Yuttapoom Puttisong

High Open-Circuit Voltages in Tin-Rich Low-Bandgap Perovskite-Based Planar Heterojunction Photovoltaics

Low-bandgap CH3 NH3 (Pbx Sn1-x )I3 (0 ≤ x ≤ 1) hybrid perovskites (e.g., ≈1.5-1.1 eV) demonstrating high surface coverage and superior optoelectronic properties are fabricated. State-of-the-art photovoltaic (PV) performance is reported with power conversion efficiencies approaching 10% in planar heterojunction architecture with small (<450 meV) energy loss compared to the bandgap and high (>100 cm2 V-1 s-1 ) intrinsic carrier mobilities.

Dominant recombination centers in Ga(In)NAs alloys: Ga interstitials

Optically detected magnetic resonance measurements are carried out to study formation of Ga interstitial-related defects in Ga(In)NAs alloys. The defects, which are among dominant nonradiative recombination centers that control carrier lifetime in Ga(In)NAs, are unambiguously proven to be common grown-in defects in these alloys independent of the employed growth methods. The defects formation is suggested to become thermodynamically favorable because of the presence of nitrogen, possibly due to local strain compensation.

Efficient room-temperature nuclear spin hyperpolarization of a defect atom in a semiconductor

Nuclear spin hyperpolarization is essential to future solid-state quantum computation using nuclear spin qubits and in highly sensitive magnetic resonance imaging. Though efficient dynamic nuclear polarization in semiconductors has been demonstrated at low temperatures for decades, its realization at room temperature is largely lacking. Here we demonstrate that a combined effect of efficient spin-dependent recombination and hyperfine coupling can facilitate strong dynamic nuclear polarization of a defect atom in a semiconductor at room temperature. We provide direct evidence that a sizeable nuclear field (~150 Gauss) and nuclear spin polarization (~15%) sensed by conduction electrons in GaNAs originates from dynamic nuclear polarization of a Ga interstitial defect. We further show that the dynamic nuclear polarization process is remarkably fast and is completed in <5 μs at room temperature. The proposed new concept could pave a way to overcome a major obstacle in achieving strong dynamic nuclear polarization at room temperature, desirable for practical device applications.

Room‐Temperature Electron Spin Amplifier Based on Ga(In)NAs Alloys

The first experimental demonstration of a spin amplifier at room temperature is presented. An efficient, defect-enabled spin amplifier based on a non-magnetic semiconductor, Ga(In)NAs, is proposed and demonstrated, with a large spin gain (up to 2700% at zero field) for conduction electrons and a high cut-off frequency of up to 1 GHz.

Electron spin filtering by thin GaNAs/GaAs multiquantum wells

Effectiveness of the recently discovered defect-engineered spin-filtering effect is closely examined in GaNAs/GaAs multiquantum wells (QWs) as a function of QW width. In spite of narrow well widths of 3–9 nm, rather efficient spin filtering is achieved at room temperature. It leads to electron spin polarization larger than 18% and an increase in photoluminescence intensity by 65% in the 9 nm wide QWs. A weaker spin filtering effect is observed in the narrower QWs, mainly due to a reduced sheet concentration of spin-filtering defects (e.g., Gai interstitial defects).

Anomalous spectral dependence of optical polarization and its impact on spin detection in InGaAs/GaAs quantum dots

We show that circularly polarized emission light from InGaAs/GaAs quantum dot (QD) ensembles under optical spin injection from an adjacent GaAs layer can switch its helicity depending on emission wavelengths and optical excitation density. We attribute this anomalous behavior to simultaneous contributions from both positive and negative trions and a lower number of photo-excited holes than electrons being injected into the QDs due to trapping of holes at ionized acceptors and a lower hole mobility. Our results call for caution in reading out electron spin polarization by optical polarization of the QD ensembles and also provide a guideline in improving efficiency of spin light emitting devices that utilize QDs.

Room temperature spin filtering effect in GaNAs: Role of hydrogen

Effects of hydrogen on the recently discovered defect-engineered spin filtering in GaNAs are investigated by optical spin orientation and optically detected magnetic resonance. Post-growth hydrogen treatments are shown to lead to nearly complete quenching of the room-temperature spin-filtering effect in both GaNAs epilayers and GaNAs/GaAs multiple quantum wells, accompanied by a reduction in concentrations of Gai interstitial defects. Our finding provides strong evidence for efficient hydrogen passivation of these spin-filtering defects, likely via formation of complexes between Gai defects and hydrogen, as being responsible for the observed strong suppression of the spin-filtering effect after the hydrogen treatments.

A Chemically Doped Naphthalenediimide‐Bithiazole Polymer for n‐Type Organic Thermoelectrics

The synthesis of a novel naphthalenediimide (NDI)-bithiazole (Tz2)-based polymer [P(NDI2OD-Tz2)] is reported, and structural, thin-film morphological, as well as charge transport and thermoelectric properties are compared to the parent and widely investigated NDI-bithiophene (T2) polymer [P(NDI2OD-T2)]. Since the steric repulsions in Tz2 are far lower than in T2, P(NDI2OD-Tz2) exhibits a more planar and rigid backbone, enhancing π-π chain stacking and intermolecular interactions. In addition, the electron-deficient nature of Tz2 enhances the polymer electron affinity, thus reducing the polymer donor-acceptor character. When n-doped with amines, P(NDI2OD-Tz2) achieves electrical conductivity (≈0.1 S cm-1 ) and a power factor (1.5 µW m-1 K-2 ) far greater than those of P(NDI2OD-T2) (0.003 S cm-1 and 0.012 µW m-1 K-2 , respectively). These results demonstrate that planarized NDI-based polymers with reduced donor-acceptor character can achieve substantial electrical conductivity and thermoelectric response.

Size dependence of electron spin dephasing in InGaAs quantum dots

We investigate ensemble electron spin dephasing in self-assembled InGaAs/GaAs quantum dots (QDs) of different lateral sizes by employing optical Hanle measurements. Using low excitation power, we are able to obtain a spin dephasing time T2* (in the order of ns) of the resident electron after recombination of negative trions in the QDs. We show that T2* is determined by the hyperfine field arising from the frozen fluctuation of nuclear spins, which scales with the size of QDs following the Merkulov-Efros-Rosen model. This scaling no longer holds in large QDs, most likely due to a breakdown in the lateral electron confinement.

Exciton Fine-Structure Splitting in Self-Assembled Lateral InAs/GaAs Quantum-Dot Molecular Structures

Fine-structure splitting (FSS) of excitons in semiconductor nanostructures is a key parameter that has significant implications in photon entanglement and polarization conversion between electron spins and photons, relevant to quantum information technology and spintronics. Here, we investigate exciton FSS in self-organized lateral InAs/GaAs quantum-dot molecular structures (QMSs) including laterally aligned double quantum dots (DQDs), quantum-dot clusters (QCs), and quantum rings (QRs), by employing polarization-resolved microphotoluminescence (μPL) spectroscopy. We find a clear trend in FSS between the studied QMSs depending on their geometric arrangements, from a large FSS in the DQDs to a smaller FSS in the QCs and QRs. This trend is accompanied by a corresponding difference in the optical polarization directions of the excitons between these QMSs, namely, the bright-exciton lines are linearly polarized preferably along or perpendicular to the [11̅0] crystallographic axis in the DQDs that also defines the alignment direction of the two constituting QDs, whereas in the QCs and QRs, the polarization directions are randomly oriented. We attribute the observed trend in the FSS to a significant reduction of the asymmetry in the lateral confinement potential of the excitons in the QRs and QCs as compared with the DQDs, as a result of a compensation between the effects of lateral shape anisotropy and piezoelectric field. Our work demonstrates that FSS strongly depends on the geometric arrangements of the QMSs, which effectively tune the degree of the compensation effects and are capable of reducing FSS even in a strained QD system to a limit similar to strain-free QDs. This approach provides a pathway in obtaining high-symmetry quantum emitters desirable for realizing photon entanglement and spintronic devices based on such nanostructures, utilizing an uninterrupted epitaxial growth procedure without special requirements for lattice-matched materials combinations, specific substrate orientations, and nanolithography.