Yue Aiwen

Fabrication of a 10 Gb/s InGaAs/InP Avalanche Photodiode with an AlGaInAs/InP Distributed Bragg Reflector

A new planar InGaAs/InP avalanche photodiode (APD) is proposed and fabricated, which incorporates a high reflective AlGaInAs/InP distributed Bragg reflector (DBR) to improve its responsivity. The fabricated APD exhibits a low dark current of less than 3nA at M = 10 and high responsivity of 0.92 A/W at M = 1. The gain bandwidth product of the device is above 80 GHz. The APD receiver exhibits a sensitivity of over −26dBm at BER = 10−12, which is sufficient for 10Gb/s communication systems.

Improvement of 1.3-?m GaInNAs Vertical Cavity Surface Emitting Lasers Grown by MOVPE

We report the improved performance of the conventional contact 1.3 mum GaInNAs vertical cavity surface emitting lasers (VCSELs) grown by metal-organic vapour-phase epitaxy (MOVPE). A new wet etching approach was applied in the fabrication of 1.3 mum GaInNAs oxide-confined VCSELs. The threshold current of single mode device is 1.0 mA. The multiple mode devices show very low threshold currents below 2 mA at 5-85degreesC, which were the best results for 1.3 mum GaInNAs VCSELs reported. Maximum single mode output power of 0.256 mW and the maximum multiple mode power of 0.883 mW were obtained at room temperature.