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Yoshikazu Nishimura

NEC

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Publication

Featured researches published by Yoshikazu Nishimura.

Archive | 1998

Semiconductor device having lead terminals bent in J-shape

Seiji Ichikawa; Takeshi Umemoto; Toshiaki Nishibe; Kazunari Sato; Kunihiko Tsubota; Masato Suga; Yoshikazu Nishimura; Keita Okahira; Tatsuya Miya; Toru Kitakoga

Archive | 1998

Plastic-encapsulated semiconductor device and fabrication method thereof

Seiji Ichikawa; Takeshi Umemoto; Toshiaki Nishibe; Kazunari Sato; Kunihiko Tubota; Masato Suga; Yoshikazu Nishimura; Keita Okahira; Tatsuya Miya; Tooru Kitakoga

Archive | 1998

Semiconductor device having pellet mounted on radiating plate thereof

Seiji Ichikawa; Takeshi Umemoto; Toshiaki Nishibe; Kazunari Sato; Kunihiko Tsubota; Masato Suga; Yoshikazu Nishimura; Keita Okahira; Tatsuya Miya; Toru Kitakoga

Archive | 1998

Semiconductor device with radiation plate for high radiation character and method of manufacturing the same

Seiji Ichikawa; Takeshi Umemoto; Kazunari Sato; Kunihiko Tsubota; Yoshikazu Nishimura; Toshiaki Nishibe; Masato Suga; Toru Kitakoga; Tatsuya Miya; Keita Okahira

Archive | 1998

Method of manufacturing a semiconductor device with a pair of radiating terminals and a plurality of lead terminals formed from a single lead frame

Seiji Ichikawa; Takeshi Umemoto; Toshiaki Nishibe; Kazunari Sato; Kunihiko Tsubota; Masato Suga; Yoshikazu Nishimura; Keita Okahira; Tatsuya Miya; Toru Kitakoga

Archive | 1998

Verfahren zur Herstellung einer Halbleitervorrichtung mit einem Paar Strahlungsanschlüssen und einer Vielfalt von Außenverbindungen, die aus einem einzelnen Leiterrahmen geformt sind A process for producing a semiconductor device having a pair of terminals radiation and a variety of external connections which are formed from a single lead frame

Seiji Ichikawa; Toru Kitakoga; Tatsuya Miya; Toshiaki Nishibe; Yoshikazu Nishimura; Keita Okahira; Kazunari Sato; Masato Suga; Kunihiko Tsubota; Takeshi Umemoto

Archive | 1998

Semiconductor device mounted on radiating element

Seiji Ichikawa; Takeshi Umemoto; Toshiaki Nishibe; Kazunari Sato; Kunihiko Tsubota; Masato Suga; Yoshikazu Nishimura; Keita Okahira; Tatsuya Miya; Toru Kitakoga

Archive | 1998

Herstellungsverfahren einer Halbleitervorrichtung mit einem Paar Strahlungsabschlüssen und einer Vielfalt von Aussenverbindungen die aus einem einzelnen Leiterrahmen geformt sind Manufacturing method of a semiconductor device with a pair of radiation degrees and a variety of external connections which are formed from a single lead frame

Seiji Ichikawa; Takeshi Umemoto; Toshiaki Nishibe; Kazunari Sato; Kunihiko Tsubota; Masato Suga; Yoshikazu Nishimura; Keita Okahira; Tatsuya Miya; Toru Kitakoga

Archive | 1998

Halbleitervorrichtung mit auf Abstrahlplatte montiertem Element

Seiji Ichikawa; Takeshi Umemoto; Toshiaki Nishibe; Kazunari Sato; Kunihiko Tsubota; Masato Suga; Yoshikazu Nishimura; Keita Okahira; Tatsuya Miya; Toru Kitakoga

Archive | 1998

Semiconductor device mounted on a radiation plate pellet

Seiji Ichikawa; Toru Kitakoga; Tatsuya Miya; Toshiaki Nishibe; Yoshikazu Nishimura; Keita Okahira; Kazunari Sato; Masato Suga; Kunihiko Tsubota; Takeshi Umemoto

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Collaboration

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Kazunari Sato

NEC

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Keita Okahira

NEC

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Masato Suga

NEC

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Seiji Ichikawa

NEC

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Takeshi Umemoto

NEC

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Tatsuya Miya

NEC

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Toshiaki Nishibe

NEC

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Kunihiko Tsubota

NEC

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Toru Kitakoga

NEC

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Kunihiko Tubota

NEC

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