Yuya Ohishi

Fabrication and characterization of perovskite-based CH3NH3Pb1-xGexI3, CH3NH3Pb1-xTlxI3 and CH3NH3Pb1-xInxI3 photovoltaic devices

Perovskite-type CH3NH3PbI3-based photovoltaic devices were fabricated and characterized. Doping effects of thallium (Tl), indium (In), or germanium (Ge) element on the photovoltaic properties and surface structures of the perovskite phase were investigated. The open circuit voltage increased by Ge addition, and fill factors were improved by adding a small amount of Ge, Tl or In. In addition, the wavelength range of incident photon conversion efficiencies was expanded by the Tl addition.

Effects of SbBr3 addition to CH3NH3PbI3 solar cells

TiO2/CH3NH3Pb1-xSbxI3-2xBr3x−based photovoltaic devices were fabricated, and effects of SbBr3 addition to CH3NH3PbI3 precursor solutions on the photovoltaic properties were investigated. The short-circuit current densities and photoconversion efficiencies were improved by adding a small amount of SbBr3 to the perovskite phase, which would be due to a doping effect of Sb or Br atoms at the Pb or I sites.

Construction and evaluation of photovoltaic power generation and power storage system using SiC field-effect transistor inverter

A power storage system using spherical silicon (Si) solar cells, maximum power point tracking charge controller, lithium-ion battery and a direct current-alternating current (DC-AC) inverter was constructed. Performance evaluation of the DC-AC inverter was carried out, and the DC-AC conversion efficiencies of the SiC field-effect transistor (FET) inverter was improved compared with those of the ordinary Si-FET based inverter.

Fabrication and characterization of CH3NH3(Cs)Pb(Sn)I3(Br) perovskite solar cells

Perovskite-type CH3NH3(MA)PbI3−based photovoltaic devices were fabricated and characterized. Doping effects of cesium iodide (CsI), cesium bromide (CsBr) and tin bromide (SnBr2) on the photovoltaic properties and surface microstructures of the perovskite phase were investigated. Short-circuit current densities, open-circuit voltages and fill factors increased by CsI and SnBr2 addition. The surface coverage of the perovskite crystals was also improved by SnBr2 doping, which resulted in improvement of the fill factor. The cell prepared by a starting composition of MA0.95Cs0.05Pb0.95Sn0.05I2.90Br0.10 showed the best photovoltaic performance in the present work.

Highly (100)-oriented CH3NH3PbI3(Cl) perovskite solar cells prepared with NH4Cl using an air blow method

The effects of adding NH4Cl via an air blow process on CH3NH3PbI3(Cl) perovskite solar cells were investigated. CH3NH3PbI3(Cl) solar cells containing various amounts of NH4Cl were fabricated by spin-coating. The microstructures of the resulting cells were investigated by X-ray diffraction, optical microscopy, and scanning electron microscopy. The current density–voltage characteristics of the cell were improved by adding an appropriate amount of NH4Cl and air blowing, which increased the photoconversion efficiency to 14%. Microstructure analysis indicated that the perovskite layer contained dense grains with strong (100) orientation, as a result of NH4Cl addition and air blowing. The ratio of the (100)/(210) reflection intensities for the perovskite crystals was 2000 times higher than that of randomly oriented grains. The devices were stable when stored in ambient air for two weeks.

Effects of CuBr addition to CH3NH3PbI3(Cl) perovskite photovoltaic devices

Effects of CuBr addition to perovskite CH3NH3PbI3(Cl) precursor solutions on photovoltaic properties were investigated. The CH3NH3Pb(Cu)I3(Cl,Br)-based photovoltaic devices were fabricated by a spin-coating technique, and the microstructures of the devices were investigated by X-ray diffraction, optical microscopy and scanning electron microscopy. Current density-voltage characteristics were improved by a small amount of CuBr addition, which resulted in improvement of the conversion efficiencies of the devices. The structure analysis showed decrease of unit cell volume and increase of Cu/Br composition by the CuBr addition, which would indicate the Cu/Br substitution at the Pb/I sites in the perovskite crystal, respectively.Effects of CuBr addition to perovskite CH3NH3PbI3(Cl) precursor solutions on photovoltaic properties were investigated. The CH3NH3Pb(Cu)I3(Cl,Br)-based photovoltaic devices were fabricated by a spin-coating technique, and the microstructures of the devices were investigated by X-ray diffraction, optical microscopy and scanning electron microscopy. Current density-voltage characteristics were improved by a small amount of CuBr addition, which resulted in improvement of the conversion efficiencies of the devices. The structure analysis showed decrease of unit cell volume and increase of Cu/Br composition by the CuBr addition, which would indicate the Cu/Br substitution at the Pb/I sites in the perovskite crystal, respectively.

Fabrication and characterization of perovskite-based CH3NH3Pb1-xAsxI3+xCly photovoltaic devices

Effects of AsI3 and NH4Cl addition to perovskite CH3NH3PbI3 precursor solutions on photovoltaic properties were investigated. TiO2/CH3NH3Pb(As)I3(Cl)-based photovoltaic devices were fabricated by a spin-coating technique, and the microstructures of the devices were investigated by X-ray diffraction and scanning electron microscopy. Current density-voltage characteristics and incident photon-to-current conversion efficiencies were improved by a small amount of As- and Cl-doping, which resulted in improvement of the efficiencies of the devices.

Fabrication and Characterization of Element-Doped Perovskite Solar Cells

Perovskite solar cells were fabricated and characterized. X-ray diffraction analysis and transmission electron microscopy were used for investigation of the devices. The structure analysis by them showed structural transformation of the crystal structure of the perovskite, which indicated that a cubic-tetragonal crystal system depended on the annealing condition. The photovoltaic properties of the cells also depended on the structures. Metal doping and halogen doping to the perovskite and TiO2 were also investigated. The results showed an increase in the efficiencies of the devices, due to the structural change of the perovskite compound layers.

Rietveld refinement of the crystal structure of perovskite solar cells using CH3NH3PbI3 and other compounds

The crystal structures of perovskite thin films including CH3NH3PbI3, CH3NH3Pb1-xSbxI3, and CH3NH3PbI3-yCly in the solar cell configuration were studied by using Rietveld refinement. For the CH3NH3PbI3 and CH3NH3Pb1-xSbxI3 samples, satisfactory agreement with the measured profiles was obtained with a weighted profile R−factor (Rwp) of as low as 3%. It was shown that the site occupancy of methylammonium (MA) was decreased in the antimonized cell due to the compensation effect of an increased positive charge brought about by replacing Pb2+ with Sb3+. Photovoltaic measurements showed that the power conversion efficiency was enhanced by adding a small amount of Sb to the CH3NH3PbI3 cell, but it was monotonically decreased as the mole fraction of Sb exceeded 0.03. This variation of the conversion efficiency was considered as a result of suppressed crystallization of PbI2 and carrier recombination via MA vacancies in the antimonized cells. In the case of CH3NH3PbI2.88Cl0.12 sample, the agreement with the measur...

Effects of CsBr addition on the performance of CH3NH3PbI3-xClx-based solar cells

Perovskite-type photovoltaic devices were prepared by a spin-coating method using a precursor solution of CH3NH3I and lead(II) chloride in N,N-dimethylformamide. Effects of cesium bromide (CsBr) addition on the photovoltaic properties and microstructures of the perovskite phase were investigated. The fill factor was increased by adding the CsBr to the CH3NH3PbI3-xClx precursor solution, which resulted in increase of the conversion efficiency. The crystallinity of the CH3NH3PbI3-xClx perovskite phase was also improved by adding the CsBr to the H3NH3PbI3-xClx precursor solution.Perovskite-type photovoltaic devices were prepared by a spin-coating method using a precursor solution of CH3NH3I and lead(II) chloride in N,N-dimethylformamide. Effects of cesium bromide (CsBr) addition on the photovoltaic properties and microstructures of the perovskite phase were investigated. The fill factor was increased by adding the CsBr to the CH3NH3PbI3-xClx precursor solution, which resulted in increase of the conversion efficiency. The crystallinity of the CH3NH3PbI3-xClx perovskite phase was also improved by adding the CsBr to the H3NH3PbI3-xClx precursor solution.