Yu-Heng Jan

Temperature Dependence Study of Mesa-Type InGaAs/InAlAs Avalanche Photodiode Characteristics

Avalanche photodiodes (APDs) are key optical receivers due to their performance advantages of high speed, high sensitivity, and low noise. The most critical device parameters of APD include the avalanche breakdown voltage and dark current. In this work, we study the temperature dependence of the breakdown voltage and dark current of the mesa-type APD over a wide temperature range of 20–145°C. We institute an empirical model based on impact ionization processes to account for the experimental data. It is shown that highly stable breakdown characteristics of mesa-type APD can be attained with the optimization of the multiplication layer design. We have achieved excellent stability of avalanche breakdown voltage with a temperature coefficient of 0.017 V/°C. The temperature dependence of dark current is attributed to generation-recombination mechanism. The bandgap energy is estimated to be about 0.71 eV based on the temperature variation of dark current, in good agreement with the value for InGaAs.

Nanoscale III-V Semiconductor Photodetectors for High-Speed Optical Communications

Nanophotonics involves the study of the behavior of light on nanometer scale. Modern nanoscale semiconductor photodetectors are important building blocks for high-speed optical communications. In this chapter, we review the state-of-the-art 2.5G, 10G, and 25G avalanche photodiodes (APDs) that are available in commercial applications. We discuss the key device parameters, including avalanche breakdown voltage, dark current, temperature dependence, bandwidth, and sensitivity. We also present reliability analysis on wear-out degradation and optical/electrical overload stress. We discuss the reliability challenges of nanoscale photodetectors associated with device miniaturization for the future. The reliability aspects in terms of high electric field, Joule heating, and geometry inhomogeneity are highlighted.

Nanoscale Nucleation and Growth of Non-Stoichiometric V-Shaped InP Defect in Heterogeneous InGaAsP/InP Array

Nanotechnology is a broad field that involves the manipulation of atoms and molecules. For nanophotonics, defect formation in nanostructured compound semiconductor system is of great technological interest. In this paper, we study the nanoscale nucleation and growth of V-shaped defect in the heterogeneous InGaAsP/InP array. We have observed that the nucleation originated from the phosphorus-deficient disordering that was likely induced by reactive ion etching. During the nucleation, the phosphorus-deficient In 1+x P 1-x compound was developed at the trench. The triangular nano-precipitates of In 1+x P 1-x with sizes of 20-30nm were formed. The ratio of In to P in the non-stoichiometric compound was higher in the upper portion of the V-defect, likely due to antisite defect mechanism. During the defect growth process, the phosphorus-deficient nucleation site expanded to form open, inverted pyramid with sidewalls following the crystallographic planes.

Design-in ESD reliability of 10Gb/s uncooled (−40 to +85 °C), harsh-environmental lasers for 4G wireless mobile networks

We study the electrostatic discharge (ESD) performance of 10G uncooled, wireless ridge lasers. We show the ESD and bandwidth can be optimized by anti-reflective (AR) coating to sustain harsh environmental requirements for the 4G wireless telecom & avionics applications.