Yoshio Miyai
Sanyo
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Publication
Featured researches published by Yoshio Miyai.
international symposium on semiconductor manufacturing | 2007
Tatsuhiko Koide; Ryuichi Sugie; Yoshikazu Ibara; Yoshio Miyai
A new in-line monitoring method to easily and quickly detect dislocations and defects generated before and after the SiGe epitaxial process is storongly needed. We focus on the cathodoluminescence (CL) method which can directly observe regions within devices and determine dislocations and defects in Si/SiGe/Si double hetero-structures. We systematically investigate the correlation between CL spectra and epitaxial process parameters and demonstrate that CL measurements can detect dislocations and defects that could not be observed by light point defect (LPD) detection or transmission electron microscopy (TEM). The results of evaluation experiments for the proposed CL method indicate that it is effective for the SiGe epitaxial process control.
Archive | 2001
Isao Hasegawa; Yoshio Miyai; Naoya Sotani
Archive | 2003
Naoya Sotani; Koji Suzuki; Yoshio Miyai
The transactions of the Institute of Electronics, Information and Communication Engineers. C | 2001
Hiroki Hamada; Hisashi Abe; Yoshio Miyai
Archive | 2003
Naoya Sotani; Koji Suzuki; Yoshio Miyai
Materials Transactions | 2001
Naoto Matsuo; Tomoyuki Nouda; Naoya Kawamoto; Ryouhei Taguchi; Yoshio Miyai; Hiroki Hamada
Materials Transactions | 2001
Naoto Matsuo; Hisashi Abe; Naoya Kawamoto; Yoshio Miyai; Hiroki Hamada
Archive | 2009
Naoya Sogae; Koji Suzuki; Yoshio Miyai
Archive | 2007
Tatsuhiko Koide; Ryuichi Sugie; Yoshikazu Ibara; Yoshio Miyai
Rapid Thermal Processing for Future Semiconductor Devices | 2003
Hiroki Hamada; Hisashi Abe; Yoshio Miyai
