Yücel Kaptan

Quantum coherence induces pulse shape modification in a semiconductor optical amplifier at room temperature

Coherence in light–matter interaction is a necessary ingredient if light is used to control the quantum state of a material system. Coherent effects are firmly associated with isolated systems kept at low temperature. The exceedingly fast dephasing in condensed matter environments, in particular at elevated temperatures, may well erase all coherent information in the material at timescales shorter than a laser excitation pulse. Here we show for an ensemble of semiconductor quantum dots that even in the presence of ultrafast dephasing, for suitably designed condensed matter systems quantum-coherent effects are robust enough to be observable at room temperature. Our conclusions are based on an analysis of the reshaping an ultrafast laser pulse undergoes on propagation through a semiconductor quantum dot amplifier. We show that this pulse modification contains the signature of coherent light–matter interaction and can be controlled by adjusting the population of the quantum dots via electrical injection.

Time-resolved amplified spontaneous emission in quantum dots

In time-resolved experiments at InGaAs/GaAs quantum-dots-in-a-well (DWELL) semiconductor optical amplifiers, pump-probe of the ground state (GS) population, and complementary measurement of the amplified spontaneous emission of the excited state (ES) population, we are able to separate the early subpicosecond dephasing dynamics from the later picosecond population relaxation dynamics. We observe a 10 ps delay between the nonlinear GS pulse amplification and the subsequent ES population drop-off that supports the dominance of a direct two dimensional reservoir-GS capture relaxation path in electrically pumped quantum-dot-DWELL structures.

Stability of quantum-dot excited-state laser emission under simultaneous ground-state perturbation

The impact of ground state amplification on the laser emission of In(Ga)As quantum dot excited state lasers is studied in time-resolved experiments. We find that a depopulation of the quantum dot ground state is followed by a drop in excited state lasing intensity. The magnitude of the drop is strongly dependent on the wavelength of the depletion pulse and the applied injection current. Numerical simulations based on laser rate equations reproduce the experimental results and explain the wavelength dependence by the different dynamics in lasing and non-lasing sub-ensembles within the inhomogeneously broadened quantum dots. At high injection levels, the observed response even upon perturbation of the lasing sub-ensemble is small and followed by a fast recovery, thus supporting the capacity of fast modulation in dual-state devices.

Gain dynamics of quantum dot devices for dual-state operation

Ground state gain dynamics of In(Ga)As-quantum dot excited state lasers are investigated via single-color ultrafast pump-probe spectroscopy below and above lasing threshold. Two-color pump-probe experiments are used to localize lasing and non-lasing quantum dots within the inhomogeneously broadened ground state. Single-color results yield similar gain recovery rates of the ground state for lasing and non-lasing quantum dots decreasing from 6 ps to 2 ps with increasing injection current. We find that ground state gain dynamics are influenced solely by the injection current and unaffected by laser operation of the excited state. This independence is promising for dual-state operation schemes in quantum dot based optoelectronic devices.

Strong amplitude-phase coupling in submonolayer quantum dots

Submonolayer quantum dots promise to combine the beneficial features of zero- and two-dimensional carrier confinement. To explore their potential with respect to all-optical signal processing, we investigate the amplitude-phase coupling (α-parameter) in semiconductor optical amplifiers based on InAs/GaAs submonolayer quantum dots in ultrafast pump-probe experiments. Lateral coupling provides an efficient carrier reservoir and gives rise to a large α-parameter. Combined with a high modal gain and an ultrafast gain recovery, this makes the submonolayer quantum dots an attractive gain medium for nonlinear optical signal processing.

Fast gain and phase recovery of semiconductor optical amplifiers based on submonolayer quantum dots

Submonolayer quantum dots as active medium in opto-electronic devices promise to combine the high density of states of quantum wells with the fast recovery dynamics of self-assembled quantum dots. We investigate the gain and phase recovery dynamics of a semiconductor optical amplifier based on InAs submonolayer quantum dots in the regime of linear operation by one- and two-color heterodyne pump-probe spectroscopy. We find an as fast recovery dynamics as for quantum dot-in-a-well structures, reaching 2 ps at moderate injection currents. The effective quantum well embedding the submonolayer quantum dots acts as a fast and efficient carrier reservoir.

Crossed excitons in a semiconductor nanostructure of mixed dimensionality

Semiconductor systems of reduced dimensionality, e.g., quantum dots or quantum wells, display a characteristic spectrum of confined excitons. Combining several of these systems may lead to the formation of “crossed” excitons, and thus new equilibrium states and scattering channels. We derive gain excitation spectra from two-color pump-probe experiments on an In(Ga)As based quantum dot semiconductor optical amplifier by analyzing the amplitudes of the traces. This grants access to the quantum dot response, even in the presence of strong absorption by the surroundings at the excitation energy. The gain excitation spectra yield evidence of crossed quantum dot-bulk states.

Evidence of macroscopic coherence at room temperature: Rabi oscillation induced pulse break-up in a quantum dot amplifier

We study experimentally and numerically the changes in pulse shape a Gaussian laser pulse undergoes when propagating through an electrically pumped quantum dot semiconductor optical amplifier (QD-SOA). The pulse energy is set to be resonant to the quantum dot ground state transition, and the pulse shape is analyzed in phase and amplitude in a heterodyne cross-correlation experiment. For the case of an inverted system, we observe the appearance of a periodic modulation of the temporal pulse profile above a critical pulse power. Similar signatures of pulse break-up have been observed at low temperature in quantum dot ensembles without electrical pumping and were linked to optically induced Rabi oscillations imprinting the coherent switching between absorption and stimulated emission of photons by the material system.

Pulse shaping and break-up by quantum-coherent effects in quantum-dot amplifiers at room temperature

We show the occurrence of Rabi oscillation induced pulse shaping and break-up in a 1.3μm wavelength semiconductor quantum-dot optical amplifiers at room temperature in numerical simulations and experimental results.