Yu. G. Kataev

Preparation and properties of epitaxial ZnGeP2 films

Thermodynamic analysis has been applied to the vapor over a ZnGeP2 crystal when the chlorine source is provided by ZnCl2. ZnGeP2 film growth has been examined and the electrophysical and photoluminescence parameters have been measured. All these autoepitaxial films have the chalcopyrite structure, while those parameters are determined by the defects and the substrate orientation.

PREPARATION AND INVESTIGATION OF SOME PROPERTIES OF EPITAXIAL LAYERS OF THE SOLID SOLUTION SYSTEM

In this paper we give the experimental results of an investigation of the growth process, morphology, structure, and composition of epitaxial layers of the solid solution system ZnGeP2-GaP. It is established that the chemical transfer mechanism for ZnGeP2 in a closed system with the transport agent ZnCl2 is analogous to the transfer mechanism of binary semiconductors and takes place with the decomposition of the compound into its elements. It is demonstrated that when ZnGeP2 is deposited on substrates of GaP monocrystalline films of the solid solution ZnGeP2-2GaP are formed, the composition of which varies along the thickness of the film from 1∶3 at the boundary with the substrate to 1∶1 in the stationary region for the boundary. The films have a zinc blende structure given by the replacement of Zn and Ge in the sites of the cation sublattice of ZnGeP2 by gallium, which enters into the gas phase from the substrate during its gas etching before the start of the growth.

Electrophysical properties of epitaxial gallium arsenide doped with acceptor impurities

Epitaxial layers of gallium arsenide doped with zinc and cadmium were grown in a chloride vapor-transport system using diethylzinc and dimethylcadmium as the sources of the impurity. We studied the effect of the inlet pressure of the impurities and the growth temperature on the doping level of the layers. We investigated the temperature dependences of the hole concentration and mobility in layers doped with zinc and cadmium up to different levels.

Electron and impurity distributions in epitaxial n-type gallium arsenide

The electron, donor, and acceptor distributions along the thickness of epitaxial gallium arsenide films were studied as functions of the nature and orientation of the substrate. There is a discussion of mechanisms which may be responsible for these distributions.

Effects of crystallization temperature on the growth and doping of autoep it axial gallium arsenide films: II. Electrophysical properties of films of (1?1?1.075) a orientation

Dope concentration measurements have been made on epitaxial gallium arsenide films of (1 ∶1∶1.075) A orientation; there is an optimal temperature range, which corresponds to the minimum impurity concentration and maximum electron mobility. The electrophysical properties and morphology are clearly correlated.