Yoshishige Tsuchiya

Charge injection and trapping in silicon nanocrystals

The temperature dependence of the conduction mechanism in thin films of ∼8nm diameter silicon nanocrystals is investigated using Al∕Sinanocrystal∕p‐Si∕Al diodes. A film thickness of 300 nm is used. From 300 to 200 K, space charge limited current, in the presence of an exponential distribution of trapping states, dominates the conduction mechanism. Using this model, a trap density Nt=2.3×1017cm−3 and a characteristic trap temperature Tt=1670K can be extracted. The trap density is within an order of magnitude of the nanocrystal number density, suggesting that most nanocrystals trap single or a few carriers at most.

Electronic state of vortices in YBa 2 Cu 3 O y investigated by complex surface impedance measurements

The electromagnetic response to microwaves in the mixed state of

Nanoelectromechanical nonvolatile memory device incorporating nanocrystalline Si dots

{\mathrm{YBa}}_{2}{\mathrm{Cu}}_{3}{\mathrm{O}}_{y}

Hopping conduction in size-controlled Si nanocrystals

(YBCO) was measured in order to investigate the electronic state inside and outside the vortex core. The magnetic-field dependence of the complex surface impedance at low temperatures was in good agreement with a general vortex dynamics description assuming that the field-independent viscous damping force and the linear restoring force were acting on the vortices. In other words, both real and imaginary parts of the complex resistivity,

Influence of nanocrystal size on the transport properties of Si nanocrystals

{\ensuremath{\rho}}_{1},

Visible Electroluminescence from Spherical-Shaped Silicon Nanocrystals

and

Vapor--Liquid--Solid Growth of Small- and Uniform-Diameter Silicon Nanowires at Low Temperature from Si2H6

{\ensuremath{\rho}}_{2},

Integration of Tunnel-Coupled Double Nanocrystalline Silicon Quantum Dots with a Multiple-Gate Single-Electron Transistor

were linear in B. This is explained by theories for d-wave superconductors. Using analysis based on the Coffey-Clem description of the complex penetration depth, we estimated that the vortex viscosity \ensuremath{\eta} at 10 K was

Three-Dimensional Numerical Analysis of Switching Properties of High-Speed and Nonvolatile Nanoelectromechanical Memory

(4\char21{}5)\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}7}{\mathrm{N}\mathrm{s}/\mathrm{m}}^{2}.

Control of electrostatic coupling observed for silicon double quantum dot structures

This value corresponds to