Yumin Sim

Direct vapor phase growth process and robust photoluminescence properties of large area MoS2 layers

There has been growing research interest in the use of molybdenum disulfide in the fields of optoelectronics and energy harvesting devices, by virtue of its indirect-to-direct band gap tunability. However, obtaining large area thin films of MoS2 for future device applications still remains a challenge. In the present study, the amounts of the precursors (S and MoO3) were varied systematically in order to optimize the growth of highly crystalline and large area MoS2 layers by the chemical vapor deposition method. Careful control of the amounts of precursors was found to the key factor in the synthesis of large area highly crystalline flakes. The thickness of the layers was confirmed by Raman spectroscopy and atomic force microscopy. The optical properties and chemical composition were studied by photoluminescence (PL) and X-ray photoelectron spectroscopy. The emergence of strong direct excitonic emissions at 1.82 eV (A-exciton, with a normalized PL intensity of ∼55 × 103) and 1.98 eV (B-exciton, with a normalized PL intensity of ∼5 × 103) of the sample at room temperature clearly indicates the high luminescence quantum efficiency. The mobility of the films was found to be 0.09 cm2/(V·s) at room temperature. This study provides a method for the controlled synthesis of high-quality two-dimensional (2D) transition metal dichalcogenide materials, useful for applications in nanodevices, optoelectronics and solar energy conversion.

Near bandgap second-order nonlinear optical characteristics of MoS2 monolayer transferred on transparent substrates

We have investigated the second-order nonlinear optical (NLO) properties of CVD-grown MoS2 monolayer (ML) transferred onto transparent substrates such as fused silica and polyethylene terephthalate. The physical properties of the transferred MLs were characterized by optical and NLO methods. We measured the second-order susceptibility χ(2) in the spectral range of λ= 1064–1600 nm in which the corresponding second harmonic radiation resonates with the exciton levels. It was found that χ(2) is strongly enhanced by up to a factor of 5 near the A- and B-exciton levels due to two-photon resonance. The absolute χ(2) values of our samples determined by both reflection and transmission geometry are on par with that of as-grown MLs. Our results imply that the cavity-confinement scheme can be employed for maximizing the nonlinear optical efficiency of atomically thin transition metal dichalcogenides for transparent/flexible optoelectronics applications, especially when oriented stacking of transferred MLs are contr...

Effect of graphene oxide ratio on the cell adhesion and growth behavior on a graphene oxide-coated silicon substrate.

Control of living cells on biocompatible materials or on modified substrates is important for the development of bio-applications, including biosensors and implant biomaterials. The topography and hydrophobicity of substrates highly affect cell adhesion, growth, and cell growth kinetics, which is of great importance in bio-applications. Herein, we investigate the adhesion, growth, and morphology of cultured breast cancer cells on a silicon substrate, on which graphene oxides (GO) was partially formed. By minimizing the size and amount of the GO-containing solution and the further annealing process, GO-coated Si samples were prepared which partially covered the Si substrates. The coverage of GO on Si samples decreases upon annealing. The behaviors of cells cultured on two samples have been observed, i.e. partially GO-coated Si (P-GO) and annealed partially GO-coated Si (Annealed p-GO), with a different coverage of GO. Indeed, the spreading area covered by the cells and the number of cells for a given culture period in the incubator were highly dependent on the hydrophobicity and the presence of oxygenated groups on GO and Si substrates, suggesting hydrophobicity-driven cell growth. Thus, the presented method can be used to control the cell growth via an appropriate surface modification.