Yulin Zhong

Parasitics consideration of layout design within IGBT module

To keep stray inductance low is a basic requirement in package design of IGBT modules. Meanwhile, paralleling of several switches is unavoidable in modern power electronics to insure always increasing current levels. Current balance between paralleled chips is another concern. In this paper, a simple power module, several different types of IGBT chips are respectively associated to reach the classical 400 A. After the extraction of the module parasitics, mainly the stray inductance, a study is performed to characterize the switching behavior for the two different power module layout cases.

A novel IGBT package to reduce current imbalance with pinfin baseplate

Conventional 2 in 1 IGBT package with 62mm×150 mm suffers from imbalance of current distribution and switching loss due to the different effect of internal electromagnetic field on multiple IGBT chips connected in parallel. A novel DBC (Direct Bonding Copper) layout was proposed in this paper to reduce the parasitics and the electromagnetic coupling between control loop and main current path. And a novel pinfin-baseplate was elaborated for this package to improve its thermal management performance. Both simulation and experiment shows that this package is superior to the conventional one in current sharing and thermal dissipation.

Comprehensive comparative analysis of two types of commonly-used layouts of IGBT packages

A reasonable design of IGBT internal layout is essential to maximize the overall electrical and thermal performance of an IGBT module. For two types of typical layouts of one commonly-used IGBT package with multiple chips connected in parallel, a module-level IGBT equivalent circuit based on chip-level model and accurate interconnection parasitics was constructed in this paper. Comparative simulations have been done to evaluate the advantages and disadvantages of the two types of layouts. The results not only demonstrate the internal electromagnetic & thermal physics which is very hard to be observed in experiments, but also offers a useful guidance for practical application of high power IGBT modules.

A thermal model for electrothermal simulation of power modules

A thermal model of power modules based on the physical dimension and thermal properties is proposed in this paper. The heat path in the power module is considered as a one-dimensional heat transfer in the model. The method of the parameters extraction for the model is given in the paper. With high speed and accuracy, the thermal model is suit for electrothermal simulation. The proposed model is verified by experimental results.

Design and packaging of 1200V/300A-IGBT power module for electric vehicle

Aimed at the special requirements of Electric Vehicle, 1200V/300A-IGBT module has been designed, packaged. The packaging structure adopts 2 in 1 type. The dimension of packaging structure is 62*108mm. The technological process is designed according to the characters of processing equipments in the laboratory, and some key processes, such as wire bonding and soldering are optimized. Based on the optimized process parameters, 1200V/300A-IGBT module samples are packaged. Finally, these samples had been implemented comprehensive test. The test results show the performances of these designed and packaged IGBT module meet the application requirements.

Design & analysis of a novel IGBT package with double-sided cooling

Conventional IGBT modules with bonding wires have been suffered from relatively high thermal resistance from junction to case (Rthjc) due to unavoidable single-sided cooling (SSC), and also suffered from uneven current distribution due to unsymmetrical electrical interconnection. A novel IGBT package with double-sided cooling (DSC) geometry was proposed in this paper to overcome these problems. A comprehensive comparative study between the DSC geometry and the SSC geometry has been conducted by simulations. The analytical results demonstrate that the DSC geometry is well superior to the conventional SSC geometry in both electrical and thermal behavior, which predicts a brighter future in various key applications for this emerging package.

A novel driving circuit topology to improve IGBT gate driving performance

The conventional totem-pole BJT used in IGBT gate driving circuit limit the maximum output current due to desaturation of BJTs collector-to-base voltage. This paper presente a novel circuit topology to increase the output current of totem-pole BJT and also decrease the BJT power loss. As a result, the switching speed of IGBT can be raised and the switching loss of IGBT is reduced. At last, both the Pspice simulation and experimental results based on the HCPL-316J driving IC verity the advantage of the topology.

Common-mode EMI problem & solution in designing an IPM

Intelligent power module (IPM) is known for its excellent features such as high compactness and ease-of-use. Some key points must be taken into account during the designing stage of an IPM. The internal Common-mode electromagnetic interference (CM EMI) is apt to cause an IPM to malfunction in normal operation. A practicable method of PCB layout is proposed in this paper to mitigate the CM EMI inside a newly-developed 6-in-1-packaged-IGBT-based IPM. Detailed analysis is given for the CM-EMI and its influence. Both simulation result and the experimental results verified the effectiveness of the method.

A simulation research on the reverse recovery characteristics of PIN diode

From the basis of math-physics, the reverse recovery characteristics of the power PIN diode are studied in detail. The simulation model of PIN diode which can describe correctly the reverse recovery current is obtained. This model overcomes the defects of the standard SPICE model which completely ignores the turn-off characteristics. The simulation comparison between the new model with the standard one based charge-control verifies the model availability.