Yoshimi Shirakawa

ANNEALING BEHAVIOR AND ATOMIC COMPOSITION OF SUBSTITUTIONAL CARBON-OXYGEN COMPLEXES IN SILICON CRYSTALS

We investigated the annealing behavior of the infrared‐absorption peaks at 1052 and 1099 cm−1 due to C–OB complex, and those at 1112 and 1026 cm−1 due to C–OC complex. Similar to previous observations [Y. Shirakawa, H. Yamada‐Kaneta, and H. Mori, J. Appl. Phys. 77, 41 (1995)], the formation‐dissociation reaction of C–OB and C–OC complexes rapidly reaches the quasithermal‐equilibrium state at the onset of annealing. Based upon the mass action law, it is suggested that the formation of the C–OB and C–OC complexes involves one carbon atom and two and three oxygen atoms, respectively.

Annealing behavior of carbon‐oxygen complexes in silicon crystals observed by low‐temperature infrared absorption

A low‐temperature infrared‐absorption study has been performed to investigate the annealing behavior of the carbon‐oxygen complexes causing the peaks at 1104 cm−1 (C‐OA complex) and 1108 cm−1 (C‐OD complex). Upon annealing, the concentrations of the C‐OA and C‐OD complexes quickly reach the quasithermal‐equilibrium values described by the mass‐action law. The obtained formulas of this mass‐action law indicate that both of these two complexes involve a carbon atom and an oxygen atom. For the annealing temperatures higher than 800 °C, the quasithermal‐equilibrium concentration of the C‐OA complex increases with increasing temperature. A hypothetical explanation is proposed for this unusual temperature dependence.