Yuan Ningyi

Property comparison between tantalum and tungsten doped polycrystalline VO 2 thin films

Vanadium dioxide films doped tantalum and tungsten were deposited on SiO₂/Si substrate by modified Ion Beam Enhanced Deposition (IBED) method. The doped polycrystalline VO₂ films have single (002) orientation. The phase transition temperature was 28degC and 42degC for W and Ta doping respectively. The TCR was -3.4%/K and -10.14%/K at 300 K for V_0.97W_0.03O₂ and V_0.97Ta_0.03O₂ respectively. Experimental results shown the crystal lattice constant d was elongated about 0.34% and 0.24%, phase transition hysteresis was 2.1degC and 1.2degC, the resistivity change magnitude was 1.6 and 1.2 for W-and W-and W-and Ta-doped IBED VO₂ films respectively.

In-N co-doped P-type ZnO films electrical prepared by modified ion beam enhanced deposition

In-N co-doped P-type ZnO films were prepared on SiO₂ and glass substrates by IBED method. The structural, optical and electrical properties were characterized by XRD, XPS, AFM and Hall test. The tests results show that the film was polycrystalline with a preferred (002) orientation. The resistivity, mobility and carrier concentration was 1.6times10^-3 Omegamiddotcm, 35.9 cm²/VmiddotS and 1.66times10²⁰/cm³ after annealing at 600degC for 30 min, respectively.