Yung-Sup Yoon

Thermoelectric properties of thermoelectric modules consisted of porous FeSi2 based compounds fabricated by pressureless sintering

Abstract Single thermoelectric modules, which consist of porous p-type Fe 0.9 Mn 0.1 Si 2 and n-type Fe 0.94 Co 0.06 Si 2 compounds prepared by pressureless sintering, were fabricated and their thermoelectric properties were measured. It was found that the rate of the phase transition to β-FeSi 2 for the Fe 0.94 Co 0.06 Si 2 compound was faster than that for the Fe 0.9 Mn 0.1 Si 2 compound. The power factor of p- and n-type compounds fabricated with coarse powders (

A Study on the Orientation and the Roughness with the Deposition Condition of AIN Thin Films Prepared by RF Magnetron Sputtering Method

We fabricated AIN thin film by using RF magnetron sputtering and studied the structural characteristic of AIN thin film with the change of the deposition conditions such as Ar/ flow ratio, working pressure, and the distance between substrate and target. The orientation and surface roughness of AIN thin film were studied by using XRD and AFM. We can not identify the orientation of the thin film deposited in Ar, while we obtained the (l00) orientation of the thin film with the addition of . Especially, the thin film deposited at 18/2 (seem) of Ar/ flow ratio exhibited to be the most (100) oriented. The (100) orientation of thin film becomes weaker as the working pressure becomes higher. The further distance between substrate and target is stronger the (100) orientation of the thin film, but the (100) orientation becomes weaker and (002) orientation started to appear as the distance is shorter. The surface roughness of the thin film deposited at 50 in Ar only is 1.1 nm, while very smooth thin film of 0.4～0.6 nm is obtained with the addition of .