Yun Seok Nam

Amine-Based Polar Solvent Treatment for Highly Efficient Inverted Polymer Solar Cells

The interfacial dipolar polarization in inverted structure polymer solar cells, which arises spontaneously from the absorption of ethanolamine end groups, such as amine and hydroxyl groups on ripple-structure zinc oxide (ZnO-R), lowers the contact barrier for electron transport and extraction and leads to enhanced electron mobility, suppression of bimolecular recombination, reduction of the contact resistance and series resistance, and remarkable enhancement of the power conversion efficiency.

Highly efficient inverted polymer light-emitting diodes using surface modifications of ZnO layer

Organic light-emitting diodes have been recently focused for flexible display and solid-state lighting applications and so much effort has been devoted to achieve highly efficient organic light-emitting diodes. Here, we improve the efficiency of inverted polymer light-emitting diodes by introducing a spontaneously formed ripple-shaped nanostructure of ZnO and applying an amine-based polar solvent treatment to the nanostructure of ZnO. The nanostructure of the ZnO layer improves the extraction of the waveguide modes inside the device structure, and a 2-ME+EA interlayer enhances the electron injection and hole blocking in addition to reducing exciton quenching between the polar-solvent-treated ZnO and the emissive layer. Therefore, our optimized inverted polymer light-emitting diodes have a luminous efficiency of 61.6 cd A(-1) and an external quantum efficiency of 17.8%, which are the highest efficiency values among polymer-based fluorescent light-emitting diodes that contain a single emissive layer.

Amine‐Based Interfacial Molecules for Inverted Polymer‐Based Optoelectronic Devices

The change in the work function (WF) of ZnO with amine-based interfacial mole-cules (AIM) can be controlled by the number of amine groups. AIM with a larger amine group can induce a stronger interface dipole between the amine groups and the ZnO surface, leading to a greater reduction of the WF.

Improved performance of perovskite light-emitting diodes using a PEDOT:PSS and MoO3 composite layer

We demonstrate the enhanced performance of perovskite light-emitting diodes (PeLEDs) using a solution-processable MoO3 and PEDOT:PSS (PEDOT:MoO3) composite layer as the hole transport layer (HTL). The PEDOT:MoO3 composite layer presents improved hole injection through a reduction in the contact barrier between the HTL and the CH3NH3PbBr3 layer and enhanced crystallinity of the perovskite film. The optimized PeLEDs with the PEDOT:MoO3 composite film showed enhanced external quantum efficiency (EQE) and maximum luminous efficiency, compared to a PeLED using a pristine PEDOT:PSS layer.

Highly efficient polymer light-emitting diodes using graphene oxide-modified flexible single-walled carbon nanotube electrodes

We present flexible polymer light-emitting diodes (FPLEDs) using graphene oxide-modified single-walled carbon nanotube (GO-SWCNT) films as an anode on polyethylene terephthalate (PET) substrates. The electrode of GO-SWCNTs used in this study shows quite a low sheet resistance of ∼75 Ω per square at 65% (at 550 nm) optical transparency with resistance to bending fatigue. The small-sized GO nanosheets onto the SWCNT network films are significantly effective in reducing the sheet resistance and the surface porosity of the SWCNT network films without sacrificing the transmittance. Moreover, the top layer of the large-sized GO nanosheets are crucial for high device efficiency to reduce the roughness of the SWCNT surface and enhance the wettability with PEDOT:PSS. The optimized FPLED using a GO-SWCNT electrode shows a maximum luminous efficiency of 5.0 cd A−1 (at 9.2 V), power efficiency of 2.4 lm W−1 (at 5.6 V), external quantum efficiency 1.9% (at 9.0 V) and turn-on voltage (2.0 V), which is comparable to conventional PLEDs using an indium-tin-oxide (ITO) electrode (a maximum luminous efficiency of 6.2 cd A−1 (at 9.4 V), power efficiency of 2.6 lm W−1 (at 5.8 V), external quantum efficiency 2.3% (at 9.0 V) and turn-on voltage (2.0 V)). This result confirms that a GO-SWCNT electrode can be efficiently used to replace ITO for flexible optoelectronic devices.

Highly efficient flexible optoelectronic devices using metal nanowire-conducting polymer composite transparent electrode

Here, we report a comprehensive analysis of the electrical, optical, mechanical, and surface morphological properties of composite nanostrutures based on silver nanowires (AgNW) and PEDOT:PSS conducting polymer for the use as flexible and transparent electrodes. Compared to ITO or the single material of AgNW or PEDOT:PSS, the AgNW/PEDOT:PSS composite electrode showed high electrical conductivity with a low sheet resistance of 26.8 Ω/sq at 91% transmittance (at 550 nm), improves surface smoothness, and enhances mechanical properties assisted by an amphiphilic fluoro-surfactant. The polymeric light-emitting diodes (PLEDs) and organic solar cells (OSCs) using the AgNW/PEDOT:PSS composite electrode showed higher device performances than those with AgNW and PEDOT:PSS electrodes and excellent flexibility under bending test. These results indicates that the AgNW/PEDOT:PSS composite presented is a good candidate as next-generation transparent elelctrodes for applications into flexible optoelectronic devices.

Large Pulsed Electron Beam Welded Percolation Networks of Silver Nanowires for Transparent and Flexible Electrodes

Mechanical properties of transparent electrodes, including flexibility, are important in flexible electronics for sustaining electrical conductivity under bending with small radius of curvature. Low contact resistance of junctions in metal nanowire percolation networks is the most important factor to produce electrodes with excellent optical, electrical and mechanical performance. Here, we report the fabrication of welded silver nanowire percolation networks using large pulsed electron beam (LPEB) irradiation as a welding process of silver nanowires (AgNWs). It results in modification of electrical and mechanical properties because of the low contact resistance at welded junctions. Consequently, the flexible and transparent AgNW electrodes fabricated by LPEB irradiation showed lower sheet resistance of 12.63 Ω sq(-1) at high transmittance of 93% (at 550 nm), and superb mechanical flexibility, compared with other AgNW electrodes prepared by thermal treatement and without any treatment. Polymer light-emitting diodes (PLEDs) using AgNWs by LPEB irradiation were fabricated to confirm that the AgNW electrode by LPEB irradiation was able to become alternative to indium tin oxide (ITO) and they showed good device performance as a maximum luminous efficiency of 7.37 cd A(-1), and excellent mechanical flexibility under bending with small radius of curvature.

Growth of Nanosized Single Crystals for Efficient Perovskite Light-Emitting Diodes

Organic-inorganic hybrid perovskites are emerging as promising emitting materials due to their narrow full-width at half-maximum emissions, color tunability, and high photoluminescence quantum yields (PLQYs). However, the thermal generation of free charges at room temperature results in a low radiative recombination rate and an excitation-intensity-dependent PLQY, which is associated with the trap density. Here, we report perovskite films composed of uniform nanosized single crystals (average diameter = 31.7 nm) produced by introducing bulky amine ligands and performing the growth at a lower temperature. By effectively controlling the crystal growth, we maximized the radiative bimolecular recombination yield by reducing the trap density and spatially confining the charges. Finally, highly bright and efficient green emissive perovskite light-emitting diodes that do not suffer from electroluminescence blinking were achieved with a luminance of up to 55 400 cd m-2, current efficiency of 55.2 cd A-1, and external quantum efficiency of 12.1%.

Control of Interface Defects for Efficient and Stable Quasi-2D Perovskite Light-Emitting Diodes Using Nickel Oxide Hole Injection Layer

Abstract Metal halide perovskites (MHPs) have emerged as promising materials for light‐emitting diodes owing to their narrow emission spectrum and wide range of color tunability. However, the low exciton binding energy in MHPs leads to a competition between the trap‐mediated nonradiative recombination and the bimolecular radiative recombination. Here, efficient and stable green emissive perovskite light‐emitting diodes (PeLEDs) with an external quantum efficiency of 14.6% are demonstrated through compositional, dimensional, and interfacial modulations of MHPs. The interfacial energetics and optoelectronic properties of the perovskite layer grown on a nickel oxide (NiOx) and poly(3,4‐ethylenedioxythiophene):polystyrene sulfonate hole injection interfaces are investigated. The better interface formed between the NiOx/perovskite layers in terms of lower density of traps/defects, as well as more balanced charge carriers in the perovskite layer leading to high recombination yield of carriers are the main reasons for significantly improved device efficiency, photostability of perovskite, and operational stability of PeLEDs.