Yoshiki Saito

m-Plane GaInN Light Emitting Diodes Grown on Patterned a-Plane Sapphire Substrates

The fabrication of a blue m-plane GaInN light emitting diode (LED) grown on an m-plane GaN layer grown on a 3-in. patterned sapphire substrate is reported. The output power of the LED was approximately 3 mW at the wavelength of 461 nm, a driving current of 20 mA, and a forward voltage of 3.5 V. This is the first report of nonpolar or semipolar blue LEDs grown on hetero-substrates with milliwatt scale output power.

m-Plane GaN Films Grown on Patterned a-Plane Sapphire Substrates with 3-inch Diameter

Nonpolar m-plane GaN films have been grown by metalorganic vapor-phase epitaxy on patterned a-plane sapphire substrates (diameter: 3 in.) without dielectric masks made of materials such as SiO2. The m-plane GaN layer had a smooth and transparent surface over the entire area of the substrate. Furthermore, the epitaxial relationships between the m-plane GaN film and the patterned a-plane sapphire substrate were as follows: [0001]GaN∥[0001]Sapphire and [1120]GaN∥[1010]Sapphire. The full width at half maximum values of the X-ray rocking curves for (1010) GaN along [1120]GaN and [0001]GaN were found to be 396 and 565 arcsec, respectively.