Yoshihiro Miyazawa

A novel bipolar device with low emitter impurity concentration structure

A novel high performance passivated bipolar device has been developed. The structure of this device, called here a “LEC structure” is characterized by low emitter impurity concentration and electrical impurity concentration and electrical barrier in the emitter, which causes superior device performance and productivity. The experimental results agreed with proposed model, and technology of this device were compared with conventional double diffused transistor.

Small geometry SOI CMOS cell technology for high density SRAMs

Summary form only given. The authors report on a full CMOS 4 M SRAM (static RAM) cell using bonded SOI (silicon-on-insulator). The cell area is 21.15 mu m/sup 2/ and the chip area is 129.9 mm/sup 2/. The cell layout is shown, and the cell transfer curves at a Vdd of 1.5 V and 3.3 V are presented. A sufficient noise margin is achieved even at a Vdd of 1.5 V, which is specific to CMOS cells.<<ETX>>