Yu-ichiro Matsushita

Comparative study of hybrid functionals applied to structural and electronic properties of semiconductors and insulators

We present a systematic study that clarifies validity and limitation of current hybrid functionals in density functional theory for structural and electronic properties of various semiconductors and insulators. The three hybrid functionals, PBE0 by Perdew, Ernzerhof, and Becke, HSE by Heyd, Sucseria, and Ernzerhof, and a long-range corrected (LC) functional, are implemented in a well-established plane-wave-basis-set scheme combined with norm-conserving pseudopotentials, thus enabling us to assess applicability of each functional on equal footing to the properties of the materials. The materials we have examined in this paper range from covalent to ionic materials as well as a rare-gas solid whose energy gaps determined by experiments are in the range of 0.6 eV - 14.2 eV: i.e., Ge, Si, BaTiO

Interstitial Channels that Control Band Gaps and Effective Masses in Tetrahedrally Bonded Semiconductors

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Band-unfolding approach to moiré-induced band-gap opening and Fermi level velocity reduction in twisted bilayer graphene

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Large-scale real-space density-functional calculations: Moiré-induced electron localization in graphene

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Large magnetocrystalline anisotropy in tetragonally distorted Heuslers: a systematic study

-GaN, diamond, MgO, NaCl, LiCl, Kr, and LiF. We find that the calculated bulk moduli by the hybrid functionals show better agreement with the experiments than the generalized gradient approximation (GGA) provides, whereas the calculated lattice constants by the hybrid functionals and GGA show comparable accuracy. The calculated energy band gaps and the valence-band widths for the ten prototype materials show substantial improvement using the hybrid functional compared with GGA. In particular, it is found that the band gaps of the ionic materials as well as the rare-gas solid are well reproduced by the LC-hybrid functional, whereas those of covalent materials are well described by the HSE functional. We also examine exchange effects due to short-range and long-range components of the Coulomb interaction and propose an optimum recipe to the short-range and long-range separation in treating the exchange energy.

A Novel Intrinsic Interface State Controlled by Atomic Stacking Sequence at Interfaces of SiC/SiO2

We find that electron states at the bottom of the conduction bands of covalent semiconductors are distributed mainly in the interstitial channels and that this floating nature leads to the band-gap variation and the anisotropic effective masses in various polytypes of SiC. We find that the channel length, rather than the hexagonality prevailed in the past, is the decisive factor for the band-gap variation in the polytypes. We also find that the floating nature causes two-dimensional electron and hole systems at the interface of different SiC polytypes and even one-dimensional channels near the inclined SiC surface.

Electron Confinement Due to Stacking Control of Atomic Layers in SiC Polytypes: Roles of Floating States and Spontaneous Polarization

We report on the energy spectrum of electrons in twisted bilayer graphene (tBLG) obtained by the band-unfolding method in the tight-binding model. We find the band-gap opening at particular points in the reciprocal space, that elucidates the drastic reduction of the Fermi-level velocity with the tiny twisted angles in tBLGs. We find that Moir\`e pattern caused by the twist of the two graphene layers generates interactions among Dirac cones, otherwise absent, and the resultant cone-cone interactions peculiar to each point in the reciprocal space causes the energy gap and thus reduced the Fermi-level velocity.

Band structures in coupled-cluster singles-and-doubles Green’s function (GFCCSD)

We show that our real-space finite-difference scheme allows us to perform density-functional calculations for nanometer-scale targets containing more than 100 000 atoms. This real-space scheme is applied to twisted bilayer graphene, clarifying that Moire pattern induced in the slightly twisted bilayer graphene drastically modifies the atomic and electronic structures.

First-Principles Prediction of Densities of Amorphous Materials: The Case of Amorphous Silicon

With a view to the design of hard magnets without rare earths we explore the possibility of large magnetocrystalline anisotropy energies in Heusler compounds that are unstable with respect to a tetragonal distortion. We consider the Heusler compounds Fe2YZ with Y = (Ni, Co, Pt), and Co2YZ with Y = (Ni, Fe, Pt) where, in both cases, Z = (Al, Ga, Ge, In, Sn). We find that for the Co2NiZ, Co2PtZ, and Fe2PtZ families the cubic phase is always, at T = 0, unstable with respect to a tetragonal distortion, while, in contrast, for the Fe2NiZ and Fe2CoZ families this is the case for only 2 compounds—Fe2NiGe and Fe2NiSn. For all compounds in which a tetragonal distortion occurs we calculate the magnetocrystalline anisotropy energy (MAE) finding remarkably large values for the Pt containing Heuslers, but also large values for a number of the other compounds (e.g. Co2NiGa has an MAE of −2.38 MJ m−3). The tendency to a tetragonal distortion we find to be strongly correlated with a high density of states (DOS) at the Fermi level in the cubic phase. As a corollary to this fact we observe that upon doping compounds for which the cubic structure is stable such that the Fermi level enters a region of high DOS, a tetragonal distortion is induced and a correspondingly large value of the MAE is then observed.

Comparison of Green’s functions for transition metal atoms using self-energy functional theory and coupled-cluster singles and doubles (CCSD)

On the basis of ab initio total-energy electronic-structure calculations, we find that electron states localized at the SiC/SiO2 interface emerge in the energy region between 0.3 eV below and 1.2 eV above the bulk conduction-band minimum (CBM) of SiC, being sensitive to the sequence of atomic bilayers in SiC near the interface. These new interface states unrecognized in the past are due to the peculiar characteristics of the CBM states that are distributed along the crystallographic channels. We also find that the electron doping modifies the energetics among the different stacking structures. Implication for performance of electron devices fabricated on different SiC surfaces is discussed.