Yuriy Fedoryshyn

Quantum Cascade Detectors

This paper gives an overview on the design, fabrication, and characterization of quantum cascade detectors. They are tailorable infrared photodetectors based on intersubband transitions in semiconductor quantum wells that do not require an external bias voltage due to their asymmetric conduction band profile. They thus profit from favorable noise behavior, reduced thermal load, and simpler readout circuits. This was demonstrated at wavelengths from the near infrared at 2 mum to THz radiation at 87 mum using different semiconductor material systems.

Electrically Controlled Plasmonic Switches and Modulators

Plasmonic modulators and switches have recently attracted considerable attention because they offer ultracompact size, high bandwidths, and potentially low-power consumption. In this paper, we review and compare the current state of the art of plasmonic switches and discuss the various physical phenomena that are used to perform efficient switching. More precisely, we discuss plasmonic devices based on the thermal effect, the free carrier dispersion effect, the Pockels effect, phase change materials and switching caused by electrochemical metallization.

Direct Conversion of Free Space Millimeter Waves to Optical Domain by Plasmonic Modulator Antenna

A scheme for the direct conversion of millimeter and THz waves to optical signals is introduced. The compact device consists of a plasmonic phase modulator that is seamlessly cointegrated with an antenna. Neither high-speed electronics nor electronic amplification is required to drive the modulator. A built-in enhancement of the electric field by a factor of 35 000 enables the direct conversion of millimeter-wave signals to the optical domain. This high enhancement is obtained via a resonant antenna that is directly coupled to an optical field by means of a plasmonic modulator. The suggested concept provides a simple and cost-efficient alternative solution to conventional schemes where millimeter-wave signals are first converted to the electrical domain before being up-converted to the optical domain.

108 Gbit/s Plasmonic Mach–Zehnder Modulator with > 70-GHz Electrical Bandwidth

We report on high-extinction-ratio, ultrafast plasmonic Mach-Zehnder modulators. We demonstrate data modulation at line rates up to 72 Gbit/s (BPSK) and 108 Gbit/s (4-ASK). The driving voltages are Ud = 4 and 2.5 Vp for 12.5 and 25 μm short devices, respectively. The frequency response shows no bandwidth limitations up to 70 GHz. Static characterizations indicate extinction ratios > 25 dB.

Characterization of Si volume- and delta-doped InGaAs grown by molecular beam epitaxy

Bulk InGaAs layers were grown at 400 °C lattice-matched to InP semi-insulating substrates by molecular beam epitaxy. Si doping of the layers was performed by applying volume- and delta-doping techniques. The samples were characterized by capacitance-voltage, van der Pauw–Hall, secondary ion mass spectroscopy and photoluminescence measurements. Good agreement in terms of dependence of mobility and Burstein–Moss shift shift on doping concentration in samples doped by the two different techniques was obtained. Amphoteric behavior of Si was observed at doping concentrations higher than ∼2.9×1019 cm−3 in both delta- and volume-doped samples. Degradation of InGaAs crystalline quality occurred in samples with Si concentrations higher than ∼4×1019 cm−3.

Plasmonic modulator with >170 GHz bandwidth demonstrated at 100 GBd NRZ

We demonstrate a plasmonic Mach-Zehnder (MZ) modulator with a flat frequency response exceeding 170 GHz. The modulator comprises two phase modulators exploiting the Pockels effect of an organic electro-optic material in plasmonic slot waveguides. We further show modulation at 100 GBd NRZ and 60 GBd PAM-4. The electrical drive signals were generated using a 100 GSa/s digital to analog converter (DAC). The high-speed and small-scale devices are relevant for next-generation optical interconnects.

High speed plasmonic modulator array enabling dense optical interconnect solutions

Plasmonic modulators might pave the way for a new generation of compact low-power high-speed optoelectronic devices. We introduce an extremely compact transmitter based on plasmonic Mach-Zehnder modulators offering a capacity of 4 × 36 Gbit/s on a footprint that is only limited by the size of the high-speed contact pads. The transmitter array is contacted through a multicore fiber with a channel spacing of 50 μm.

Plasmonic Organic Hybrid Modulators—Scaling Highest Speed Photonics to the Microscale

Complementing plasmonic slot waveguides with highly nonlinear organic materials has rendered a new generation of ultracompact active nanophotonic components that are redefining the state of the art. In this paper, we review the fundamentals of this so-called plasmonic- organic-hybrid (POH) platform. Starting from simple phase shifters to the most compact IQ modulators, we introduce key devices of high-speed data communications. For instance, all-plasmonic Mach-Zehnder modulators (MZMs) are reviewed and long-term prospects are discussed. This kind of modulator already features unique properties such as a small footprint (<; 20 μm2), a large electro-optic bandwidth (> 110 GHz), a small energy consumption (~25 fJ/b), a large extinction ratio (> 25 dB) in combination with a record small voltage-length product of 40 Vμm. Finally, as an example for seamless integration we introduce novel plasmonic IQ modulators. With such modulators we show the generation of advanced modulation formats (QPSK, 16-QAM) on footprints as small as 10 μm × 75 μm. This demonstration ultimately shows how plasmonics can be used to control both phase and amplitude of an optical carrier on the microscale with reasonably low losses.

Optical waveguide structure for an all-optical switch based on intersubband transitions in InGaAs/AlAsSb quantum wells

A vertical slab waveguide design for an all-optical switch based on intersubband transitions in molecular beam epitaxy (MBE)-grown coupled double InGaAs/AlAsSb quantum well (QW) structures is presented. We propose a waveguide with two surrounding high refractive index InGaAsP guiding layers, which confine the optical mode in the low refractive index QW region and thus enable light guiding with low contrast InP cladding layers. We investigate the proposed concept by means of 1D simulations of several waveguide configurations. We confirm its validity by fabricating deeply etched waveguiding structures using either wet- or dry-etching technologies. Optical losses as low as 13.5 dB cm(-1) and 12.8 dB cm(-1) were measured for TM- and TE-polarized light, respectively.

High-speed plasmonic Mach-Zehnder modulator in a waveguide

We demonstrate a plasmonic Mach-Zehnder-modulator with a record-small length of 10 μm. The modulator is fully integrated into a single silicon waveguide and operates at 72 Gbit s^-1. A voltage-length product as low as V_πL=50 ±5 Vpm is found.