Young-Chul Leem

High-performance photoconductivity and electrical transport of ZnO/ZnS core/shell nanowires for multifunctional nanodevice applications.

We report the electrical and optical properties of ZnO/ZnS core/shell nanowire (NW) devices. The spatial separation of charge carriers due to their type II band structure together with passivation effect on ZnO/ZnS core/shell NWs not only enhanced their charge carrier transport characteristics by confining the electrons and reducing surface states in the ZnO channel but also increased the photocurrent under ultraviolet (UV) illumination by reducing the recombination probability of the photogenerated charge carriers. Here the efficacy of the type-II band structure and the passivation effect are demonstrated by showing the enhanced subthreshold swing (150 mV/decade) and mobility (17.2 cm2/(Vs)) of the electrical properties, as well as the high responsivity (4.4×10(6) A/W) in the optical properties of the ZnO/ZnS core/shell NWs, compared with the subthreshold swing (464 mV/decade), mobility (8.9 cm2/(Vs)) and responsivity (2.5×10(6) A/W) of ZnO NWs.

Improved Light Extraction Efficiency in Blue Light-Emitting Diodes by SiO2-Coated ZnO Nanorod Arrays

We report on the improved light extraction efficiency of blue light-emitting diodes (LEDs) by SiO2-coated ZnO nanorods (NRs) grown on indium–tin oxide (ITO). The optical output power of the LEDs with SiO2-coated ZnO NRs, which are grown on the patterned sapphire substrates, increases by 5% at 20 mA, compared with that of LEDs with bare ZnO NRs. This increase is attributed to the improved light extraction efficiency of LEDs because the SiO2 layer with a refractive index lower than that of ZnO NRs further reduces the Fresnel reflection.

Light‐Emitting Diodes with Hierarchical and Multifunctional Surface Structures for High Light Extraction and an Antifouling Effect

Bioinspired hierarchical structures on the surface of vertical light-emitting diodes (VLEDs) are demonstrated by combining a self-assembled dip-coating process and nanopatterning transfer method using thermal release tape. This versatile surface structure can efficiently reduce the total internal reflection and add functions, such as superhydrophobicity and high oleophobicity, to achieve an antifouling effect for VLEDs.

Vertically stacked color tunable light-emitting diodes fabricated using wafer bonding and transfer printing.

We report on the vertically stacked color tunable light-emitting diodes (LEDs) fabricated using wafer bonding with an indium tin oxide (ITO) layer and transfer printing by the laser lift-off process. Employing optically transparent and electrically conductive ITO as an adhesion layer enables to bond the GaN-based blue and AlGaInP-based yellow LEDs. We find out that the interdiffusion of In, O, and Ga at the interface between ITO and GaP allows the strong bonding of the heterogeneous optoelectronic materials and the integration of two different color LEDs on a single substrate. The efficacy of this method is demonstrated by showing the successful control of color coordinate from the vertically stacked LEDs by modulating the individual intensity of blue and yellow emissions.

Crystal-Structure-Dependent Piezotronic and Piezo-Phototronic Effects of ZnO/ZnS Core/Shell Nanowires for Enhanced Electrical Transport and Photosensing Performance

We report the crystal-structure-dependent piezotronic and piezo-phototronic effects of ZnO/ZnS core/shell nanowires (CS NWs) having different shell layer crystalline structures. The wurtzite (WZ) ZnO/WZ ZnS CS NWs showed higher electrical transport and photosensing properties under external strain than the WZ ZnO/zinc blende (ZB) ZnS CS NWs. The WZ ZnO/WZ ZnS CS NWs under a compressive strain of -0.24% showed 4.4 and 8.67 times larger increase in the output current (1.93 × 10-4 A) and photoresponsivity (8.76 × 10-1 A/W) than those under no strain. However, the WZ ZnO/ZB ZnS CS NWs under the same strain condition showed 3.2 and 2.16 times larger increase in the output current (1.13 × 10-4 A) and photoresponsivity (2.16 × 10-1 A/W) than those under no strain. This improvement is ascribed to strain-induced piezopolarization charges at both the WZ ZnO NWs and the grains of the WZ ZnS shell layer in WZ ZnO/WZ ZnS CS NWs, whereas piezopolarization charges are induced only in the ZnO core region of the WZ ZnO/ZB ZnS CS NWs. These charges can change the type-II band alignment in the ZnO and ZnS interfacial region as well as the Schottky barrier height at the junction between the semiconductor and the metal, thus facilitating electrical transport and reducing the recombination probability of charge carriers under UV irradiation.

Light-Emitting Diodes: Light-Emitting Diodes with Hierarchical and Multifunctional Surface Structures for High Light Extraction and an Antifouling Effect (Small 2/2016)

Bioinspired hierarchical structures on the surface of vertical light-emitting diodes (VLEDs) are fabricated by S.-J. Park and co-workers based on combining a self-assembled dip-coating process and nanopatterning transfer method using thermal release tape. These novel surfaces reduce the total internal reflection and grant additional antifouling abilities to VLEDs. On page 161, this provides a guideline for the design of various optoelectronic devices where not only high performance but also considerably reduced contamination by the environment are required for efficient LEDs with long operational lifespans.