Yusuf Atici

Investigation of structural and electrical properties of Zirconium dioxide thin films deposited by reactive RF sputtering technique

ABSTRACT ZrO2 thin films with different thicknesses (400 nm, 500 nm, 600 nm) were deposited by reactive RF magnetron sputtering technique, on n-type Silicon (100) substrate at 200°C applying 125 W power ratin`g. The micro structural properties of thin films were obtained by Scanning Electron Microscope and it was observed that the films were grown successfully in the form of big grains formed by the accumulation of small particles. It was seen that the size of grains changed with the increase of film thickness. Energy-dispersive X-Ray spectroscopy was used to determine the chemical compositions of samples. The crystal structures of ZrO2 samples were analyzed by X-ray diffraction technique. In addition, the Current-Voltage and Capacitance-Voltage measurements were completed to investigate the electrical properties of samples.

Influence of annealing time on the physical properties of reactively sputtered CuO thin film

Polycrystalline CuO thin film was deposited by reactive RF magnetron sputtering technique. The samples obtained from CuO film were annealed in air for different times. The structural, compositional and optical properties of unannealed and annealed samples were characterized. The SEM studies showed that the samples have a homogeneous surface morphology. All of the samples exhibited strong

Study of threading dislocations in the plan-view sample of SiGe/Si(001) superlattices by transmission electron microscopy

(\bar{1}11)

Studies of lattice mismatch and threading dislocations in GaAs/Si grown by MBE

(1¯11) diffraction peak and optical transmittance above 70%. As the annealing time was increased, the grain size increased and the optical band gap decreased.