Yoshikazu Ikegami

Experimental Study of Beam Steering in 980-nm InGaP Cladding Lasers

The beam steering phenomenon was directly observed by means of backplane electroluminescence in 980 nm InGaP cladding power lasers. The electroluminescence of the lasers which showed lateral beam steering had a periodic pattern along the active region, which was assumed to be due to spatial hole burning. The period of this pattern was roughly estimated using the effective refractive index method. A laser satisfying the cut-off condition for higher lateral modes did not exhibit a periodic pattern of electroluminescence.

1.1μm single mode VCSEL-based 4-channel × 10-Gbit/s parallel-optical module

For the first time, we fabricated a 1.1 μm InGaAs/GaAs single mode VCSEL-array-based 4-channel x 10-Gbit/s parallel-optical module integrated with a driver IC. The module achieved error free 10Gbit/s transmission for the distance of > 1km.

Circular beam 980nm strained quantum well lasers

InGaAs strained quantum well lasers on GaAs substrates emitting at 980nm are of great interests for the pumping sources of erbium doped optical fiber amplifiers (EDFA). In the previous report, we have demonstrated aluminium free 980nm InGaAs strained quantum well lasers for the first time [1]. The advantage of this system is high endurance to the surface oxidation under fabrication process, high power operation, to name a few. To make good use of this advantage, it is expected long term reliability for practical use, which was confirmed by the high temperature aging tests of aluminum free lasers with no facet coating [2,3].