Yonathan Corredores

Highly tunable microwave stub resonator on ferroelectric KTa0.5Nb0.5O3 thin film

A coplanar waveguide (CPW) stub resonator has been fabricated on a pulsed-laser deposited KTa(0.5)Nb(0.5)O(3) (KTN) thin film (600 nm-thick) onto a r-plane sapphire substrate. It was designed to operate at 10 GHz when the applied bias voltage is zero. We show experimentally that the resonance frequency is shifted by 44% under a 70 kV/cm DC applied electric field. In addition, the dielectric characteristics of the KTN film have been assessed through post-processed measurements of CPW 50-Omega transmission lines using the conformal mapping method.

Structural, Optical, and Dielectric Properties of Bi1.5–xZn0.92–yNb1.5O6.92−δ Thin Films Grown by PLD on R-plane Sapphire and LaAlO3 Substrates

Bi(1.5-x)Zn(0.92-y)Nb(1.5)O(6.92-δ) thin films have the potential to be implemented in microwave devices. This work aims to establish the effect of the substrate and of the grain size on the optical and dielectric properties. Bi(1.5-x)Zn(0.92-y)Nb(1.5)O(6.92-δ) thin films were grown at 700 °C via pulsed-laser deposition on R-plane sapphire and (100)(pc) LaAlO(3) substrates at various oxygen pressures (30, 50, and 70 Pa). The structure, morphology, dielectric and optical properties were investigated. Despite bismuth and zinc deficiencies, with respect to the Bi(1.5)Zn(0.92)Nb(1.5)O(6.92) stoichiometry, the films show the expected cubic pyrochlore structure with a (100) epitaxial-like growth. Different morphologies and related optical and dielectric properties were achieved, depending on the substrate and the oxygen pressure. In contrast to thin films grown on (100)(pc) LaAlO(3), the films deposited on R-plane sapphire are characterized by a graded refractive index along the layer thickness. The refractive index (n) at 630 nm and the relative permittivity (ε(r)) measured at 10 GHz increase with the grain size: on sapphire, n varies from 2.29 to 2.39 and ε(r) varies from 85 to 135, when the grain size increases from 37 nm to 77 nm. On the basis of this trend, visible ellipsometry can be used to probe the characteristics in the microwave range quickly, nondestructively, and at a low cost.

Loss reduction technique in ferroelectric tunable devices by laser micro-etching. Application to a CPW stub resonator in X-band

Ferroelectric materials are known to be lossy at microwaves. A local microetching technique based on laser ablation is implemented here to reduce the insertion loss of highly tunable devices fabricated on KTa1-xNbxO3 (KTN) ferroelectric thin films. The relevance of this approach is studied in X-band by comparing numerically and experimentally the performance of a frequency-tunable coplanar waveguide stub resonator before and after KTN microetching. The experimental data demonstrate a large loss reduction (by a factor 3.3), while keeping a high-frequency tunability (47%) under a moderate biasing static electric field (80 kV/cm). This approach paves the way for the design of ferroelectric reconfigurable devices with attractive performance in X-band and even beyond.