Yunkun Xie

Computational investigation of half-Heusler compounds for spintronics applications

The authors investigate the properties of 378 half-Heusler compounds using density functional theory with the goal of identifying promising candidates for spintronic applications, e.g. half-metals. Although DFT has often been applied to the search for half-metals, this study may be the most comprehensive attempt to identify which of the compounds predicted by DFT to be half-metals are likely to be fabricated. The calculated formation energy of each of the 378 potential half Heuslers was compared to that of all competing phases and combination of phases in the Open Quantum Materials Database. Those semiconductors, half-metals, and near half-metals within an empirically determined 0.1 eV/atom hull distance margin for neglected effects were deemed of interest for further experimental investigation.

Fokker—Planck Study of Parameter Dependence on Write Error Slope in Spin-Torque Switching

This paper analyzes write errors in spin torque switching due to thermal fluctuations in a system with Perpendicular Magnetic Anisotropy (PMA). Prior analytical and numerical methods are summarized, a physics based Fokker-Planck Equation (FPE) chosen for its computational efficiency and broad applicability to all switching regimes. The relation between write error slope and material parameters is discussed in detail to enable better device engineering and optimization. Finally a 2D FPE tool is demonstrated that extends the applicability of FPE to write error in non PMA systems with built-in asymmetry. Keywords—PMA, spin transfer torque, 2D Fokker-Planck, write error rate.This paper analyzes write errors in spin-torque switching due to thermal fluctuations in a system with perpendicular magnetic anisotropy. Prior analytical and numerical methods are summarized; a physics-based general 2-D Fokker-Planck equation (FPE) is solved numerically. Due to its computational efficiency and broad applicability to all switching regimes and system symmetries, the 2-D FPE has been used to study the relation between write error slope and material parameters as well as some emerging switching schemes.

Energy-delay-reliability of present and next generation STT-RAM technology

STT-RAMs show the promise to be the universal memory device with applications in embedded devices. There are outstanding challenges that need to be addressed before a wide-scale adoption of this technology happens. The solution to these challenges lie in integration of emerging high performance spintronic materials as well as clever circuit based techniques to operate these devices at their peak performance. In this work we present a material-device-circuit co-design framework that connects the properties of materials and transport physics to circuits and systems performance. To illustrate the use of this framework we study present and next generation STT-RAM technology in terms of energy-delay-reliability performance metrics and suggest possible directions for future generation devices.

Spintronic signatures of Klein tunneling in topological insulators

Klein tunneling, the perfect transmission of normally incident Dirac electrons across a potential barrier, has been widely studied in graphene and explored to design switches, albeit indirectly. We show that Klein tunneling maybe easier to detect for spin-momentum locked electrons crossing a PN junction along a three dimensional topological insulator surface. In these topological insulator PN junctions (TIPNJs), the spin texture and momentum distribution of transmitted electrons can be measured electrically using a ferromagnetic probe for varying gate voltages and angles of current injection. Based on transport models across a TIPNJ, we show that the asymmetry in the potentiometric signal between PP and PN junctions and its overall angular dependence serve as a direct signature of Klein tunneling.

From materials to systems: a multiscale analysis of nanomagnetic switching

With the increasing demand for low-power electronics, nanomagnetic devices have emerged as strong potential candidates to complement present day transistor technology. A variety of novel switching effects such as spin torque and giant spin Hall offer scalable ways to manipulate nanosized magnets. However, the low intrinsic energy cost of switching spins is often compromised by the energy consumed in the overhead circuitry in creating the necessary switching fields. Scaling brings in added concerns such as the ability to distinguish states (readability) and to write information without spontaneous backflips (reliability). A viable device must ultimately navigate a complex multi-dimensional material and design space defined by volume, energy budget, speed, and a target read–write–retention error. In this paper, we review the major challenges facing nanomagnetic devices and present a multiscale computational framework to explore possible innovations at different levels (material, device, or circuit), along with a holistic understanding of their overall energy delay–reliability trade-off.