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Dive into the research topics where Yunhui Chen is active.

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Featured researches published by Yunhui Chen.


Optics Letters | 2013

Enhancement of terahertz radiation from GaP emitters by subwavelength antireflective micropyramid structures

Xiaokun Hu; Yanfeng Li; Fengzhou Fang; Xian Li; Jiang Li; Yunhui Chen; Xiaodong Zhang; Lu Chai; Chingyue Wang; Andrey B. Fedotov; Aleksei M. Zheltikov

Subwavelength antireflective micropyramid structures, designed by rigorous coupled-wave analysis and fabricated by precision micromachining, are used to enhance the terahertz (THz) radiation output of optical rectification in GaP crystal-based emitters. An average 16% increase in the THz radiation power emitted by a 3 mm GaP crystal is experimentally demonstrated using an antireflective micropyramid grating with a period of 60 μm and a base angle of 55.5°. Optimized pyramidal-frustum gratings are shown to operate as highly efficient antireflective structures within an ultrabroadband range of 0.5-5 THz.


Archive | 2015

Nanometric cutting of crystal surfaces modified by ion implantation

Fengzhou Fang; Yunhui Chen

Single-crystal materials are widely used in optics and electronics field and are essential in condensed matter physics andmaterials science researches. However, the hard and brittle nature of the materials prevents it from manufacturing intricate features and optical quality surfaces. Nanometric cutting assisted with ion implantation surface modification method reduces the fracture and tool wear during machining by improving the surface mechanical properties. The mechanism, techniques, and applications of this method are specifically explained in the chapter.


Applied Mechanics and Materials | 2014

Molecular dynamics simulation of the deformation of single crystal gallium arsenide

Yunhui Chen; Han Huang; Mingyuan Lu; Yueqin Wu; Fengzhou Fang; Xiaotang Hu

Three-dimensional molecular dynamics (3D MD) simulation was carried out to investigate the deformation of single crystal gallium arsenide (GaAs) during nanoindentation. Tersoff potential was used to simulate the atomistic interaction under an extremely low load of indentation. The coordination number and atomic displacement were studied and the cross-sectional profiles of the simulated indent were examined. The simulation results revealed that the lattice deformation of GaAs was influenced by polarity, showing distinct patterns on different crystalline planes. Slip band and dislocation were found to be the dominant deformation phenomena.


Cirp Annals-manufacturing Technology | 2011

Nanometric cutting of single crystal silicon surfaces modified by ion implantation

Fengzhou Fang; Yunhui Chen; Xueqian Zhang; Xiaotang Hu; Guoxiong Zhang


Science China-technological Sciences | 2014

MD simulation of nanometric cutting of copper with and without water lubrication

Yunhui Chen; Huang Han; Fengzhou Fang; Xiaotang Hu


Archive | 2009

Particle beam assisted single-crystal fragile material ultraprecise processing method

Fengzhou Fang; Yunhui Chen; Zongwei Xu; Zhongjun Chou; Xiaodong Zhang; Tengfei Dai; Xiaotang Hu


Acta Physica Sinica | 2013

Theoretical design and experiment study of sub-wavelength antireflective micropyramid structures on THz emitters

Xiaokun Hu; Jiang Li; Xian Li; Yunhui Chen; Yanfeng Li; Lu Chai; Qingyue Wang


Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms | 2012

Surface modification for brittle monocrystalline materials by MeV ions

Yunhui Chen; Fengzhou Fang; Zongwei Xu; Xueqian Zhang; Xiaotang Hu


Transactions of Tianjin University | 2014

Molecular dynamics of nanometric processing of ion implanted monocrystalline silicon surfaces

Yunhui Chen; Fengzhou Fang; Xiaodong Zhang; Xiaotang Hu


Archive | 2010

Proton beam assisted ultraprecise processing method for processing single-crystal fragile material

Fengzhou Fang; 房丰洲; Yunhui Chen; 陈耘辉; Zongwei Xu; 徐宗伟; Zhongjun Qiu; 仇中军; Xiaodong Zhang; 张效栋; Tengfei Dai; 代腾飞; Xiaotang Hu; 胡小唐

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