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Dive into the research topics where Yuran Niu is active.

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Featured researches published by Yuran Niu.


Physical Review Letters | 2014

Direct Observation of Decoupled Structural and Electronic Transitions and an Ambient Pressure Monocliniclike Metallic Phase of VO_{2}.

J Laverock; S Kittiwatanakul; Alexei Zakharov; Yuran Niu; B Chen; S A Wolf; J W Lu; Kevin E. Smith

We report the simultaneous measurement of the structural and electronic components of the metal-insulator transition (MIT) of VO2 using electron and photoelectron spectroscopies and microscopies. We show that these evolve over different temperature scales, and are separated by an unusual monocliniclike metallic phase. Our results provide conclusive evidence that the new monocliniclike metallic phase, recently identified in high-pressure and nonequilibrium measurements, is accessible in the thermodynamic transition at ambient pressure, and we discuss the implications of these observations on the nature of the MIT in VO2.


Small | 2018

Metallic contact between MoS2 and Ni via Au Nanoglue

Xinying Shi; Sergei Posysaev; M. Huttula; Vladimir Pankratov; J. Hoszowska; Jean Claude Dousse; Faisal Zeeshan; Yuran Niu; Alexei Zakharov; Taohai Li; Olga Miroshnichenko; Meng Zhang; Xiao Wang; Zhongjia Huang; Sami Saukko; Diego López González; Sebastiaan van Dijken; M. Alatalo; Wei Cao

A critical factor for electronics based on inorganic layered crystals stems from the electrical contact mode between the semiconducting crystals and the metal counterparts in the electric circuit. Here, a materials tailoring strategy via nanocomposite decoration is carried out to reach metallic contact between MoS2 matrix and transition metal nanoparticles. Nickel nanoparticles (NiNPs) are successfully joined to the sides of a layered MoS2 crystal through gold nanobuffers, forming semiconducting and magnetic NiNPs@MoS2 complexes. The intrinsic semiconducting property of MoS2 remains unchanged, and it can be lowered to only few layers. Chemical bonding of the Ni to the MoS2 host is verified by synchrotron radiation based photoemission electron microscopy, and further proved by first-principles calculations. Following the systems band alignment, new electron migration channels between metal and the semiconducting side contribute to the metallic contact mechanism, while semiconductor-metal heterojunctions enhance the photocatalytic ability.


Applied Physics Letters | 2014

Effects of a modular two-step ozone-water and annealing process on silicon carbide graphene

Matthew J. Webb; C. M. Polley; Kai Dirscherl; Gregory Burwell; Pål Palmgren; Yuran Niu; Anna Lundstedt; Alexei Zakharov; Owen J. Guy; T. Balasubramanian; Rositsa Yakimova; Helena Grennberg

By combining ozone and water, the effect of exposing epitaxial graphene on silicon carbide to an aggressive wet-chemical process has been evaluated after high temperature annealing in ultra high vacuum. The decomposition of ozone in water produces a number of oxidizing species, however, despite long exposure times to the aqueous-ozone environment, no graphene oxide was observed after the two-step process. The systems were comprehensively characterized before and after processing using Raman spectroscopy, core level photoemission spectroscopy, and angle resolved photoemission spectroscopy together with low energy electron diffraction, low energy electron microscopy, and atomic force microscopy. In spite of the chemical potential of the aqueous-ozone reaction environment, the graphene domains were largely unaffected raising the prospect of employing such simple chemical and annealing protocols to clean or prepare epitaxial graphene surfaces.


Ultramicroscopy | 2017

Nanoscale analysis of the oxidation state and surface termination of praseodymium oxide ultrathin films on ruthenium(0001)

Jan Ingo Flege; Jon-Olaf Krisponeit; Jan Höcker; Michael Hoppe; Yuran Niu; A. Zakharov; Andreas Schaefer; J. Falta; E. E. Krasovskii

The complex structure and morphology of ultrathin praseodymia films deposited on a ruthenium(0001) single crystal substrate by reactive molecular beam epitaxy is analyzed by intensity-voltage low-energy electron microscopy in combination with theoretical calculations within an ab initio scattering theory. A rich coexistence of various nanoscale crystalline surface structures is identified for the as-grown samples, notably comprising two distinct oxygen-terminated hexagonal Pr2O3(0001) surface phases as well as a cubic Pr2O3(111) and a fluorite PrO2(111) surface component. Furthermore, scattering theory reveals a striking similarity between the electron reflectivity spectra of praseodymia and ceria due to very efficient screening of the nuclear charge by the extra 4f electron in the former case.


Materials Research Express; 3(10), no 106506 (2016) | 2016

Surface development of an aluminum brazing sheet during heating studied by XPEEM and XPS

Lisa Rullik; Florian Bertram; Yuran Niu; Jonas Evertsson; T Stenqvist; Alexei Zakharov; Anders Mikkelsen; Edvin Lundgren

X-ray photoelectron emission microscopy (XPEEM) was used in combination with other microscopic and spectroscopic techniques to follow the surface development of an aluminum brazing sheet during heating. The studied aluminum alloy sheet is a composite material designed for vacuum brazing. Its surface is covered with a native aluminum oxide film. Changes in the chemical state of the alloying elements and the composition of the surface layer were detected during heating to the melting temperature. It was found that Mg segregates to the surface upon heating, and the measurements indicate the formation of magnesium aluminate. During the heating the aluminum oxide as well as the silicon is observed to disappear from the surface. Our measurements is in agreement with previous studies observing a break-up of the oxide and the outflow of the braze cladding onto the surface, a process assisted by the Mg segregation and reaction with surface oxygen. This study also demonstrates how XPEEM can be utilized to study complex industrial materials.


Materials | 2015

Soft X-ray Exposure Promotes Na Intercalation in Graphene Grown on Si-Face SiC

Somsakul Watcharinyanon; Chao Xia; Yuran Niu; Alexei Zakharov; L.I. Johansson; Rositza Yakimova; Chariya Virojanadara

An investigation of how electron/photon beam exposures affect the intercalation rate of Na deposited on graphene prepared on Si-face SiC is presented. Focused radiation from a storage ring is used for soft X-ray exposures while the electron beam in a low energy electron microscope is utilized for electron exposures. The microscopy and core level spectroscopy data presented clearly show that the effect of soft X-ray exposure is significantly greater than of electron exposure, i.e., it produces a greater increase in the intercalation rate of Na. Heat transfer from the photoelectrons generated during soft X-ray exposure and by the electrons penetrating the sample during electron beam exposure is suggested to increase the local surface temperature and thus the intercalation rate. The estimated electron flux density is 50 times greater for soft X-ray exposure compared to electron exposure, which explains the larger increase in the intercalation rate from soft X-ray exposure. Effects occurring with time only at room temperature are found to be fairly slow, but detectable. The graphene quality, i.e., domain/grain size and homogeneity, was also observed to be an important factor since exposure-induced effects occurred more rapidly on a graphene sample prepared in situ compared to on a furnace grown sample.


Journal of Applied Physics | 2015

Effects of aluminum on epitaxial graphene grown on C-face SiC

Chao Xia; L.I. Johansson; Yuran Niu; Lars Hultman; Chariya Virojanadara

The effects of Al layers deposited on graphene grown on C-face SiC substrates are investigated before and after subsequent annealing using low energy electron diffraction (LEED), photoelectron spectroscopy, and angle resolved photoemission. As-deposited layers appear inert. Annealing at a temperature of about 400 °C initiates migration of Al through the graphene into the graphene/SiC interface. Further annealing at temperatures from 500 °C to 700 °C induces formation of an ordered compound, producing a two domain √7× √7R19° LEED pattern and significant changes in the core level spectra that suggest formation of an Al-Si-C compound. Decomposition of this compound starts after annealing at 800 °C, and at 1000 °C, Al is no longer possible to detect at the surface. On Si-face graphene, deposited Al layers did not form such an Al-Si-C compound, and Al was still detectable after annealing above 1000 °C.


Carbon | 2014

High thermal stability quasi-free-standing bilayer graphene formed on 4H–SiC(0 0 0 1) via platinum intercalation

Chao Xia; L.I. Johansson; Yuran Niu; Alexei Zakharov; Erik Janzén; Chariya Virojanadara


Surface Science | 2015

A well-ordered surface oxide on Fe(110)

Markus Soldemo; Yuran Niu; Alexei Zakharov; Edvin Lundgren; Jonas Weissenrieder


Applied Surface Science | 2016

Surface engineering of SiC via sublimation etching

Valdas Jokubavicius; Gholam Reza Yazdi; Ivan Gueorguiev Ivanov; Yuran Niu; Alexei Zakharov; Tihomir Iakimov; Mikael Syväjärvi; Rositsa Yakimova

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Chao Xia

Linköping University

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M. Alatalo

Lappeenranta University of Technology

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