Young-Joo Chang

A Center-Offset Polycrystalline-Silicon Thin-Film Transistor With

We have studied a bottom-gate polycrystalline-silicon thin-film transistor (poly-Si TFT) with amorphous-silicon (a-Si) n+ contacts and center-offset gated structure, where intrinsic poly-Si is used in the center-offset region. The fabrication process is compatible with the conventional a-Si TFT with addition of thermal annealing for crystallization of a-Si. The bottom-gate poly-Si TFT with a 5-mum offset length exhibited a field-effect mobility of 18.3 cm2/V middots and minimum OFF-state current of 2.79 times 10-12A/mum at Vds= 5 V. The leakage currents are two orders of magnitude lower than those of a nonoffset TFT with mobility drop from 23.8 to 18.3 cm2/ Vmiddots.

{\rm n}^{+}

Abstract The antiferroelectric liquid crystal display (AFLCD) is a unique display that can at demonstrate a moving image perfectly the passive matrix driving scheme. We optimised driving the waveform and introduced a dual‐driving method. Also, by improving this driving method and using line inversion method, we realize the AFLC display of high image quality with 160(RGB) × 240, 32768 colors, crosstalk free and flicker free contrast ratio is greater than 60:1, and the brightness is above 200 cd/m2.