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Dive into the research topics where Young Min Jhon is active.

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Featured researches published by Young Min Jhon.


IEEE Photonics Technology Letters | 2002

All-optical XOR gate using semiconductor optical amplifiers without additional input beam

Jae Hun Kim; Young Min Jhon; Young Tae Byun; Seok Lee; Deok Ha Woo; Sun Ho Kim

The novel design of an all-optical XOR gate by using cross-gain modulation of semiconductor optical amplifiers has been suggested and demonstrated successfully at 10 Gb/s. Boolean AB~ and A~B of the two input signals A and B have been obtained and combined to achieve the all-optical XOR gate. No additional input beam such as a clock signal or continuous wave light is used in this new design, which is required in other all-optical XOR gates.


Optics Express | 2014

A femtosecond pulse erbium fiber laser incorporating a saturable absorber based on bulk-structured Bi 2 Te 3 topological insulator

Junsu Lee; Joonhoi Koo; Young Min Jhon; Ju Han Lee

We experimentally demonstrate the use of a bulk-structured Bi(2)Te(3) topological insulator (TI) as an ultrafast mode-locker to generate femtosecond pulses from an all-fiberized cavity. Using a saturable absorber based on a mechanically exfoliated layer about 15 μm thick deposited onto a side-polished fiber, we show that stable soliton pulses with a temporal width of ~600 fs can readily be produced at 1547 nm from an erbium fiber ring cavity. Unlike previous TI-based mode-locked laser demonstrations, in which high-quality nanosheet-based TIs were used for saturable absorption, we chose to use a bulk-structured Bi(2)Te(3) layer because it is easy to fabricate. We found that the bulk-structured Bi(2)Te(3) layer can readily provide sufficient nonlinear saturable absorption for femtosecond mode-locking even if its modulation depth of ~15.7% is much lower than previously demonstrated nanosheet-structured TI-based saturable absorbers. This experimental demonstration indicates that high-crystalline-quality atomic-layered films of TI, which demand complicated and expensive material processing facilities, are not essential for ultrafast laser mode-locking applications.


Optics Communications | 2003

All-optical half adder using semiconductor optical amplifier based devices

Jae Hun Kim; Young Tae Byun; Young Min Jhon; Seok Lee; Deok Ha Woo; Sun Ho Kim

An all-optical half adder using semiconductor optical amplifier based devices is suggested and demonstrated at 10 Gbit/s. Boolean AB and AB out of two semiconductor optical amplifiers have been obtained and combined to achieve an all-optical XOR gate, which is logic SUM. Also, an all-optical XPM wavelength converter has been utilized to obtain an all-optical AND gate, which is logic CARRY. Logic SUM and CARRY are simultaneously realized. No additional input beam such as clock signal or continuous wave light other than input signals A and B is used in this new design, which is required in many other all-optical logic gates.


Optics Express | 2006

All-optical half adder using cross gain modulation in semiconductor optical amplifiers

Sang Hun Kim; Jae Hun Kim; Jae Won Choi; Chang Wan Son; Young Tae Byun; Young Min Jhon; Seok Lee; Deok Ha Woo; Sun Ho Kim

By using the gain nonlinearity characteristics of semiconductor optical amplifier, an all-optical binary half adder at 10 Gbps is demonstrated. The half adder operates in a single mechanism, which is cross gain modulation. The half adder utilizes two logic functions of SUM and CARRY, which can be demonstrated by using XOR and AND gates, respectively. The extinction ratios of both XOR and AND gates are about 6.1 dB. By achieving this experiment, we also explored the possibilities for the enhanced complex logic operation and higher chances for multiple logic integration.


Optics Express | 2015

Mode-locked, 1.94-μm, all-fiberized laser using WS₂ based evanescent field interaction.

Minwan Jung; Junsu Lee; June Park; Joonhoi Koo; Young Min Jhon; Ju Han Lee

We demonstrate the use of an all-fiberized, mode-locked 1.94 μm laser with a saturable absorption device based on a tungsten disulfide (WS2)-deposited side-polished fiber. The WS2 particles were prepared via liquid phase exfoliation (LPE) without centrifugation. A series of measurements including Raman spectroscopy, scanning electron microscopy (SEM), and atomic force microscopy (AFM) revealed that the prepared particles had thick nanostructures of more than 5 layers. The prepared saturable absorption device used the evanescent field interaction mechanism between the oscillating beam and WS2 particles and its modulation depth was measured to be ~10.9% at a wavelength of 1925 nm. Incorporating the WS2-based saturable absorption device into a thulium-holmium co-doped fiber ring cavity, stable mode-locked pulses with a temporal width of ~1.3 ps at a repetition rate of 34.8 MHz were readily obtained at a wavelength of 1941 nm. The results of this experiment confirm that WS2 can be used as an effective broadband saturable absorption material that is suitable to passively generate pulses at 2 μm wavelengths.


Optics Express | 2013

Mode-locked pulse generation from an all-fiberized, Tm-Ho-codoped fiber laser incorporating a graphene oxide-deposited side-polished fiber

Minwan Jung; Joonhoi Koo; Jaehyun Park; Yong-Won Song; Young Min Jhon; Kwanil Lee; Sang Bae Lee; Ju Han Lee

An in-depth experimental investigation was conducted into the use of a graphene oxide-based saturable absorber implemented on a side-polished fiber platform for femtosecond pulse generation in the 2 μm region. First, it was experimentally shown that an all-fiberized thulium-holmium (Tm-Ho)-codoped fiber ring laser with reduced cavity length can produce stable femtosecond pulses by incorporating a graphene oxide-deposited side-polished fiber. Second, the measurement accuracy issue in obtaining a precise pulse-width value by use of an autocorrelator together with a silica fiber-based 2 μm-band amplifier was investigated. It showed that the higher-order soliton compression effect caused by the combination of anomalous dispersion and Kerr nonlinearity can provide incorrect pulse-width information. Third, an experimental investigation into the precise role of the graphene oxide-deposited side-polished fiber was carried out to determine whether its polarization-dependent loss (PDL) can be a substantial contributor to mode-locking through nonlinear polarization rotation. By comparing its performance with that of a gold-deposited side-polished fiber, the PDL contribution to mode-locking was found to be insignificant, and the dominant mode-locking mechanism was shown to be saturable absorption due to mutual interaction between the evanescent field of the oscillated beam and the deposited graphene oxide particles.


Japanese Journal of Applied Physics | 2004

All-optical AND gate using cross-gain modulation in semiconductor optical amplifiers

Jae Hun Kim; Byung Chae Kim; Young Tae Byun; Young Min Jhon; Seok Lee; Deok Ha Woo; Sun Ho Kim

By using the cross-gain modulation of semiconductor optical amplifiers (SOAs), a novel all-optical AND gate has been successfully demonstrated at 10 Gb/s. Firstly, Boolean \overlineB was obtained using the first SOA with signal B and clock injection. Then, the all-optical AND gate is achieved by simultaneously injecting signal A and signal \overlineB out of the first SOA.


Optics Letters | 2005

Photonic phase shifters based on a vector-sum technique with polarization-maintaining fibers

Kwang-Hyun Lee; Young Min Jhon; Woo-Young Choi

We propose and demonstrate a photonic phase shifter based a on vector-sum technique that uses polarization-maintaining fibers (PMFs). We achieved a continuous and full phase shift up to 2pi at 30.48 GHz by controlling the polarization state of the light injected into two pieces of PMF of different lengths and applying two different modulator bias voltages.


IEEE Photonics Technology Letters | 1999

Relaxation-free harmonically mode-locked semiconductor-fiber ring laser

Donghwan Kim; Sang Hyuck Kim; Young Min Jhon; Seong Yun Ko; Jae Cheol Jo; Sang Sam Choi

A 10-Gb/s semiconductor-fiber ring laser is proposed and demonstrated. The performance of a harmonically mode-locked semiconductor-fiber ring laser was described in detail. A long cavity length configuration in semiconductor optical amplifier is found to eliminate the relaxation oscillation, and improved short-term amplitude stability. The laser output has a pulsewidth of 18.4 ps and a spectral width of 0.3 nm.A 10-Gb/s semiconductor-fiber ring laser is proposed and demonstrated. The performance of a harmonically mode-locked semiconductor-fiber ring laser was described in detail. A long cavity length configuration in semiconductor optical amplifier is found to eliminate the relaxation oscillation, and improved short-term amplitude stability. The laser output has a pulsewidth of 18.4 ps and a spectral width of 0.3 nm.


Journal of Optics | 2016

Harmonically mode-locked femtosecond fiber laser using non-uniform, WS2-particle deposited side-polished fiber

Junsu Lee; June Park; Joonhoi Koo; Young Min Jhon; Ju Han Lee

We investigated the feasibility of using a WS2-deposited side-polished fiber as a harmonic mode-locker to produce a femtosecond fiber laser with a frequency of 1.51 GHz. Our work focuses on using a side-polished fiber platform with non-uniform WS2 particles prepared through liquid phase exfoliation method without centrifugation. Femtosecond optical pulses were generated from an all-fiberized erbium-doped fiber-based ring cavity by increasing the pump power to achieve a tunable pulse repetition rate from 14.57 MHz to 1.51 GHz (104th harmonic). The characteristics of the output pulse were systematically investigated to analyze the pulse repetition rate, harmonic order, average output power, pulse energy, and pulse width as a function of the pump power. The output performance of the laser was compared to that of a laser based on a microfiber-based WS2 film SA described in (Yan et al 2015 Opt. Mater. Express 5 479–89). This experimental demonstration reaffirms that a side-polished fiber is an effective platform to implement an ultrafast harmonic mode-locker, and non-uniform WS2 particles prepared via simple liquid phase exfoliation method without centrifugation provide a suitable saturable absorption response at 1.55 μm.

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Deok Ha Woo

Korea Institute of Science and Technology

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Young Tae Byun

Korea Institute of Science and Technology

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Sun Ho Kim

Korea Institute of Science and Technology

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Jae Hun Kim

Korea Institute of Science and Technology

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Ju Han Lee

Seoul National University

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Young In Jhon

Korea Institute of Science and Technology

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Minah Seo

Korea Institute of Science and Technology

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Sang Sam Choi

Korea Institute of Science and Technology

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Chang Wan Son

Korea Institute of Science and Technology

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