Yuanyue Liu

The Role of Surface Oxygen in the Growth of Large Single-Crystal Graphene on Copper

Oxygen Control of Graphene Growth The growth of graphene on copper surfaces through the decomposition of hydrocarbons such as methane can result in a wide variety of crystal domain sizes and morphologies. Hao et al. (p. 720, published online 24 October; see the cover) found that the presence of surface oxygen could limit the number of nucleation sites and allowed centimeter-scale domains to grow through a diffusion-limited mechanism. The electrical conductivity of the graphene was comparable to that of exfoliated graphene. Oxygen treatment of a copper surface promoted the faster growth of compact, centimeter-scale graphene domains. The growth of high-quality single crystals of graphene by chemical vapor deposition on copper (Cu) has not always achieved control over domain size and morphology, and the results vary from lab to lab under presumably similar growth conditions. We discovered that oxygen (O) on the Cu surface substantially decreased the graphene nucleation density by passivating Cu surface active sites. Control of surface O enabled repeatable growth of centimeter-scale single-crystal graphene domains. Oxygen also accelerated graphene domain growth and shifted the growth kinetics from edge-attachment–limited to diffusion-limited. Correspondingly, the compact graphene domain shapes became dendritic. The electrical quality of the graphene films was equivalent to that of mechanically exfoliated graphene, in spite of being grown in the presence of O.

Cones, pringles, and grain boundary landscapes in graphene topology.

A polycrystalline graphene consists of perfect domains tilted at angle alpha to each other and separated by the grain boundaries (GB). These nearly one-dimensional regions consist in turn of elementary topological defects, 5-pentagons and 7-heptagons, often paired up into 5-7 dislocations. Energy G(alpha) of GB computed for all range 0 <or= alpha <or= pi/3, shows a slightly asymmetric behavior, reaching approximately 5 eV/nm in the middle, where the 5s and 7s qualitatively reorganize in transition from nearly armchair to zigzag interfaces. Analysis shows that two-dimensional (2D) nature permits the off-plane relaxation, unavailable in three-dimensional (3D) materials, qualitatively reducing the energy of defects on one hand while forming stable 3D landscapes on the other. Interestingly, while the GB display small off-plane elevation, the random distributions of 5s and 7s create roughness that scales inversely with defect concentration, h approximately n(-1/2).

Laser-induced porous graphene films from commercial polymers

Synthesis and patterning of carbon nanomaterials cost effectively is a challenge in electronic and energy storage devices. Here report a one-step, scalable approach for producing and patterning porous graphene films with 3-dimensional networks from commercial polymer films using a CO2 infrared laser. The sp3-carbon atoms are photothermally converted to sp2-carbon atoms by pulsed laser irradiation. The resulting laser-induced graphene (LIG) exhibits high electrical conductivity. The LIG can be readily patterned to interdigitated electrodes for in-plane microsupercapacitors with specific capacitances of >4 mF·cm−2 and power densities of ~9 mW·cm−2. Theoretical calculations partially suggest that enhanced capacitance may result from LIG’s unusual ultra-polycrystalline lattice of pentagon-heptagon structures. Combined with the advantage of one-step processing of LIG in air from commercial polymer sheets, which would allow the employment of a roll-to-roll manufacturing process, this technique provides a rapid route to polymer-written electronic and energy storage devices.

BN White Graphene with “Colorful” Edges: The Energies and Morphology

Interfaces play a key role in low dimensional materials like graphene or its boron nitrogen analog, white graphene. The edge energy of hexagonal boron nitride (h-BN) has not been determined as its lower symmetry makes it difficult to separate the opposite B-rich and N-rich zigzag sides. We report unambiguous energy values for arbitrary edges of BN, including the dependence on the elemental chemical potentials of B and N species. A useful manifestation of the additional Gibbs degree of freedom in the binary system, this dependence offers a way to control the morphology of pure BN or its carbon inclusions and to engineer their electronic and magnetic properties.

Feasibility of Lithium Storage on Graphene and Its Derivatives

Nanomaterials are anticipated to be promising storage media, owing to their high surface-to-mass ratio. The high hydrogen capacity achieved by using graphene has reinforced this opinion and motivated investigations of the possibility to use it to store another important energy carrier - lithium (Li). While the first-principles computations show that the Li capacity of pristine graphene, limited by Li clustering and phase separation, is lower than that offered by Li intercalation in graphite, we explore the feasibility of modifying graphene for better Li storage. It is found that certain structural defects in graphene can bind Li stably, yet a more efficacious approach is through substitution doping with boron (B). In particular, the layered C3B compound stands out as a promising Li storage medium. The monolayer C3B has a capacity of 714 mAh/g (as Li1.25C3B), and the capacity of stacked C3B is 857 mAh/g (as Li1.5C3B), which is about twice as large as graphites 372 mAh/g (as LiC6). Our results help clarify the mechanism of Li storage in low-dimensional materials, and shed light on the rational design of nanoarchitectures for energy storage.

Predicting Dislocations and Grain Boundaries in Two-Dimensional Metal-Disulfides from the First Principles

Guided by the principles of dislocation theory, we use the first-principles calculations to determine the structure and properties of dislocations and grain boundaries (GB) in single-layer transition metal disulfides MS(2) (M = Mo or W). In sharp contrast to other two-dimensional materials (truly planar graphene and h-BN), here the edge dislocations extend in third dimension, forming concave dreidel-shaped polyhedra. They include different number of homoelemental bonds and, by reacting with vacancies, interstitials, and atom substitutions, yield families of the derivative cores for each Burgers vector. The overall structures of GB are controlled by both local-chemical and far-field mechanical energies and display different combinations of dislocation cores. Further, we find two distinct electronic behaviors of GB. Typically, their localized deep-level states act as sinks for carriers but at large 60°-tilt the GB become metallic. The analysis shows how the versatile GB in MS(2) (if carefully engineered) should enable new developments for electronic and opto-electronic applications.

Ripping graphene: preferred directions.

The understanding of crack formation due to applied stress is key to predicting the ultimate mechanical behavior of many solids. Here we present experimental and theoretical studies on cracks or tears in suspended monolayer graphene membranes. Using transmission electron microscopy, we investigate the crystallographic orientations of tears. Edges from mechanically induced ripping exhibit straight lines and are predominantly aligned in the armchair or zigzag directions of the graphene lattice. Electron-beam induced propagation of tears is also observed. Theoretical simulations account for the observed preferred tear directions, attributing the observed effect to an unusual nonmonotonic dependence of graphene edge energy on edge orientation with respect to the lattice. Furthermore, we study the behavior of tears in the vicinity of graphene grain boundaries, where tears surprisingly do not follow but cross grain boundaries. Our study provides significant insights into breakdown mechanisms of graphene in the presence of defective structures such as cracks and grain boundaries.

Dislocations and grain boundaries in two-dimensional boron nitride.

A new dislocation structure-square-octagon pair (4|8) is discovered in two-dimensional boron nitride (h-BN), via first-principles calculations. It has lower energy than corresponding pentagon-heptagon pairs (5|7), which contain unfavorable homoelemental bonds. On the basis of the structures of dislocations, grain boundaries (GB) in BN are investigated. Depending on the tilt angle of grains, GB can be either polar (B-rich or N-rich), constituted by 5|7s, or unpolar, composed of 4|8s. The polar GBs carry net charges, positive at B-rich and negative at N-rich ones. In contrast to GBs in graphene which generally impede the electronic transport, polar GBs have a smaller bandgap compared to perfect BN, which may suggest interesting electronic and optical applications.

Equilibrium at the edge and atomistic mechanisms of graphene growth

The morphology of graphene is crucial for its applications, yet an adequate theory of its growth is lacking: It is either simplified to a phenomenological-continuum level or is overly detailed in atomistic simulations, which are often intractable. Here we put forward a comprehensive picture dubbed nanoreactor, which draws from ideas of step-flow crystal growth augmented by detailed first-principles calculations. As the carbon atoms migrate from the feedstock to catalyst to final graphene lattice, they go through a sequence of states whose energy levels can be computed and arranged into a step-by-step map. Analysis begins with the structure and energies of arbitrary edges to yield equilibrium island shapes. Then, it elucidates how the atoms dock at the edges and how they avoid forming defects. The sequence of atomic row assembly determines the kinetic anisotropy of growth, and consequently, graphene island morphology, explaining a number of experimental facts and suggesting how the growth product can further be improved. Finally, this analysis adds a useful perspective on the synthesis of carbon nanotubes and its essential distinction from graphene.

Probing the Synthesis of Two-Dimensional Boron by First-Principles Computations†

Boron synthesis, in theory: Although two-dimensional boron sheets have attracted considerable interest because of their theoretically predicted properties, synthesis of such sheets remains a challenge. The feasibility of different synthetic methods for two-dimensional boron sheets was assessed using first-principles calculations, possibly paving the way towards its application in nanoelectronics.