Yun Meng

Categorization of resistive switching of metal-Pr0.7Ca0.3MnO3-metal devices

Resistive switching (RS) characteristics of a Pr0.7Ca0.3MnO3 (PCMO) film sandwiched between a Pt bottom electrode and top electrodes (TE) made of various metals are found to belong to two categories. Devices with TE made of Al, Ti, and Ta exhibit a large I-V hysteresis loop and bipolar RS, but those with TE made of Pt, Ag, Au, and Cu do not. Transmission electron microscopy reveals that a thin metal-oxide layer formed at the interface between the former group of TE and PCMO, but not for the latter group of TE. Analysis shows that the categorization depends on the Gibbs free energy of oxidation of the TEs with respect to that of PCMO.

Rotatable magnetic anisotropy of CoO/Fe/Ag(001) in ultrathin regime of the CoO layer

CoO/Fe thin films were grown epitaxially onto vicinal Ag(001) and investigated using magneto-optic Kerr effect, x-ray magnetic circular dichroism (XMCD), and x-ray magnetic linear dichroism (XMLD) techniques. We show that the CoO film in the ultrathin regime does not induce a uniaxial magnetic anisotropy but a coercivity enhancement. This result provides a mechanism for the microscopic origin of the rotatable magnetic anisotropy. XMLD measurement further reveals that the underlying mechanism is that the CoO spins are totally rotatable in the ultrathin regime to follow the Fe magnetization.

Multi-level coding-recoding by ultrafast phase transition on Ge 2 Sb 2 Te 5 thin films

Quickly switching among different states (levels) is crucial for reconfigurable metamaterials and devices. In this study, the dynamics of establishment and transformation of five amorphous or near-amorphous intermediate states with obvious optical contrasts on Ge2Sb2Te5 phase-change thin films driven by ultrashort laser pulses were investigated using real-time reflectivity measurements. The reversible coding-recoding among the five optical levels was realized by using single-shot picosecond laser pulses with designed fluences. The optical constants, crystalline states and surface morphologies before and after ultrafast multi-level coding were also compared and analyzed. These results may lay a foundation for the further design and application of dynamically reconfigurable optical/photonic devices.

Damage to epitaxial GaN layer on Al 2 O 3 by 290-MeV 238 U 32+ ions irradiation

Micro-structural characteristics and electrical properties of an n-type GaN epilayer on Al2O3 irradiated by 290-MeV 238U32+ ions to various fluences were investigated using atomic force microscopy (AFM), scanning electron microscopy (SEM), high-resolution X-ray diffraction (HRXRD), and Raman scattering spectroscopy. AFM images show that the nano-hillocks generated, and the diameter and density of the nano-hillocks, increase obviously with increasing ion fluence, accompanied by an increase in surface roughness. SEM images display that the Al, O, and C elements appear on the GaN surface, along with a spiral-like, layered volcanic-cone structure formed at the highest-fluence irradiation. HRXRD reveals that the dislocation density increases, as the lattices gradually expand, and that Ga2O3 was produced with increasing ion fluence. Raman scattering spectra show that no N and Ga vacancies were produced, the free-carrier concentration decreases, while its mobility first increases and then exhibits a significant reduction with increasing ion fluence.

Design of a 4-level active photonics phase change switch using VO2 and Ge2Sb2Te5

The objective of this work is to design and demonstrate multilevel optical switches by combining different phase change materials. Ge2Sb2Te5 and VO2 nanolayer structures were designed to maximize the optical contrast between four different reflective states. These different optical states arise due to the independent structural phase transitions of VO2 and Ge2Sb2Te5 at different temperatures. The transfer matrix method was used to model Fresnel reflection for each structural phase combination and then to optimize the VO2 and Ge2Sb2Te5 layer thicknesses, which were found to be 70 nm and 50 nm. These multilevel optical switching results provide further possibilities to design composite materials for applications in active and programmable photonics.The objective of this work is to design and demonstrate multilevel optical switches by combining different phase change materials. Ge2Sb2Te5 and VO2 nanolayer structures were designed to maximize the optical contrast between four different reflective states. These different optical states arise due to the independent structural phase transitions of VO2 and Ge2Sb2Te5 at different temperatures. The transfer matrix method was used to model Fresnel reflection for each structural phase combination and then to optimize the VO2 and Ge2Sb2Te5 layer thicknesses, which were found to be 70 nm and 50 nm. These multilevel optical switching results provide further possibilities to design composite materials for applications in active and programmable photonics.