Yoonhyun Kim

Mechanical properties of hexagonal boron nitride synthesized from film of Cu/BN mixture by surface segregation

Hexagonal boron nitride (h-BN) has a low friction coefficient and weak surface attractive force similar to graphite. Furthermore, while graphite is conductive, BN is a good insulator. These properties make it suitable for application like lubricating coating or as an insulator/buffer layer in electronic devices. The synthesize of h-BN layer by surface segregation phenomena and mechanical properties of the h-BN surface segregated on Cu substrate have been investigated. During in situ annealing, the surface segregation of BN occurred on Cu/BN film deposited by deposition process with a rf magnetron co-sputtering system. Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) analysis showed that though the h-BN layer synthesized was not covered whole area of substrate but the h-BN layers partially covered substrate. And the concentration of oxygen on the surface after exposure in air is decreased with increase of BN concentration. The topography of atomic forces microscopy (AFM) showed that h-BN phases surface segregated are discontinuous droplet shape. The force curves of AFM and friction force of lateral force microscopy (LFM) showed that the h-BN droplet surface segregated have very weak attractive force and low friction coefficient equal to h-BN sintered plate.

Hybrid copper complex-derived conductive patterns printed on polyimide substrates

We synthesized new copper complexes that can be readily converted into highly conductive Cu film. Mechanochemical milling of copper (I) oxide suspended in formic acid resulted in the submicron-sized Cu formate together Cu nanoparticles. The submicrometer-sized Cu formates are reactive toward inter-particle sintering and metallic Cu seeds present in the Cu complexes assist their decomposition and the nucleation of Cu. The hybrid copper complex film printed on polyimide substrate is decomposed into dense and uniform Cu layer after annealing at 250 °C for 30 min under nitrogen atmosphere. The resulting Cu film exhibited a low resistivity of 8.2 μΩ·cm and good adhesion characteristics.