Yoji Seki

Preparation of n-ZnO/p-Si Heterojunction by Sol-Gel Process

N-type ZnO thin films with a crack and columnar-free structure were successfully prepared on p-type Si substrates by the sol-gel process. The current-voltage (I-V) characteristics of the heterojunction of n-ZnO/p-Si show a rectification with strong electrical breakdown strength of higher than 107 V/cm. The capacitance-voltage (C-V) characteristics show an approximate linear C-2-V relationship in the reverse bias condition. These results indicate that the ZnO films prepared by the sol-gel process are good enough to be used as a semiconducting material in electrical devices.

Junction Properties and Gap States of ZnO Thin Film Prepared by Sol-Gel Process

N-type ZnO thin films with a crack- and columnar-free structure were successfully prepared on p-type Si substrates by the sol-gel process. The current-voltage (I-V) characteristics of the heterojunction of n-ZnO/p-Si show a rectification, and the capacitance-voltage (C-V) characteristics show an approximately linear C-2-V relationship in the reverse bias condition. In the ZnO thin film, two gap states located at 0.054 eV and 0.12 eV below the conduction band were measured by isothermal capacitance transient spectroscopy (ICTS).

Preparation of TiO2-SnO2 Solid Solution Film by Ion Beam Sputtering

Thin film of rutile-type TiO2-SnO2 solid solution was successfully prepared by reactive ion beam sputtering without postannealing. The crystallinity of the film was highly dependent on the temperature of the substrate. The (101)-oriented film with rutile structure was obtained at substrate temperatures higher than 300°C.

Epitaxial Growth of TiO2-SnO2 Solid Solution Film by Reactive Ion Beam Sputtering

Epitaxial thin film of rutile-type TiO2-SnO2 solid solution has been successfully prepared. The film was fabricated on a sapphire (012) substrate by the reactive ion beam sputtering method using a TiO2-SnO2 ceramic target. The crystallinity of the film was dependent on the substrate temperature. The (101)-oriented film was grown at temperatures higher than 300°C. An epitaxial film was obtained by heat-treatment at temperatures higher than the miscibility gap.

Growth of Bulk GaN Single Crystals by the Pressure-Controlled Solution Growth Method

Growth of Bulk GaN Single Crystals by the Pressure-Controlled Solution Growth Method Takayuki Inoue, Yoji Seki, Osamu Oda et al. Growth of Low Etch Pit Density (EPD) InP Crystals Ryuichi Hirano and Akira Noda Heavily Boron-Doped Silicon Single Crystal Growth: Constitutional Supercooling Toshinori Taishi, Xinming Huang, Masayoshi Kubota et al. Implantation of N Ions on Sapphire Substrate for Improvement of GaN Epilayer Yong Suk Cho, Junggeun Jhin, Young Ju Park et al. Direct Growth of AlN Single Crystal on Sapphire by Solution Growth Method Hiroaki Matsubara, Kohei Mizuno, Yukihisa Takeuchi et al. The growth of insulating crystals J C Brice Reduction of Hollow Defects in 6H-SiC Single Crystals Grown by Sublimation Boule Growth Technique on (1120) 6H-SiC Substrates Taro Nishiguchi, Yasuichi Masuda, Satoru Ohshima et al. Solution Growth Combined with Solvent Evaporation: A Novel Technique in Solution Growth