation under the influence of an electric field are investigated by magneto-optical Kerr effect (MOKE) measurements. L10-ordered FePd shows a spin reorientation transition when varying the thickness. The easy axis of magnetization is found to be normal to the plane at thicknesses above 9 monolayers (MLs) and in-plane below 9 ML. The coercive field, the perpendicular magnetic anisotropy and the MOKE signal at saturation vary with the applied electric field. The sensitivity of the interface magnetic anisotropy is estimated to be 602 fJ/V m.

Quantitative Evaluation of Voltage-Induced Magnetic Anisotropy Change by Magnetoresistance Measurement

We investigated the voltage-induced perpendicular magnetic anisotropy change in an epitaxial magnetic tunnel junction (MTJ) with an ultrathin FeCo layer. Tunneling magnetoresistance (TMR) curves were measured under various bias voltage applications for different FeCo thicknesses. Clear changes in the shape of TMR curves were observed depending on the voltage-controlled perpendicular magnetic anisotropy. By evaluating the relative angle of two ferromagnetic layers, we could estimate the anisotropy energy change quantitatively. The realization of voltage-induced anisotropy change in the MTJ structure makes it possible to control the magnetization dynamics, leading to a new area of electric-field-based spintronics devices.

Reversible change in the oxidation state and magnetic circular dichroism of Fe driven by an electric field at the FeCo/MgO interface

The influence of an electric field on an ultrathin FeCo film was investigated by x-ray absorption spectroscopy and magnetic circular dichroism. Measurements were done on sub-millimeter sized pillars, with partial fluorescence yield detection. Fe L2,3 absorption spectra revealed that partial oxidation of Fe occurred during the microfabrication. The oxidation state could be reversibly controlled by an electric field, which also induced variations of the dichroic signal. These results show that electrochemical phenomena may influence the magnetism at a ferromagnet/insulator interface.

Opposite signs of voltage-induced perpendicular magnetic anisotropy change in CoFeB|MgO junctions with different underlayers

We report a voltage-induced perpendicular magnetic anisotropy (PMA) change in sputter-deposited Ta|CoFeB|MgO and Ru|CoFeB|MgO junctions. The PMA change is quantitatively evaluated by the field dependence of the tunneling magnetoresistance for various bias voltages. We find that both the sign and amplitude of the voltage effect depend on the underlayer, Ta or Ru, below the CoFeB layer. The rf voltage-induced ferromagnetic resonance spectra also support the underlayer-material-dependent direction of the voltage torque. The present study shows that the underlayer is one of the key parameters for controlling the voltage effect.

Pulse voltage-induced dynamic magnetization switching in magnetic tunneling junctions with high resistance-area product

We investigated pulse voltage-induced dynamic magnetization switchings in magnetic tunneling junctions with a high resistance-area product of 2 kΩ μm2. We found that bistable switching and the oscillatory behavior of switching probability as a function of voltage pulse duration are realized at a lower current density (−1.1 × 105 A/cm2) than in conventional spin-transfer-torque-induced magnetization switching. In addition, the switching probability at different voltage pulse strengths confirmed the existence of a voltage torque induced by a change in perpendicular magnetic anisotropy. This voltage-induced magnetization switching can be a useful technique in future spintronics devices with fast and highly reliable writing processes.

Voltage induced magnetic anisotropy change in ultrathin Fe80Co20/MgO junctions with Brillouin light scattering

We investigate voltage induced perpendicular magnetic anisotropy (PMA) changes in MgO/Cr/Au/Fe80Co20/MgO/polyimide/ indium tin oxide (ITO). In order to observe the PMA change, spin wave frequency was measured by Brillouin light scattering with finite bias voltages applied between Au and ITO electrodes. The obtained PMA constants from spin wave frequency of Fe80Co20 layer show clear bias voltage dependences, which agree well with the previous polar-Kerr effect measurement results and theoretical study. This study suggests spintronics devices operated by an electric field for next generation devices complying with low-power consumption.