Yumeng Shi

Single-Layer MoS2 Phototransistors

A new phototransistor based on the mechanically exfoliated single-layer MoS(2) nanosheet is fabricated, and its light-induced electric properties are investigated in detail. Photocurrent generated from the phototransistor is solely determined by the illuminated optical power at a constant drain or gate voltage. The switching behavior of photocurrent generation and annihilation can be completely finished within ca. 50 ms, and it shows good stability. Especially, the single-layer MoS(2) phototransistor exhibits a better photoresponsivity as compared with the graphene-based device. The unique characteristics of incident-light control, prompt photoswitching, and good photoresponsivity from the MoS(2) phototransistor pave an avenue to develop the single-layer semiconducting materials for multifunctional optoelectronic device applications in the future.

Growth of Large-Area and Highly Crystalline MoS2 Thin Layers on Insulating Substrates

The two-dimensional layer of molybdenum disulfide (MoS(2)) has recently attracted much interest due to its direct-gap property and potential applications in optoelectronics and energy harvesting. However, the synthetic approach to obtain high-quality and large-area MoS(2) atomic thin layers is still rare. Here we report that the high-temperature annealing of a thermally decomposed ammonium thiomolybdate layer in the presence of sulfur can produce large-area MoS(2) thin layers with superior electrical performance on insulating substrates. Spectroscopic and microscopic results reveal that the synthesized MoS(2) sheets are highly crystalline. The electron mobility of the bottom-gate transistor devices made of the synthesized MoS(2) layer is comparable with those of the micromechanically exfoliated thin sheets from MoS(2) crystals. This synthetic approach is simple, scalable, and applicable to other transition metal dichalcogenides. Meanwhile, the obtained MoS(2) films are transferable to arbitrary substrates, providing great opportunities to make layered composites by stacking various atomically thin layers.

Integrated Circuits Based on Bilayer MoS2 Transistors

Two-dimensional (2D) materials, such as molybdenum disulfide (MoS(2)), have been shown to exhibit excellent electrical and optical properties. The semiconducting nature of MoS(2) allows it to overcome the shortcomings of zero-bandgap graphene, while still sharing many of graphenes advantages for electronic and optoelectronic applications. Discrete electronic and optoelectronic components, such as field-effect transistors, sensors, and photodetectors made from few-layer MoS(2) show promising performance as potential substitute of Si in conventional electronics and of organic and amorphous Si semiconductors in ubiquitous systems and display applications. An important next step is the fabrication of fully integrated multistage circuits and logic building blocks on MoS(2) to demonstrate its capability for complex digital logic and high-frequency ac applications. This paper demonstrates an inverter, a NAND gate, a static random access memory, and a five-stage ring oscillator based on a direct-coupled transistor logic technology. The circuits comprise between 2 to 12 transistors seamlessly integrated side-by-side on a single sheet of bilayer MoS(2). Both enhancement-mode and depletion-mode transistors were fabricated thanks to the use of gate metals with different work functions.

Preparation of Novel 3D Graphene Networks for Supercapacitor Applications

The supercapacitor is considered as a promising candidate for energy storage due to its high power performance, long life cycle, and low maintenance cost. [ 3 ] Pseudocapacitive materials, such as transition metal oxides, are being explored for use in supercapacitors with a large specifi c capacitance and high energy density. [ 4 ] However, pseudocapacitors often suffer from the low rate capability and poor stability, because the active materials are usually insulating or semiconducting, which hinders the fast electron transport required for high charge/discharge rates. As an ideal matrix, graphene is commonly used for growth of functional nanomaterials. [ 1a , 2c , 5 ] Recently, nanocomposites made by graphene and transition metal oxides have attracted wide attention in the fi eld of supercapacitors due to their synergetic effect, arising from the combination of the redox reaction of metal oxides with the high surface area/conductivity of graphene, to improve the electrochemical performance. [ 6 ]

Intrinsic Structural Defects in Monolayer Molybdenum Disulfide

Monolayer molybdenum disulfide (MoS2) is a two-dimensional direct band gap semiconductor with unique mechanical, electronic, optical, and chemical properties that can be utilized for novel nanoelectronics and optoelectronics devices. The performance of these devices strongly depends on the quality and defect morphology of the MoS2 layers. Here we provide a systematic study of intrinsic structural defects in chemical vapor phase grown monolayer MoS2, including point defects, dislocations, grain boundaries, and edges, via direct atomic resolution imaging, and explore their energy landscape and electronic properties using first-principles calculations. A rich variety of point defects and dislocation cores, distinct from those present in graphene, were observed in MoS2. We discover that one-dimensional metallic wires can be created via two different types of 60° grain boundaries consisting of distinct 4-fold ring chains. A new type of edge reconstruction, representing a transition state during growth, was also identified, providing insights into the material growth mechanism. The atomic scale study of structural defects presented here brings new opportunities to tailor the properties of MoS2 via controlled synthesis and defect engineering.

van der Waals Epitaxy of MoS2 Layers Using Graphene As Growth Templates

We present a method for synthesizing MoS(2)/Graphene hybrid heterostructures with a growth template of graphene-covered Cu foil. Compared to other recent reports, (1, 2) a much lower growth temperature of 400 °C is required for this procedure. The chemical vapor deposition of MoS(2) on the graphene surface gives rise to single crystalline hexagonal flakes with a typical lateral size ranging from several hundred nanometers to several micrometers. The precursor (ammonium thiomolybdate) together with solvent was transported to graphene surface by a carrier gas at room temperature, which was then followed by post annealing. At an elevated temperature, the precursor self-assembles to form MoS(2) flakes epitaxially on the graphene surface via thermal decomposition. With higher amount of precursor delivered onto the graphene surface, a continuous MoS(2) film on graphene can be obtained. This simple chemical vapor deposition method provides a unique approach for the synthesis of graphene heterostructures and surface functionalization of graphene. The synthesized two-dimensional MoS(2)/Graphene hybrids possess great potential toward the development of new optical and electronic devices as well as a wide variety of newly synthesizable compounds for catalysts.

Synthesis of Few-Layer Hexagonal Boron Nitride Thin Film by Chemical Vapor Deposition

In this contribution we demonstrate a method of synthesizing a hexagonal boron nitride (h-BN) thin film by ambient pressure chemical vapor deposition on polycrystalline Ni films. Depending on the growth conditions, the thickness of the obtained h-BN film is between ∼5 and 50 nm. The h-BN grows continuously on the entire Ni surface and the region with uniform thickness can be up to 20 μm in lateral size which is only limited by the size of the Ni single crystal grains. The hexagonal structure was confirmed by both electron and X-ray diffraction. X-ray photoelectron spectroscopy shows the B/N atomic ratio to be 1:1.12. A large optical band gap (5.92 eV) was obtained from the photoabsorption spectra which suggest the potential usage of this h-BN film in optoelectronic devices.

Synthesis of Monolayer Hexagonal Boron Nitride on Cu Foil Using Chemical Vapor Deposition

Hexagonal boron nitride (h-BN) is very attractive for many applications, particularly, as protective coating, dielectric layer/substrate, transparent membrane, or deep ultraviolet emitter. In this work, we carried out a detailed investigation of h-BN synthesis on Cu substrate using chemical vapor deposition (CVD) with two heating zones under low pressure (LP). Previous atmospheric pressure (AP) CVD syntheses were only able to obtain few layer h-BN without a good control on the number of layers. In contrast, under LPCVD growth, monolayer h-BN was synthesized and time-dependent growth was investigated. It was also observed that the morphology of the Cu surface affects the location and density of the h-BN nucleation. Ammonia borane is used as a BN precursor, which is easily accessible and more stable under ambient conditions than borazine. The h-BN films are characterized by atomic force microscopy, transmission electron microscopy, and electron energy loss spectroscopy analyses. Our results suggest that the growth here occurs via surface-mediated growth, which is similar to graphene growth on Cu under low pressure. These atomically thin layers are particularly attractive for use as atomic membranes or dielectric layers/substrates for graphene devices.

Doping Single‐Layer Graphene with Aromatic Molecules

Recently discovered single-layer graphene (SLG) has attracted great attention not only because this perfect 2-dimensional carbon crystalline structure enables unprecedented explorations of fundamental physics but also because of its exciting potentials in the post-silicon nanoeletronics 1-6 . As the electrical properties of SLG films are very sensitive to the local perturbations such as from surface charges 7-9 and adsorbed gas molecules 6 , it is plausible that the electronic structures, hence the performance, of SLG may be tailored by molecular doping on its surface. Herein, we demonstrated that the electronic structures of SLG can be differentially modulated by doping from various aromatic molecules. We also show that a simple spectroscopic method based on the Raman 2D and G band frequency sampling can be used to distinguish the n- and p-doped SLG. Raman spectroscopy is a powerful tool to rapidly and nondestructively examine intrinsic physical properties of various carbon nanostructures, including flat and one-atom thick carbon crystalline layer (graphene monolayer), stacked graphenes (graphite), and roll-up graphene monolayer (single-walled carbon nanotube–SWNT). The characteristic G (~1580-1590 cm -1 ) and 2D (~2690-2710 cm -1 ) Raman bands are able to reveal the number of stacked graphene layer 10-12 and the changes in charge carrier concentration (or Fermi energy shift) induced by static electrical field 13-14 .

Preparation of MoS2-coated three-dimensional graphene networks for high-performance anode material in lithium-ion batteries.

A novel composite, MoS2 -coated three-dimensional graphene network (3DGN), referred to as MoS2 /3DGN, is synthesized by a facile CVD method. The 3DGN, composed of interconnected graphene sheets, not only serves as template for the deposition of MoS2 , but also provides good electrical contact between the current collector and deposited MoS2 . As a proof of concept, the MoS2 /3DGN composite, used as an anode material for lithium-ion batteries, shows excellent electrochemical performance, which exhibits reversible capacities of 877 and 665 mAh g(-1) during the 50(th) cycle at current densities of 100 and 500 mA g(-1) , respectively, indicating its good cycling performance. Furthermore, the MoS2 /3DGN composite also shows excellent high-current-density performance, e.g., depicts a 10(th) -cycle capacity of 466 mAh g(-1) at a high current density of 4 A g(-1).