Yong Wan Jin

High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

Unlike graphene, the existence of bandgaps (1-2 eV) in the layered semiconductor molybdenum disulphide, combined with mobility enhancement by dielectric engineering, offers an attractive possibility of using single-layer molybdenum disulphide field-effect transistors in low-power switching devices. However, the complicated process of fabricating single-layer molybdenum disulphide with an additional high-k dielectric layer may significantly limit its compatibility with commercial fabrication. Here we show the first comprehensive investigation of process-friendly multilayer molybdenum disulphide field-effect transistors to demonstrate a compelling case for their applications in thin-film transistors. Our multilayer molybdenum disulphide field-effect transistors exhibited high mobilities (>100 cm(2) V(-1) s(-1)), near-ideal subthreshold swings (~70 mV per decade) and robust current saturation over a large voltage window. With simulations based on Shockleys long-channel transistor model and calculations of scattering mechanisms, these results provide potentially important implications in the fabrication of high-resolution large-area displays and further scientific investigation of various physical properties expected in other layered semiconductors.

Self-Sorted, Aligned Nanotube Networks for Thin-Film Transistors

To find use in electronics, single-walled carbon nanotubes need to be efficiently separated by electronic type and aligned to ensure optimal and reproducible electronic properties. We report the fabrication of single-walled carbon nanotube (SWNT) network field-effect transistors, deposited from solution, possessing controllable topology and an on/off ratio as high as 900,000. The spin-assisted alignment and density of the SWNTs are tuned by different surfaces that effectively vary the degree of interaction with surface functionalities in the device channel. This leads to a self-sorted SWNT network in which nanotube chirality separation and simultaneous control of density and alignment occur in one step during device fabrication. Micro-Raman experiments corroborate device results as a function of surface chemistry, indicating enrichment of the specific SWNT electronic type absorbed onto the modified dielectric.

Control of Electronic Structure of Graphene by Various Dopants and Their Effects on a Nanogenerator

It is essential to control the electronic structure of graphene in order to apply graphene films for use in electrodes. We have introduced chemical dopants that modulate the electronic properties of few-layer graphene films synthesized by chemical vapor deposition. The work function, sheet carrier density, mobility, and sheet resistance of these films were systematically modulated by the reduction potential values of dopants. We further demonstrated that the power generation of a nanogenerator was strongly influenced by the choice of a graphene electrode with a modified work function. The off-current was well quenched in graphene films with high work functions (Au-doped) due to the formation of high Schottky barrier heights, whereas leakage current was observed in graphene films with low work functions (viologen-doped), due to nearly ohmic contact.

Solution-processed, high-performance n-channel organic microwire transistors

The development of solution-processable, high-performance n-channel organic semiconductors is crucial to realizing low-cost, all-organic complementary circuits. Single-crystalline organic semiconductor nano/microwires (NWs/MWs) have great potential as active materials in solution-formed high-performance transistors. However, the technology to integrate these elements into functional networks with controlled alignment and density lags far behind their inorganic counterparts. Here, we report a solution-processing approach to achieve high-performance air-stable n-channel organic transistors (the field-effect mobility (μ) up to 0.24 cm2/Vs for MW networks) comprising high mobility, solution-synthesized single-crystalline organic semiconducting MWs (μ as high as 1.4 cm2/Vs for individual MWs) and a filtration-and-transfer (FAT) alignment method. The FAT method enables facile control over both alignment and density of MWs. Our approach presents a route toward solution-processed, high-performance organic transistors and could be used for directed assembly of various functional organic and inorganic NWs/MWs.

Lyotropic Liquid-Crystalline Solutions of High-Concentration Dispersions of Single-Walled Carbon Nanotubes with Conjugated Polymers†

The 1D structure of single-walled carbon nanotubes (SWNTs) leads to unique physical properties, which have been investigated extensively. Numerous applications and device prototypes have been demonstrated; however, most have used SWNTs grown in situ by chemical vapor deposition. This limits throughput and choice of substrate owing to the high growth temperatures involved. Solution-based postsynthesis device fabrication, typically involving purification, solubilization, chemical functionalization, cutting, and/ or controlled assembly of SWNTs, is more desirable because of low cost, scalability to large areas, and compatibility with flexible plastic substrates. Unfortunately, SWNTs are not readily soluble, and chemical functionalization strategies for their solubilization usually alter their electronic properties. Furthermore, to take full advantage of the anisotropic charge-transport properties of SWNTs and to enhance their performance in high-strength composite materials, it is necessary to align them over a large area. Noncovalent functionalization of SWNTs is a particularly attractive avenue for dispersion because it enables modification of material properties without altering the chemical structure of the nanotubes. To date, most high-concentration dispersions (>1mg mL ) have been obtained in aqueous solutions by mixing SWNTs with surfactants, doubleor

Low dark current small molecule organic photodetectors with selective response to green light

We report green-sensitive organic photodetectors consisting of a bulk heterojunction blend of N,N-dimethylquinacridone and dicyanovinyl-terthiophene. Devices incorporating a triphenylamine derivative-based electron blocking layer and a molybdenum oxide hole extracting layer lead to significantly low dark currents (Jd) ∼ 6.41 nA/cm2 at −3 V and high external quantum efficiency of 55.2% at 540 nm wavelength with a narrow full width at half maximum of 146 nm, which is likely to be applicable for full colour organic image sensors. Based on the interfacial energy barrier and temperature dependent current-voltage characteristics, possible origins of the reverse Jd of devices are further described.

Reliable and Uniform Thin‐Film Transistor Arrays Based on Inkjet‐Printed Polymer Semiconductors for Full Color Reflective Displays

Stable uniform performance inkjet-printed polymer transistor arrays, which allow demonstration of flexible full-color displays, were achieved by new ambient processable conjugated copolymer semiconductor, and OTFT devices incorporating this material showed high mobility values>1.0 cm2 V(-1) s(-1). Bias-stress stability of the devices was improved with a channel-passivation layer, which suppresses the density of trap states at the channel interface.

Improved emission stability of single-walled carbon nanotube field emitters by plasma treatment

We investigated the effect of plasma treatment on single-walled carbon nanotube (SWCNT) field emitters, which were fabricated by printing a photoimageable SWCNT paste, to improve emission lifetime. The treatment was performed by applying a dc pulsed voltage between two electrodes, where the cathode was the SWCNT emitter to be treated and the anode was a bare indium-doped tin oxide glass, under inert gas (Xe∕Ne) atmosphere. With increasing applied voltage and treatment time, the stability of the emission current at a constant electric field is improved, while the field to reach a required emission current becomes high. We attribute the improved emission stability to the removal of a small portion of protruding emitters, which dominate initial emission characteristics. The elimination of small number of prominent emitters allows a greater number of emitters to be active on emission with a compensation for higher electric-field application. We expect that the plasma treatment introduced in this letter will p...

Green-sensitive organic photodetectors with high sensitivity and spectral selectivity using subphthalocyanine derivatives.

Green-sensitive organic photodetectors (OPDs) with high sensitivity and spectral selectivity using boron subphthalocyanine chloride (SubPc) derivatives are reported. The OPDs composed of SubPc and dicyanovinyl terthiophene derivative (DCV3T) demonstrated the highest green-sensitivity with maximum external quantum efficiency (EQE) of 62.6 % at an applied voltage of -5 V, but wide full-width-at-half-maximum (FWHM) of 211 nm. The optimized performance considering spectral selectivity was achieved from the composition of N,N-dimethyl quinacridone (DMQA) and SubPc showing the high specific detectivity (D*) of 2.34 × 10(12) cm Hz(1/2)/W, the EQE value of 60.1% at -5 V, and narrow FWHM of 131 nm. In spite of the sharp absorption property of SubPc with the maximum wavelength (λmax) at 586 nm, the EQE spectrum showed favorable green-sensitivity characterized by smooth waveform with λmax at 560 nm, which is induced from the high reflectance of SubPc centered at 605 nm. The photoresponsivity of the OPD devices was found to be consistent with their absorptance. Optimized DMQA/SubPc device showed the lowest value of blue crosstalk (0.42) and moderate red crosstalk (0.37), suggesting its promising application as a green-sensitive OPD.

Carbon nanotube field emitter arrays having an electron beam focusing structure

An electron beam focusing structure was incorporated into the gated field emitter arrays where the emitters were screen-printed carbon nanotubes. The focusing structure was comprised of 8-μm-thick bulky SiOx focus gate insulator and Cr focus gate, and exhibited negligible leakage between the gate and the focus gate. In current–voltage measurements, it is found that the anode current strongly depends on both the focus gate and the anode bias voltages. Electron beams were focused well at the anode with a slight overfocusing effect, which is due to the wide electron beam divergence from carbon nanotubes. A new focusing structure based on the simulation is proposed to overcome the overfocusing.