Yoshiyuki Sakai

High Performance SiC IEMOSFET/SBD Module

SiC power module with low loss and high reliability was developed by utilizing IEMOSFET and SBD. The IEMOSFET is the SiC MOSFET with high channel mobility in which the channel region is the p-type carbon-face epitaxial layer with low acceptor concentration. Elemental technologies for the high channel mobility and the high reliability of the gate oxide have been developed to realize the excellent characteristics by the IEMOSFET. The SBD was designed so as to minimize the forward voltage drops and the reverse leakage current. For the fabrication of these SiC power devices, the mass production technology such as gate oxidation, ion implantation and following activation annealing have been also developed.

Low Cost Ion Implantation Process with High Heat Resistant Photoresist in Silicon Carbide Device Fabrication

Cost of silicon carbide (SiC) wafer has been improved owing to the development of larger and higher quality wafer technologies, while the process stays long and complicated. In this paper, we propose a novel short process of ion implantation and provide the fabrication model SiC schottky barrier diodes (SiC-SBDs) devices. Currently common mask layer of ion implantation employs high heat resistant materials such as metal oxides. Because the ion is implanted to SiC wafer at high temperature between 300 °C and 800 °C due to avoid the damage of SiC crystal structure. The process using oxide layer tends to became long and complicated. On the other hand, our proposal process uses a heat resistant photoresist material as the mask instead of the oxide layer. The heat resistant photoresist is applied to newly developed SP-D1000 produced by Toray Industries, Inc.. We demonstrated to fabricate model SiC-SBDs devices based on our proposal process with SP-D1000 and confirmed the device working as same as a current process.