Yves Scudeller

A model reduction approach for constructing compact dynamic thermal models of IGBT-modules of inverters

This paper presents a model reduction approach for constructing lumped RC thermal networks of IGBT-modules of inverters for which heat and subsequent temperature increases vary with time on different scales ranging from nanosecond to second. It was observed that the time-dependent heat and temperature profiles of transistors and diodes of IGBT-modules of inverters oscillate at two frequencies, one in the range 0.1-50Hz corresponding to the load current modulation, and the other in the range 1-20kHz corresponding to the switching frequency. The reduction approach consisted of decomposing the module into different elements, each being described with a number of RC cells selected according to the time-constant of the element with regard to the module. The lumped RC thermal networks were found in good agreement with the continuous model by offering a considerably lower computational time on the different time scales. For simplicity, the reduction approach is presented for one-dimensional heat flow through the cross-plane direction of the module.

Electro-thermal investigations on silicon inverters operating at low frequency

This paper presents methods for determining power loss profiles of Si-IGBT-based inverters and the induced junction temperature. Power losses were decomposed into different waveforms in order to investigate their influence on the junction temperature of the IGBT. Junction temperature has been determined by a dynamic thermal model using the transmission matrix technique.