Yong-Ryun Jo

Highly Conductive PEDOT:PSS Nanofibrils Induced by Solution‐Processed Crystallization

The fabrication of electronic devices based on organic materials, known as ’printed electronics’, is an emerging technology due to its unprecedented advantages involving fl exibility, light weight, and portability, which will ultimately lead to future ubiquitous applications. [ 1 ] The solution processability of semiconducting and metallic polymers enables the cost-effective fabrication of optoelectronic devices via high-throughput printing techniques. [ 2 ] These techniques require high-performance fl exible and transparent electrodes (FTEs) fabricated on plastic substrates, but currently, they depend on indium tin oxide (ITO) coated on plastic substrates. However, its intrinsic mechanical brittleness and inferior physical properties arising from lowtemperature ( T ) processing below the melting T of the plastic substrates (i.e., typically below 150 °C) have increased the demand for alternative FTE materials. [ 3 ]

Cryogenic strength improvement by utilizing room-temperature deformation twinning in a partially recrystallized VCrMnFeCoNi high-entropy alloy

The excellent cryogenic tensile properties of the CrMnFeCoNi alloy are generally caused by deformation twinning, which is difficult to achieve at room temperature because of insufficient stress for twinning. Here, we induced twinning at room temperature to improve the cryogenic tensile properties of the CrMnFeCoNi alloy. Considering grain size effects on the critical stress for twinning, twins were readily formed in the coarse microstructure by cold rolling without grain refinement by hot rolling. These twins were retained by partial recrystallization and played an important role in improving strength, allowing yield strengths approaching 1 GPa. The persistent elongation up to 46% as well as the tensile strength of 1.3 GPa are attributed to additional twinning in both recrystallized and non-recrystallization regions. Our results demonstrate that non-recrystallized grains, which are generally avoided in conventional alloys because of their deleterious effect on ductility, can be useful in achieving high-strength high-entropy alloys.

Template-mediated nano-crystallite networks in semiconducting polymers

Unlike typical inorganic semiconductors with a crystal structure, the charge dynamics of π-conjugated polymers (π-CPs) are severely limited by the presence of amorphous portions between the ordered crystalline regions. Thus, the formation of interconnected pathways along crystallites of π-CPs is desired to ensure highly efficient charge transport in printable electronics. Here we report the formation of nano-crystallite networks in π-CP films by employing novel template-mediated crystallization (TMC) via polaron formation and electrostatic interaction. The lateral and vertical charge transport of TMC-treated films increased by two orders of magnitude compared with pristine π-CPs. In particular, because of the unprecedented room temperature and solution-processing advantages of our TMC method, we achieve a field-effect mobility of 0.25 cm(2) V(-1) s(-1) using a plastic substrate, which corresponds to the highest value reported thus far. Because our findings can be applied to various π-conjugated semiconductors, our approach is universal and is expected to yield high-performance printable electronics.

In situ studies of the molecular packing dynamics of bulk-heterojunction solar cells induced by the processing additive 1-chloronaphthalene

Processing additives have been widely utilized for high-performance organic bulk-heterojunction (BHJ) photovoltaic devices. However, the role of processing additives remained unclear due to the limited information relying on the final BHJ film state rather than the intermediate film state during solvent evaporation. Here, by using in situ GIWAXS measurements on the intermediate BHJ film, we propose a possible phase separation mechanism in efficient BHJ solar cells consisting of a narrow band gap polymer (P1) and PC71BM via the use of 1-chloronaphthalene (1-CN) as a processing additive. We found that adding small amounts of an additive, 1-CN, with a high boiling point and a high PC71BM solubility can prolong the solvent evaporation time and dissolve many PC71BM molecules, promoting the strong P1 polymer:solvent and PC71BM:solvent interaction to produce pure domains of each component. Thus, the bi-continuous networks for both P1 and PC71BM and their enlarged interfacial area are well fabricated in the BHJ films, inducing balanced photo-charge carrier densities for the electrons and holes and improving the overall photovoltaic performance. Therefore, our findings elucidate the kinetic motions of two organic phases affected by the physical properties of the solvents in the process of film formation and establish criteria for BHJ systems.

Organic Single‐Crystal Semiconductor Films on a Millimeter Domain Scale

Nucleation and growth processes can be effectively controlled in organic semiconductor films through a new concept of template-mediated molecular crystal seeds during the phase transition; the effective control of these processes ensures millimeter-scale crystal domains, as well as the performance of the resulting organic films with intrinsic hole mobility of 18 cm(2) V(-1) s(-1).

Directly-Grown and Square-Patterned Arrays of Metal Oxide Nanowires for High-Performance Catalyst Support Platforms

This research reports novel and efficient electrocatalyst support systems. Tin dioxide nanowires grown directly on current collecting substances are introduced as high-performance support platforms. For this propose, palladium or platinum catalysts are impregnated on these nanowire scaffolds and exhibit improved electrocatalytic performance for methanol oxidation in alkaline and acidic environments. These nanowire support platforms could be demonstrated to maximize the electrocatalytic activity because of the effective charge transport provided by the direct connection between the nanowire supports and current collectors. More significantly, grid-patterned nanowire arrays grown directly on current collectors are, for the first time, demonstrated as a milestone to enhance the electrocatalytic performance. The empty space between the patterned nanowire arrays acts as a channel to facilitate the electrolyte diffusion. The metal catalysts incorporated into the patterned nanowire supports show an 8-fold improvement in the catalytic performance for methanol electrooxidation, most likely because of the synergetic effects of the enhanced charge transport and mass transfer attributed to the structural advantages of the patterned nanowire array supports.

Close-packed polymer crystals from two-monomer-connected precursors

The design of crystalline polymers is intellectually stimulating and synthetically challenging, especially when the polymerization of any monomer occurs in a linear dimension. Such linear growth often leads to entropically driven chain entanglements and thus is detrimental to attempts to realize the full potential of conjugated molecular structures. Here we report the polymerization of two-monomer-connected precursors (TMCPs) in which two pyrrole units are linked through a connector, yielding highly crystalline polymers. The simultaneous growth of the TMCP results in a close-packed crystal in polypyrrole (PPy) at the molecular scale with either a hexagonal close-packed or face-centred cubic structure, as confirmed by high-voltage electron microscopy, and the structure that formed could be controlled by simply changing the connector. The electrical conductivity of the TMCP-based PPy is almost 35 times that of single-monomer-based PPy, demonstrating its promise for application in diverse fields.

Formation mechanism of thermally optimized Ga-doped MgZnO transparent conducting electrodes for GaN-based light-emitting diodes

AbstractWe report a highly transparent conducting electrode (TCE) scheme of MgxZn1-xO:Ga/Au/NiOx which was deposited on p-GaN by e-beam for GaN-based light emitting diodes (LEDs). The optical and electrical properties of the electrode were optimized by thermal annealing at 500°C for 1 minute in N2 + O2 (5:3) ambient. The light transmittance at the optimal condition increased up to 84–97% from the UV-A to yellow region. The specific contact resistance decreased to 4.3(±0.3) × 10-5 Ωcm2. The improved properties of the electrode were attributed to the directionally elongated crystalline nanostructures formed in the MgxZn1-xO:Ga layer which is compositionally uniform. Interestingly, the Au alloy nano-clusters created in the MgxZn1-xO:Ga layer during annealing at 500°C may also enhance the properties of the electrode by acting as a conducting bridge and a nano-sized mirror. Based on studies of the external quantum efficiency of blue LED devices, the proposed electrode scheme combined with an optimized annealing treatment suggests a potential alternative to ITO.

Crystal-Structure-Dependent Piezotronic and Piezo-Phototronic Effects of ZnO/ZnS Core/Shell Nanowires for Enhanced Electrical Transport and Photosensing Performance

We report the crystal-structure-dependent piezotronic and piezo-phototronic effects of ZnO/ZnS core/shell nanowires (CS NWs) having different shell layer crystalline structures. The wurtzite (WZ) ZnO/WZ ZnS CS NWs showed higher electrical transport and photosensing properties under external strain than the WZ ZnO/zinc blende (ZB) ZnS CS NWs. The WZ ZnO/WZ ZnS CS NWs under a compressive strain of -0.24% showed 4.4 and 8.67 times larger increase in the output current (1.93 × 10-4 A) and photoresponsivity (8.76 × 10-1 A/W) than those under no strain. However, the WZ ZnO/ZB ZnS CS NWs under the same strain condition showed 3.2 and 2.16 times larger increase in the output current (1.13 × 10-4 A) and photoresponsivity (2.16 × 10-1 A/W) than those under no strain. This improvement is ascribed to strain-induced piezopolarization charges at both the WZ ZnO NWs and the grains of the WZ ZnS shell layer in WZ ZnO/WZ ZnS CS NWs, whereas piezopolarization charges are induced only in the ZnO core region of the WZ ZnO/ZB ZnS CS NWs. These charges can change the type-II band alignment in the ZnO and ZnS interfacial region as well as the Schottky barrier height at the junction between the semiconductor and the metal, thus facilitating electrical transport and reducing the recombination probability of charge carriers under UV irradiation.

Observation and tunability of room temperature photoluminescence of GaAs/GaInAs core-multiple-quantum-well shell nanowire structure grown on Si (100) by molecular beam epitaxy

We report the observation of room temperature photoluminescence (PL) emission from GaAs/GaInAs core-multiple-quantum-well (MQW) shell nanowires (NWs) surrounded by AlGaAs grown by molecular beam epitaxy (MBE) using a self-catalyzed technique. PL spectra of the sample show two PL peaks, originating from the GaAs core NWs and the GaInAs MQW shells. The PL peak from the shell structure red-shifts with increasing well width, and the peak position can be tuned by adjusting the width of the MQW shell. The GaAs/GaInAs core-MQW shell NW surrounded by AlGaAs also shows an enhanced PL intensity due to the improved carrier confinement owing to the presence of an AlGaAs clad layer. The inclined growth of the GaAs NWs produces a core-MQW shell structure having a different PL peak position than that of planar QWs. The PL emission by MQW shell and the ability to tune the PL peak position by varying the shell width make such core-shell NWs highly attractive for realizing next generation ultrasmall light sources and other optoelectronics devices.PACS81.07.Gf; 81.15.Hi; 78.55.Cr